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采用旋涂的方法在基底材料表面原位生长BiOX(X=C1、Br、I)薄膜材料.样品的晶体结构和光学性质等通过X射线粉末衍射(XRD)、透射电子显微镜(TEM)、紫外可见漫反射光谱(UV-Vis)进行了表征.结果表明旋涂法制备的BiOX薄膜是纯净的,无其他杂质,均匀性好.通过对BiOX薄膜材料的光催化性能和瞬态表面光电压技术(TPV)进行了研究,发现卤素掺杂的BiOBr0.48I052具有较好的光催化性能.其结果表明催化性能提高的原因可能是BiOBr0.48I0.52薄膜在光照下可以产生更强的光生载流子并具有更长的光生载流子寿命. 相似文献
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以4'-(4-甲苯基)-2,2'∶6',2″-三联吡啶为电子受体(A)基元, 通过Wittig反应引入电子给体(D)基元, 合成了2个新的D-π-A型三联吡啶衍生物; 研究了其单、 双光子吸收荧光特性, 并通过量子化学计算从结构角度进行了解释. 目标产物的荧光量子产率(Ф)最高达到0.45, 双光子吸收截面(δ2)最大达406 GM. 相似文献
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The phase transitions among the high-pressure polymorphic forms of CaCO3 (cc-I, cc-II, cc-III, and cc-IIIb) are investigated by dynamic diamond anvil cell (dDAC) and in situ Raman spectroscopy. Experiments are carried out at room temperature and high pressures up to 12.8 GPa with the pressurizing rate varying from 0.006 GPa/s to 0.056 GPa/s. In situ observation shows that with the increase of pressure, calcite transforms from cc-I to cc-II at ~ 1.5 GPa and from cc-II to cc-III at ~ 2.5 GPa, and transitions are independent of the pressurizing rate. Further, as the pressure continues to increase, the cc-IIIb begins to appear and coexists with cc-III within a pressure range that is inversely proportional to the pressurizing rate. At the pressurizing rates of 0.006, 0.012, 0.021, and 0.056 GPa/s, the coexistence pressure ranges of cc-III and cc-IIIb are 2.8 GPa-9.8 GPa, 3.1 GPa-6.9 GPa, 2.7 GPa-6.0 GPa, and 2.8 GPa-4.5 GPa, respectively. The dependence of the coexistence on the pressurizing rate may result from the influence of pressurizing rate on the activation process of transition by reducing the energy barrier. The higher the pressurizing rate, the lower the energy barrier is, and the easier it is to pull the system out of the coexistence state. The results of this in situ study provide new insights into the understanding of the phase transition of calcite. 相似文献
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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect 下载免费PDF全文
A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX). At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device. 相似文献
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以2,2'∶6',2″-三联吡啶为电子受体(Acceptor,A)基元,通过Wittig成烯反应引入N-己基-3-甲酰基咔唑电子给体(Donor,D)基元,合成了一种D-π-A型三联吡啶衍生物,对其进行了质谱、核磁共振波谱、红外光谱及X射线单晶结构分析.光学性质研究结果表明,目标产物具有单、双光子吸收和荧光特性,荧光量子产率(Ф)高达0.46,最大双光子吸收截面(δ)为120 GM. 相似文献
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用HF酸刻蚀熔石英元件,研究刻蚀对元件后表面划痕的形貌结构及损伤性能的影响,探索损伤阈值提升的原因.时域有限差分算法理论计算结果表明:对于含有50nm直径氧化锆颗粒的划痕,对入射光调制引发场增强的最大值是入射光强的6.1倍,且最强点位于划痕内部氧化锆颗粒附近,而结构相同但不含杂质的划痕引发的最大场增强为入射光强的3.6倍,最强区位于划痕外围;HF酸刻蚀能够有效去除划痕中的杂质,改变划痕结构,增加其宽深比值,经刻蚀的划痕对入射光调制引发场增强降低到入射光强的2.2倍.实验结果表明,经过深度刻蚀的划痕初始损伤阈值较刻蚀之前提高一倍多;光热弱吸收测试仪测试刻蚀后划痕对1 064nm激光的吸收最大值仅为230ppm.HF酸刻蚀同时可以提升元件整体损伤阈值,由于元件上无缺陷区域损伤阈值随刻蚀的深入先增加后降低,因此HF酸刻蚀应进行到元件损伤阈值提升到最大值为止. 相似文献