Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

The effects of GaN/InGaN asymmetric lower waveguide (LWG) layers on photoelectrical properties of InGaN multiple quantum well laser diodes (LDs) with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer (InGaN-IL) between the GaN lower waveguide layer and the quantum wells, which is achieved with the Crosslight Device Simulation Software (PIC3D, Crosslight Software Inc.). The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4%, respectively. The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content, and the highest output power is achieved to be 1.25 times that of the reference structure (symmetric GaN waveguide), which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells. Furthermore, when the thickness and indium content of InGaN-IL both reach a higher level, the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor (OCF) related to the concentrated optical field in the lower waveguide.     

走近千年文物——青铜器

介绍青铜器的组成成分、锈蚀产物与机理、修复与保护现状的最新研究进展,从化学学科的角度研究青铜器,既可以拓展专业视野,又能凸显青铜器在历史研究与艺术审美之外的科学价值,为大众揭开这些千年文物的神秘面纱。     

基于ACC图分析工具的新旧人教版高中化学选修教材插图比较

ACC图作为具有特定功能的教材插图，能够将抽象的知识具体化，是一种极具研究价值的插图。利用已有评价工具，对我国人教版高中化学2007年版选修教材与2020年版选择性必修教材中的ACC图进行特征性对比研究，发现新教材的ACC图不仅在数量上多于旧教材，在技术性、科学性、可理解性上也优于旧教材，说明新教材更加注重ACC图的编排与设计。从对比结论出发，发现新教材中的ACC图在促进认知、图片设计、内容呈现等方面具备完善的空间，并提出了具体建议。同时，在评价过程中，也对该工具的改进提出了反思与建议。