THzQWP二维光栅耦合效率的理论分析研究

将二维金属光栅结构引入到探测器结构中,以提高太赫兹(THz)量子阱光电探测器的探测率。采用三维时域有限差分算法,建立了THz量子阱光电探测器的二维金属光栅仿真模型,详细分析了二维金属光栅参数对太赫兹量子阱光电探测器的电场强度的影响。仿真分析结果表明:当入射光频率为6.27 THz(相对应波长为47.847 m)、光栅周期P=10.5 m、占空比=0.55（金属块宽度w= 5.755 m）、光栅层厚度h=0.4 m时,器件中的Z方向上的电场值最大,光栅的耦合效率最高。     

采用CCD技术的微型光机电系统光开关测试方法

在研制基于微型光机电系统技术的光电器件过程中,需要精确测定器件在给定驱动条件下的运动情况。在对制作完成的光开关进行性能测试时,由于微型光机电系统光开关的几何尺寸的限制,如果要准确测定光开关微反射镜的运动位移。将会有一定的困难。提出了一种采用线阵CCD技术的光学测量方法,实现了对光开关悬臂梁在驱动电压作用下的旋转角度的精确测量。通过理论推导得到了悬臂梁扭转角度与可测量物理量的关系．通过求解方程得到了各个物理量的数值选择对于测量结果的影响,并且给定了测量时各个物理量的参考值。通过实验测量,误差小于10％,表明这是一种具有实际意义的测量方案。     

近玻尔速度能区高电荷态离子与激光等离子体相互作用实验研究装置

近玻尔速度能区高电荷态离子在稠密等离子体中的能量损失是强流重离子束驱动的高能量密度物理等前沿研究中的核心物理问题之一.基于中国科学院近代物理研究所的320 kV实验平台,新建立了一套近玻尔速度能区离子束与激光等离子体相互作用的实验研究装置,用于开展高精度的离子能量损失和电荷态研究.本文将详细介绍该装置的特点,包括脉冲离子束(≥200 ns)的产生与调控、高密度(10¹⁷—10²¹ cm^–3)激光等离子体靶的制备、等离子体参数诊断与离子的高精度测量(<1%)等.基于该装置已开展了百keV的质子束和4 MeV的Xe¹⁵⁺离子束与激光Al等离子体靶相互作用的实验,并取得了相应的结果.本实验装置能够为中国在近玻尔速度能区高电荷离子与稠密激光等离子体相互作用研究提供高精度的实验数据,以促进理论工作的发展.     

梳状波导结构中石墨烯表面等离子体的传播性质

理论上研究了介质/石墨烯/介质梳状波导结构中表面等离子体的传播性质. 波导中表面等离子体模的有效折射率随着石墨烯费米能级的提高而减小, 随着介质折射率的增加而增加. 分析和仿真结果表明, 基于这种梳状波导可以在中红外波段实现新型的纳米等离子体滤波器, 器件的尺度在几百纳米的范围. 通过改变梳状分支的长度, 石墨烯的费米能级, 介质的折射率和波导中石墨烯的层数, 很容易来调节带隙的位置. 另外, 滤波带隙的宽度随着梳状分支数的增加而增加. 这种滤波性质将在可调的高集成光子滤波器件中具有潜在的应用.     

Electronic structures and edge effects of Ga_2S_2 nanoribbons

Ab initio density functional theory calculations are carried out to predict the electronic properties and relative stability of gallium sulfide nanoribbons(Ga_2S_2-NRs) with either zigzag- or armchair-terminated edges. It is found that the electronic properties of the nanoribbons are very sensitive to the edge structure. The zigzag nanoribbons(Ga_2S_2-ZNRs)are ferromagnetic(FM) metallic with spin-polarized edge states regardless of the H-passivation, whereas the bare armchair ones(Ga_2S_2-ANRs) are semiconducting with an indirect band gap. This band gap exhibits an oscillation behavior as the width increases and finally converges to a constant value. Similar behavior is also found in H-saturated Ga_2S_2-ANRs,although the band gap converges to a larger value. The relative stabilities of the bare ANRs and ZNRs are investigated by calculating their binding energies. It is found that for a similar width the ANRs are more stable than the ZNRs, and both are more stable than some Ga_2S_2 nanoclusters with stable configurations.     

矩形折射率分布长周期光纤光栅特性中耦合精度的分析

采用耦合模理论,针对光纤芯层为矩形折射率分布的长周期光纤光栅,分析不同模式间耦合对计算精度的影响。结果表明:对于一阶低次包层模式,偶次包层模式与光纤芯层基模的耦合常数要远远小于奇次包层模式与光纤芯层基模的耦合常数。因此,在不影响计算精度的情况下,可以采用忽略偶次包层模式的方法来提高计算速度。同时,根据不同的计算波长范围和计算精度的要求,可以选择合适的正弦折射率调制阶数范围来减小计算工作量。     

利用质子能损诊断部分电离等离子体靶中的束缚电子密度

部分电离等离子体是惯性约束聚变燃料及天体等离子体中的重要组成部分,该等离子体的输运及流体力学等性质受到束缚电子的显著影响,然而当前基于光谱学的技术手段难以对其进行高精度诊断.本文基于中国科学院近代物理研究所低能离子束与等离子体相互作用实验平台,精确测量了100 ke V质子束穿过部分电离氢等离子体靶后的能损,该能损是质子同靶区内自由电子与束缚电子碰撞共同作用的结果.利用已有的能损理论模型,结合激光干涉诊断获得的自由电子密度信息,最终得到了部分电离氢等离子体靶中沿离子路径上的束缚电子密度,并给出了该等离子体的离化度参数.该离子束诊断技术具有在线、原位、分辨率高等优势,为解决部分电离等离子体内部束缚电子密度的诊断问题提供了新的途径.     

基于表面等离激元的长波QWIP光栅优化

为了提高长波量子阱红外探测器的灵敏度及探测率,采用表面等离激元效应来提高量子阱红外探测器中二维光栅的耦合效率。利用三维时域有限差分算法,分析表面等离激元作用下,长波量子阱红外探测器中二维金属薄膜光栅参数对入射光的调制作用。计算结果表明,对于8 m的入射光,当光栅周期P=2.8 m,孔直径D=1.4 m,光栅层厚度L=0.04 m时,X Y平面内Z方向电场值最大,光栅的耦合效率最高。     

New transfer matrix method for long-period fiber gratings with coupled multiple cladding modes

A new transfer matrix method for long-period fiber gratings with coupled multiple cladding modes is proposed and numerically characterized. The transmission spectra of uniform and non-uniform longperiod fiber gratings are numerically characterized. The theoretical results excellently agree with the experimental measurements. Compared with commonly used methods,such as using the fourth-order adaptive step size control of the Runge-Kutta algorithm in solving the coupled mode equation,the new transfer matrix method exhibits a faster calculation speed.     

Strain engineering of electronic and magnetic properties of Ga_2S_2 nanoribbons

Using first-principles calculations, we study the tailoring of the electronic and magnetic properties of gallium sulfide nanoribbons(Ga_2S_2NRs) by mechanical strain. Hydrogen-passivated armchair-and zigzag-edged NRs(ANRs and ZNRs)with different widths are investigated. Significant effects in band gap and magnetic properties are found and analyzed. First,the band gaps and their nature of ANRs can be largely tailored by a strain. The band gaps can be markedly reduced, and show an indirect-direct(I-D) transition under a tensile strain. While under an increasing compressive strain, they undergo a series transitions of I-D-I-D. Five strain zones with distinct band structures and their boundaries are identified. In addition,the carrier effective masses of ANRs are also tunable by the strain, showing jumps at the boundaries. Second, the magnetic moments of(ferromagnetic) ZNRs show jumps under an increasing compressive strain due to spin density redistribution,but are unresponsive to tensile strains. The rich tunable properties by stain suggest potential applications of Ga_2S_2 NRs in nanoelectronics and optoelectronics.