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首次在室温下测定了^1^7^1Yb在YbCl~2中的化学位移、化学位移各向异性、自旋-晶格弛豫时间、自旋-晶格弛豫时间的各向异性,计算出自旋-自旋弛豫时间。根据TMS(^1H)的绝对屏蔽常数,计算了^1^7^1Yb在YbCl~2和在AYbI~3(A=K,Rb,Cs)中的平均绝对屏蔽常数(σ~i~s~o),逆磁绝对屏蔽常数(σ~i~s~o^d)和顺磁绝对屏蔽常数(-σ~i~s~o^p),并且对^1^7^1Yb的各项屏蔽常数与结构之间的关系进行了讨论。 相似文献
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化合物Al2Mo3-xWxO12的合成与结构 总被引:1,自引:0,他引:1
赵新华 《高等学校化学学报》1999,20(3):339-343
合成并表征了一系列化合物Al2Mo3-xWxO12 x=0,0.5,1.0,1.5和2.0的化合物是以单斜晶系Al2(MoO4)3为基质的化合物和固溶体,空间群为P21/a;x=2.5和3.0的标题化合物是以正交晶系Al2(WO4)3为基质的固溶体和化合物,空间群为Pbcn.利用粉末X射线衍射图谱全谱拟合的方法精修了x=0,0.5,1.0,1.5,2.0的标题化合物的结构,讨论其相变机理. 相似文献
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Enhanced thermoelectric performance through homogenously dispersed MnTe nanoparticles in p-type Bi_(0.52)Sb_(1.48)Te_3 nanocomposites 下载免费PDF全文
In this work,we report that the thermoelectric properties of Bi_(0.52)Sb_(1.48)Te_3alloy can be enhanced by being composited with Mn Te nano particles(NPs)through a combined ball milling and spark plasma sintering(SPS)process.The addition of Mn Te into the host can synergistically reduce the lattice thermal conductivity by increasing the interface phononscattering between Bi_(0.52)Sb_(1.48)Te_3 and MnTe NPs,and enhance the electrical transport properties by optimizing the hole concentration through partial Mn~(2+)acceptor doping on the Bi~(3+)sites of the host lattice.It is observed that the lattice thermal conductivity decreases with increasing the percentage of Mn Te and milling time in a temperature range from 300 Kto 500 K,which is consistent with the increasing of interfaces.Meanwhile,the bipolar effect is constrained to high temperatures,which results in the figure of merit z T peak shifting toward higher temperature and broadening the z T curves.The engineering z T is obtained to be 20%higher than that of the pristine sample for the 2-mol%Mn Te-added composite at a temperature gradient of 200 K when the cold end temperature is set to be 300 K.This result indicates that the thermoelectric performance of Bi_(0.52)Sb_(1.48)Te_3 can be considerably enhanced by being composited with Mn Te NPs. 相似文献
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Improved thermoelectric performance in p-type Bi_(0.48)Sb_(1.52)Te_3 bulk material by adding MnSb_2Se_4 下载免费PDF全文
Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications. 相似文献
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分别利用微乳液水热法和酸蒸气水热法合成了杂多蓝化合物 Zr W 1 .7W 0 .3O7H0 .3( OH) 2 · 2 H2 O.XRD测定结果表明 ,该化合物与 Zr Mo2 O7( OH) 2 · 2 H2 O具有相同晶体结构类型 .使用 Rietveld方法对产物进行了结构精修 ,并计算出了键参数和键价 .运用 EPR技术测定了该化合物中 W的价态 ,并利用 XPS能谱测定了 W /W 的比例 .利用价键和规则 ,指出 Zr W 1 .7W 0 .3O7H0 .3( OH) 2 · 2 H2 O中的 W— O3— H0 .1 5存在羟基化现象 ,并对杂多蓝化合物的红外吸收光谱进行了指认 . 相似文献
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Mg3(Sb,Bi)2基热电材料由于其优异的热电性能和较低的成本近来受到广泛的关注.本研究通过将纳米SiO2复合进成分为Mg3.275Mn0.025Sb1.49Bi0.5Te0.01的基体相中,考察其热电输运性能的变化及机制.结果表明,当SiO2复合进Mg3Sb2基材料中时,由于引进大量的微小晶界,能有效地散射声子,促使晶格热导率降低,优化热输运性能,如SiO2体积含量为0.54%时,室温时热导率由复合前的1.24 W/(m·K)降至1.04 W/(m·K),降幅达到15%;同时其对电子也产生强烈的散射作用,导致迁移率和电导率大幅下滑,结果表现为近室温区功率因子剧烈衰减,恶化了电输运性能.电性能相对于热性能较大降低幅度使得材料在整个测试温区的热电优值没有得到改善.纳米SiO2作为Mg3Sb2 相似文献