Si-H, P-H 和 S-H 键离解能Alfa取代基效应研究

CBS-Q and G3 methods were used to generate a large number of reliable Si--H, P---H and S--H bond dissociation energies （BDEs） for the first time. It was found that the Si--H BDE displayed dramatically different substituent effects compared with the C--H BDE. On the other hand, the P---H and S--H BDE exhibited patterns of substituent effects similar to those of the N--H and O--H BDE. Further analysis indicated that increasing the positive charge on Si of XSiH3 would strengthen the Si--H bond whereas increasing the positive charge on P and S of XPH2 and XSH would weaken the P---H and S--H bonds. Meanwhile, increasing the positive charge on Si of XSiH2^＋ stabilized the silyl radical whereas increasing the positive charge on P and S in XPH＂ and XS＊ destabilized P- and S-centered radicals. These behaviors could be reasonalized by the fact that Si is less electronegative than H while P and S are not. Finally, it was demonstrated that the spin-delocalization effect was valid for the Si-, P- and S-centered radicals.