ZnO∶Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO∶A l/p-S i接触,并对其进行C-V和I-V特性的77~350 K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C-V和I-V特性上有很大差别。解释了两种样品的C-V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO∶A l/p-S i异质结的C-V曲线发生畸变。经800℃热退火,ZnO∶A l/p-S i异质结的C-V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO∶A l/p-S i异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

ZnO:Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO：Al／p—Si接触,并对其进行C-V和I-V特性的77～350K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C—V和I-V特性上有很大差别。解释了两种样品的C—V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO：Al／p—Si异质结的C—V曲线发生畸变。经800℃热退火,ZnO：Al／p—Si异质结的C—V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO：Al／p—Si异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

Influences of different oxidants on characteristics of La_2O_3/Al_2O_3 nanolaminates deposited by atomic layer deposition

A comparative study of two kinds of oxidants(H_2O and O_3) with the combination of two metal precursors(TMA and La(~iPrCp)_3) for atomic layer deposition(ALD) La_2O_3/Al_2O_3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La_2O_3/Al_2O_3 nanolaminates are studied. Initial testing results indicate that La_2O_3/Al_2O_3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H_2O-based La_2O_3/Al_2O_3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H_2O-based La_2O_3/Al_2O_3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O_3-based La_2O_3/Al_2O_3 nanolaminates indicate that O_3 is a more appropriate oxidant to deposit La_2O_3/Al_2O_3 nanolaminates for electron devices application.     

ZnO:Al薄膜中本征缺陷对光电效应的影响

在直流溅射法制备ZnO薄膜的过程中,通过合适选取溅射时氧氩的压力比,可以显著提高所得n-ZnO／p-Si异质结的光生短路电流,并且对该异质结的光生开路电压没有明显影响,从而可以用这种方法明显提高其光电转化能力。即使是在已经进行了n型掺杂的ZnO薄膜(这里为ZnO：Al)中,改变溅射时氧氩比对光电效应的影响也很明显。通过实验,已经证实了产生这种现象的原因是溅射时氧氩比的改变导致了ZnO薄膜内部的本征缺陷浓度的改变,使得载流子浓度变化而导致的结果。在氧氩压力比约为1：3时,光电转化效率最高。     

Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La₂O₃ hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H₂O-based atomic layer deposition (ALD) La₂O₃/Al₂O₃ nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H₂O-based ALD La₂O₃/Al₂O₃ nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.     

Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO₂/Al₂O₃ gate stack on germanium (Ge) substrate. The micrometer scale level of HfO₂/Al₂O₃ gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non in-situ ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.     

六角氮化硼(h-BN)对单层硒化铟(InSe)的调制效应及这一新结构的电子性质

采用基于密度泛函理论的第一性原理计算和分析了三种InSe/h-BN异质结的结构和电子性质.研究发现InSe/h-BN异质结具有间接带隙特点,并且价带顶和导带底的贡献均来自于InSe,差分电荷密度表明体系中没有明显的电荷交换.通过体系能带结构,我们发现h-BN层对单层InSe有着明显的调控效应.对比纯粹应变调控下单层的InSe的能带结构,发现h-BN对InSe能带结构的调控效应实际上是由InSe和h-BN之间的相互作用而诱导的晶格应变引起的.我们的研究结果表明,单层InSe沉积或生长在不同h-BN片上可以获得不同的晶格应变,实现对单层InSe能带结构的有效调控.     

样品制备过程中不同冷却速率对Nd1.85Ce0.15CuO4±δ单晶正常态和超导态输运性质的影响

通过原子力显微镜(AFM)对Nd_(1.85)Ce_(0.15)CuO_(4±δ)(NCCO)单晶样品的微结构进行分析,发现样品在制备和热处理过程中存在分解反应Nd2-xCexCuO4→(Nd,Ce)2O3 NdCeO3.5 Cu2O发生的证据,控制样品冷却速率可得到(Nd,Ce)2O3分解物含量不同的单晶样品.ab面电阻率测量结果表明,降低冷却速率可有效减少分解过程的发生、减少有效载流子浓度的降低和减少对Cu2O上Cu2 -Cu2 反铁磁关联的破坏,有利于保持体系结构上的均匀性和稳定性,是制备高品质电子型超导体Nd2-xCexCuO4单晶的关键.     

First-principles study of the structural,electronic, and magnetic properties of double perovskite Sr_2FeReO_6 containing various imperfections

The structural, electronic, and magnetic properties of double perovskite Sr_2FeReO_6 containing eight different imperfections of FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, V_(Fe), V_(Re), VOor V_(Sr) vacancies have been studied by using the first-principles projector augmented wave(PAW) within generalized gradient approximation as well as taking into account the on-site Coulomb repulsive interaction(GGA+U). No obvious structural changes are observed for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, or VSrvacancy defects. However, the six(eight) nearest oxygen neighbors of the vacancy move away from(close to) VFeor V_(Re)(VO) vacancies. The half-metallic(HM) character is maintained for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re4 interchange, V_(Fe),VO or V_(Sr) vacancies, while it vanishes when the Fe1–Re1 interchange or VRevacancy is presented. So the Fe1–Re1 interchange and the VRevacancy defects should be avoided to preserve the HM character of Sr_2FeReO_6 and thus usage in spintronic devices. In the FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges cases, the spin moments of the Fe(Re)cations situated on Re(Fe) antisites are in an antiferromagnetic coupling with those of the Fe(Re) cations on the regular sites. In the V_(Fe), V_(Re), VO, or V_(Sr) vacancies cases, a ferromagnetic coupling is obtained within each cation sublattice,while the two cation sublattices are coupled antiferromagnetically. The total magnetic moments μtot(μB/f.u.) of the imperfect Sr_2FeReO_6 containing eight different defects decrease in the sequence of VSrvacancy(3.50), VRevacancy(3.43),FeReantisite(2.74), VOvacancy(2.64), VFevacancy(2.51), ReFeantisite(2.29), Fe1–Re4 interchange(1.96), Fe1–Re1interchange(1.87), and the mechanisms of the saturation magnetization reduction have been analyzed.     

ZnO薄膜的掺杂及其结型材料的研究进展

ZnO薄膜作为一种多用途的半导体材料，一直受到国内外学术界的广泛关注，尤其是自1997年发现ZnO薄膜的室温紫外光发射以来，ZnO薄膜的制备及其光电子特性的研究成为新的研究热点，几年来，研究进展非常迅速，巳报道了结型电致发光器件和光电探测器件的初步研究结果，文章结合作者的工作，综述了目前国内外对ZnO薄膜的掺杂以及ZnO异质结和同质p-n结制备方面的研究状况。