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使用金属有机化学气相沉积法生长了AlGN/GaN高电子迁移率晶体管.研究了生长压力和载气组分对AlGaN势垒层及AlGaN高电子迁移率晶体管二维电子气迁移率的影响.原子力显微镜(AFM)光谱和SEM-EDS用于表征外延层的质量.结果表明随着反应室压力从50torr提高到200torr,AlGaN势垒层的表面形貌先变好,随后开始变差.在反应室压力100torr情况下得到最好的表面形貌.同时发现在生长AlGaN势垒层时,同时适当的氢气会提高AlGaN层的质量.在反应室压力100torr、氢气组分59;时得到AlGaNHEMT的最大二维电子气迁移率为1545 cm2/V·s. 相似文献
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A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method.The ohmic electrode of Ti(50nm)/Mo(100nm)/Au(300nm)for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method.Then the device was annealed at 410℃ in air for 1h in order to form ohmic metal alloy,The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 10^5,and the turn-on voltage and the highest current were 7V and 0.36mA,respectively. 相似文献
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Preparation and Transparent Property of the n—ZnO/p—Diamond Heterostructure 总被引:2,自引:0,他引:2 下载免费PDF全文
Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time.The electrodes of the n-and p-type semiconductors are experimentally verified to be ohmic.The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to 2V.The turn-on voltage of the diode is 0.34V and the highest current is about 5.0mA as the forward voltage reaches 2V.Moreover,the diode is optically transparent in the region of 500-700nm wavelength. 相似文献
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文内报告了金刚石薄膜/立方氮化硼异质结的制备过程,然后采用自制的 测试装置对其伏-安特性进行了测试。 相似文献
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光学带隙或禁带宽度是半导体材料的一个重要特征参数.本文以3个具有代表性的InGaN/GaN多量子阱结构作为研究对象,深入探讨了荧光法测定某个目标温度下InGaN阱层的光学带隙所需要满足的测试条件.由于InGaN阱层是一种多元合金且受到来自GaN垒层的应力作用,所以该阱层中不仅存在着杂质/缺陷相关的非辐射中心,也存在着组分起伏诱发的局域势起伏以及极化场诱发的量子限制斯塔克效应.因此,为了获得目标温度下InGaN阱层的较为精确的光学带隙,提出了荧光测量至少应满足的测试条件,即必须消除该目标温度下非辐射中心、局域中心以及量子限制斯塔克效应对辐射过程的影响. 相似文献
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