基于邻苯二酚/聚乙烯亚胺共沉积改性吸附材料的制备及其对Cd2+吸附性能的研究

本文采用一步沉积的方法,通过邻苯二酚(CCh)与聚乙烯亚胺(PEI)交联共沉积的方式对聚丙烯非织造布进行功能化改性,制备了新型的可吸附Cd~(2+)的材料。通过傅里叶红外光谱(FT-IR)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对聚丙烯非织造布改性前后的形态及性能进行表征,并探讨了反应时间、初始浓度、p H值等因素对其吸附Cd~(2+)性能的影响。结果表明,当CCh-PEI的质量比为2:1,反应时间为12h时,改性聚丙烯非织造布表面N元素和O元素的含量达到最大,材料具有稳定的化学结构,最大吸附量达到57mg/g,在进行6次的脱附-吸附后,改性后的聚丙烯非织造布对Cd~(2+)仍然具有良好的吸附效果。     

白光LED的加速老化特性

对两组GaN基白光发光二极管（LED）进行了对比温度加速老化实验,环境温度分别是80,100℃。随着老化温度的升高,电流-电压（I-V）曲线的隧道电流段、扩散电流段以及反向漏电电流均增加,而串联电阻段则变化较小,这是位错密度升高和金属杂质沿着螺旋位错聚集及移动的结果;电容-电压（C-V）曲线中反向偏压下电容减少,正向偏压下电容增大,这是由于螺位错和混合位错产生了漏电的通道;电致发光光谱中黄光荧光成分比重增加;光通量随时间开始缓慢降低,在某一个时刻突然急剧降低,显示各个老化因素累积的影响会在某一时刻导致白光LED突然失效。最后使用阿列纽斯关系计算出所用白光LED的寿命为2．3万小时。     

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements （XRD）. The buildup levels in persistent photoconductivity （PPC） are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.