Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μ, which can be used for mid-wave infrared (MWIR) detection.     

基于联咔唑为骨架的双极主体材料的合成及其在有机电致发光器件中的应用

咔唑类衍生物具有良好的空穴传输性能和较高的三重态能级,在有机电致发光器件中一般用来构建空穴传输材料和主体材料。本文通过在联咔唑的3和6位引入具有电子传输能力的氰基,设计合成了一种以双咔唑二聚体为分子骨架的新型双极性有机电致发光主体材料6,6’-双氰基-9,9’-二苯基-3,3’-联咔唑（BCzDCN）,研究了其发光性能、热稳定性和电化学性质。低温磷光发射光谱测试表明BCzDCN的三重态能级高于传统的天蓝色磷光掺杂材料双（4,6-二氟苯基吡啶-N,C²’）吡啶甲酰合铱（FIrpic）。以BCzDCN为主体材料,FIrpic和双（4-苯并噻吩）[3,2-C]吡啶-N,C²’）乙酰丙酮合铱（PO-01）分别为蓝色和黄色磷光掺杂材料,制备了蓝色和白色有机磷光发光二极管器件。器件的最大电流效率分别达到34.6 cd/A和59.0 cd/A。并且在1000 cd/m²亮度下的效率滚降仅有4.1%和5.1%。