贝壳固硫过程热重研究

利用LCT-2型热天平对贝壳的固硫反应过程进行了实验研究。探讨了贝壳在含SO2模拟烟气气氛下的固硫能力、温度特性及SO2浓度对其钙利用率的影响特性;并利用JXA-840扫描电镜实验观察了贝壳与石灰石微观结构特性的主要差别。结果表明:贝壳具有良好的微观结构特性和固硫反应活性,其最佳固硫反应温度比石灰石高出约100℃,大部分贝壳更适合作900~1000℃温度下的燃煤固硫剂。     

多晶富镉Hg_(1-x)Cd_xTe的电沉积及Hg_(0.09)Cd_(0.91)Te薄膜的光电化学行为

本文研究了在酸性CdSO_4+HTeO_2~+6HgCl_2 电解液中多晶富镉Hg_(1-x),Cd_(?),Te(x>0.5)的电沉积过程,实现了三种离子在同一电位下共沉积的技术。对在钛基底上沉积出的薄膜进行XRD,SEM和EDAX分析,结果表明薄膜为闪锌矿型的多晶结构,分布均匀连续。考察了(1—x)=0.09时多晶薄膜在多硫氧化还原电对液中的光电化学行为,光强为100mW/cm~2时,短路光电流I_(sc)=1.88mA/cm~2,开路光电压V_(oc)=0.25V,填充因子F·F=0.22。由光电化学光谱所确定出的禁带宽度E_g=1.26eV,Mott-schottky曲线给出了电极的平带电位φfb为—1.26V(vs.SCE),从而得到开路光电压V_(oc)可能达到的最大值为0.49V。因此,多晶富镉Hg_(1-x)Cd_xTe薄膜是一种很有潜力的光活性电极材料。     

微细管碳纳米管悬浮液强制对流换热实验研究

测量了水平微细圆管内蒸馏水和不同质量浓度的水基多壁碳纳米管纳米流体在低雷诺数下的强制对流换热特性。实验结果表明,与蒸馏水相比,纳米流体的对流换热系数显著提高,且随质量浓度和管内雷诺数的增大而增大;并且研究了流体管内流动阻力特性,得到的泊肃叶数f·Re值随着雷诺数的变化不明显,但纳米流体的f·Re值要明显小于纯水。     

反对称分子动力学模型中的冻结概念（英文）

给出了反对称分子动力学模型(AMD)计算的50 Me V/nucleon112Sn+112Sn反应的分析结果。该研究是反对称分子动力学模型中统计冻结概念的部分研究结果。利用自洽法结合修正的Fisher模型,提取了发射源的温度和密度分别为T=(6.1±0.2)Me V,ρ/ρ0=0.69±0.03。通过与AMD模型计算的系统在时间演化过程中的最大密度比较,得出碎片发射源的密度远小于系统的最大密度。利用自洽法提取的温度和密度与35 Me V/nucleon的40Ca+40Ca反应系统及40 Me V/nucleon的64Zn+112Sn反应系统所提取的温度和密度非常接近。该结果表明反对称分子动力学模型中,系统在中等质量碎片形成时刻处于统计冻结体积。     

安培环路定理的拓扑学描述

近年来拓扑学在量子力学中得到了广泛的运用.本文将安培环路定理积分式重新表达为一矢量场在轮胎参数面上的第一类陈数积分.数值模拟展示了该积分值为一整数即第一陈数,其代表矢量场的整体性质:当经历连续变换时,矢量场的局部数值发生改变但整体积分值即陈数仍保持不变;若陈数发生改变,则表明矢量场变换的连续性条件发生破坏,矢量场出现奇点.进一步通过高斯映射将该矢量场从参数轮胎面映射到单位球面上,并给出了第一陈数的直观几何意义.理论和数值结果揭示了安培环路定理的拓扑学本质,表明拓扑概念在经典物理学中也会有广泛应用.     

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

三维列联表精确概率检验之探讨

当样本较小时,列联表分析需作精确概率检验.本文着重就三维列联表讨论多维列联表的精确概率检验方法,并讨论了可用观察频数直接算得概率值的条件.     

金属Al表面熔化各向异性的分子动力学模拟

采用嵌入原子势,使用分子动力学方法对金属Al不同低指数晶面的表面熔化现象分别进行了模拟.分析了熔化过程中样品结构组态的变化.模拟结果表明对于不同的自由表面,表面熔化呈现出明显的各向异性行为.Al（110）面在低于熔点的温度之下发生预熔化;（111）与（001）面都出现过热现象.与（111）面不同,（001）面发生过热现象时表面原子层为类液层,而（111）面仍然保持很好的晶格结构,即预熔化的Al（001）面在高于熔点的温度下,仍可以在很长的时间内处于相对稳定的亚稳态.由模拟得到Al的热力学熔点为950 K左右,与实验值基本符合. 关键词： 分子动力学 表面熔化 过热