离子液体在导电高分子中的应用

综述了离子液体作为介质，在导电高分子合成及其电化学性能测试，以及导电高分子电化学器件中（电化学电容、发光电化学池、驱动器、太阳能电池）的最新研究进展。在此基础上。展望了离子液体在导电高分子中的应用前景。     

软化学法低温合成银纳米线及其生长机制

以AgNO_3为起始物，采用DMF为溶剂和还原剂，无须采用晶种，在低温下 AgNO_3经DMF还原，通过软化学法合成了结构均匀的银纳米线，其直径为15-30nm， 长度高达20μm。通过引入乙酰丙酮，控制钛酸丁酯水解形成的多孔氧化物溶胶为 网络孔道结构，这种孔道结构为银纳米线的控制合成提供了有效的生长模板。     

Optical Properties and Structure Analyses of Zinc Sulfide Nanorods

ZnS nanorods were synthesized using solvothermal process with ethylenediamine as a bidentate ligand to form Zn^2 complexes and dodecylthiol providing an effective control over the crystal growth of ZnS nanorod. The microstructure of the nanorods was characterized by x-ray diffraction and transmission-electron microscopy. The optical properties of ZnS nanorods were examined by the photoluminescence spectrum.     

掺Sn的Ge2Sb2Te5相变存储薄膜的光学性质

提高存储密度和存取速率一直是光存储发展的方向。这对目前用于可擦重写存储的相变材料提出了越来越多的要求：它们既要对短波长有足够的响应,同时其相变速度也越快越好。因此,相变材料性能的改进十分重要,掺杂是提高相变材料性能的重要手段之一。用直流溅射法制备了掺杂不同量Sn的Ge2Sb2Te5相变薄膜,由热处理前后薄膜的X射线衍射（XRD）发现：薄膜发生了从非晶态到晶态的相变。研究了薄膜在250—900nm区域的反射光谱和透射光谱。结果表明：适当的Sn掺杂能大大增加热处理前后材料在短波长（300—405nm）的反射率衬比度,可见,通过Sn掺杂改良相变材料的短波长光存储性能是一种有效的途径。     

Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media.