磁性Fe3O4纳米粒子的功能化修饰研究进展

Fe₃O₄纳米粒子因其独特的磁学性能和良好的生物相容性,在生物医药、催化剂、环境治理等领域具有良好的应用前景。然而,磁性Fe₃O₄纳米粒子易团聚、在潮湿的空气中易氧化,制约了Fe₃O₄纳米粒子的深度应用。本文结合课题组在磁性Fe₃O₄纳米粒子应用方面的研究成果,综述了磁性Fe₃O₄纳米粒子的功能化修饰,并讨论了磁性Fe₃O₄复合纳米材料发展面临的机遇和挑战。      

DLP型3D打印用巯烯光敏树脂的制备与性能研究

基于DLP(Digital light processing)的3D打印技术因具有成型速度快、分辨率高、可打印复杂形状等优点而备受关注,开发可用于DLP型3D打印且性能优异的光敏树脂已成为研究热点。巯烯光聚合遵循自由基逐步聚合机理,相对于传统的丙烯酸酯链式聚合,巯烯聚合反应速度快、聚合网络均一、固化收缩率低。本文制备了一系列可用于DLP型3D打印的巯烯光敏树脂,探究了巯基单体含量对光敏树脂光聚合动力学、热机械性能、拉伸性能、固化收缩率和打印精度的影响。结果表明,巯基单体的加入会显著提高体系双键转化率,增加聚合网络均一性和断裂伸长率,降低固化收缩率。     

相图计算在BBO晶体生长中的应用

本文基于所计算的部分含BBO晶体的硼酸盐体系,研究了相图计算CALPHAD技术在BBO晶体生长过程中的一些应用.利用计算结果,阐述了BBO晶体生长过程中的助熔剂的选择、成分配料以及提拉法生长过程中等径条件的控制等环节.本工作结合CALPHAD技术为BBO晶体的生长提供了理论支持.最后,讨论了CALPHAD技术在晶体生长领域所具有的优势和潜力.     

一类捕食者具有阶段结构的捕食——被捕食模型的全局性态分析

在假设捕食的受益是减少死亡下,建立了一类捕食种群具有阶段结构的捕食-被捕食模型,分析得到了不存在食饵种群情形下捕食者种群模型和食饵存在时捕食-被捕食模型的平衡点存在性和全局稳定性,并确定了决定模型动力学性态的捕食者种群基本再生数、捕食存在时的食饵种群净增长率以及食饵灭绝与否的捕食率阈值.     

优化金属辅助法腐蚀液组分制备多孔硅

金属辅助化学腐蚀法可以在无外加电路的条件下,在40%HF/30%H2O2/乙醇的混合溶液中完成多孔硅的制备,该方法简单快速。本文研究了金属辅助法腐蚀液体系各组分(HF、H2O2、乙醇)含量对多孔硅表面的SiHx成分和多孔层结构的影响,根据Si-H和Si-O的红外吸收峰强度的变化曲线优化了腐蚀液体系中各组分含量。在腐蚀液各组分体积比为V40%HF∶V30%H2O2∶V乙醇=2∶2∶1和腐蚀时间为4 min的条件下制备了形貌均匀、化学活性(SiHx成分)和多孔结构稳定性较好的多孔硅,并对金属辅助法与阳极蚀刻法制得的两种多孔硅进行比较,结果显示金属辅助法制备的多孔硅的化学活性和稳定性在后续的生物技术应用中具有明显的优越性。     

高场应力及栅应力下AlGaN/GaN HEMT器件退化研究

采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现：应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应 关键词： AlGaN/GaN HEMT器件 表面态(虚栅) 势垒层陷阱 应力     

PMNT热释电陶瓷材料的制备及性能研究

用软化学法合成了驰豫型复合钙钛矿结构铁电PMNT粉体,并将制备好的粉体压制成圆片状后放入硅碳棒炉中,于1150℃下烧结成致密热释电陶瓷材料．然后用x射线粉末衍射对合成材料进行物相分析,并用扫描电镜观察了晶粒形貌特征．结果表明：烧结后的陶瓷具有很好的致密性和热释电性,其中,0．67PMN．0．33PT组分热释电陶瓷的热释电系数为4．5×10^-4C·m^-2．K^-1,探测优值Fd为3．9×10^-5Pa^-1/2。     

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs.     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

伯努利方程教学设计中的若干问题1)

针对流体力学课程中伯努利方程内容的教学设计,分析了伯努利方程演示实验中的常见误解,提供了伯努利方程的不同推导方法,讨论了方程中压强项的物理意义,并将伯努利方程进一步联系拓展,以加深学生的理解认识,建立科学严谨的分析方法。伯努利方程的推导是我们认识该方程最基本的出发点,在运用伯努利方程对演示实验解释时一定要注意伯努利方程的适用条件,且综合考虑流体黏性、卷吸等因素的影响。大多数中文教材和英文教材关于伯努利方程中压强项的物理意义解读不同,由伯努利方程推导过程可知,方程中的压强项具有势能的特性,这一特性仅对流体成立。通过建立伯努利方程与其他知识点的联系,对比了可压缩和不可压缩伯努利方程的形式,加深了学生对伯努利方程的理解认识。