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硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>104 cm-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS2/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2 μm,最佳掺杂浓度为1.0×1015 cm-3;同时高斯缺陷态浓度超过1.0×1015 cm-3时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×1019 cm-3·eV-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×1012 cm-2时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm2。由此可知,MoS2/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。 相似文献
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Electromagnetic Bloch oscillation in one-dimensional multiple microcavities composed of metamaterials
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We propose a photonic structure stacked sequentially by one-dimensional photonic crystals and cavities. The whole structure is composed of single-negative and double-negative materials. The optical Wannier-Stark ladder (WSL) can be obtained in a low frequency region by modulating the widths of the cavities in order. We simulate the dynamical behavior of the electromagnetic wave passing through the proposed photonic structure. Due to the dispersive characteristics of the metamaterials, a very narrow WSL can be obtained. The long-period electromagnetic Bloch oscillation is demonstrated theoretically to have a period on a microsecond time scale. 相似文献
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本文将石墨烯引入到常规光子晶体中构建一种新型光子晶体, 首次从理论上严格导出了决定其能带结构的色散关系, 由于色散关系中石墨烯电导率的存在导致了它具有与常规光子晶体有所不同的特殊光学性质, 我们发现, 随着费米能增大, 低频段能带迅速向高频移动, 而高频段能带移动缓慢, 导致了常规光子晶体没有的能带压缩现象的发生, 究其原因在于石墨烯在低频段电导率迅速变化, 而高频段电导率变化缓慢, 导致能带向高频压缩, 使得光波原先允许频率变成禁止传播, 而禁止频率变成允许传播. 相似文献
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Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
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The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic(IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors. 相似文献
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用传输矩阵方法研究了由两种单负材料构成的光子晶体异质结构的透射特性.结果表明,当异质结构具有零有效折射率时,由于迅衰场表面模共振耦合,在异质结构双周期光子晶体的每一个分界面上都会出现隧穿模.零有效折射率隧穿模不受入射角、电磁波偏振态、结构周期数和晶格常数标度等因素影响,并且具有零相位延迟,这一特性可用来设计零相位延迟全向多通道滤波器件.而位于中心两侧的隧穿模随入射角、结构周期数和晶格常数标度的减小都统一由中心向两侧移动.
关键词:
单负材料
异质结构
传输矩阵 相似文献
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β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study
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Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a- Si, μ-Si, and/3-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si//3-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency. 相似文献
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A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic(IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters(short-circuit current density, opencircuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10-20cm~2, the conversion efficiencyη of the IPV cell always has a negative gain(?η 0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small(large) hole photoemission cross section and large(small) electron photoemission cross section,whose energy levels are near the valence(or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections. 相似文献
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多元硫化物Cd0.5Zn0.5S和氧化亚铜Cu2O载流子迁移率较大,且其制作工艺相对于传统的电子传输层和空穴传输层更为简单,因此这两种材料在钙钛矿太阳电池中具有很好的应用潜力。本文利用SCAPS-1D软件对以Cu2O和Cd0.5Zn0.5S为传输层、以铅基卤化物钙钛矿为吸收层的太阳电池进行模拟,主要研究了该器件的材料厚度、掺杂浓度、禁带宽度等因素对太阳电池性能的影响。结果表明:当光吸收层(CH3NH3PbI3)厚度开始增大时电池性能逐渐提高,但是增大到一定厚度时,电池性能下降,光吸收层的最佳厚度为400 nm;当光吸收层的缺陷态密度小于1.0×1014 cm-3时,缺陷态密度对电池性能的影响比较小;此外,铅基卤化物钙钛矿的禁带宽度对电池性能有重要影响,最佳禁带宽度为1.5 eV左右。通过模拟,得到了优化后的性能参数为:开路电压为1.010 V,短路电流密度为31.30 mA/cm2,填充因子为80.01%,电池转换效率为25.20%。因此,Cu2O/CH3 NH3PbI3/Cd0.5Zn0.5S钙钛矿太阳电池是一种很有发展潜力的光伏器件。 相似文献
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