Ni_2P催化剂的低温还原法合成及其HDS性能

在低还原温度下程序升温还原法制备了Ni2P/MCM-41催化剂,并采用H2-TPR、TG-DTG、XRD、BET、XPS等手段对制备的催化剂进行了表征,考察了还原温度对活性相Ni2P形成以及催化剂二苯并噻吩HDS性能的影响。结果表明,在210~390℃下还原得到的催化剂活性相为单一的Ni2P相;在390℃下还原得到的催化剂具有最高的二苯并噻吩HDS活性,在反应温度340℃、反应压力3.0 MPa、氢/油体积比500、质量空速(WHSV)2.0 h-1的条件下二苯并噻吩HDS转化率达到99.0%。     

Radio-frequency transistors from millimeter-scale graphene domains

Graphene is a new promising candidate for application in radio-frequency(RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently,much progress has been made in the graphene-based RF field-effect transistors(RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm,respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.