排序方式: 共有27条查询结果,搜索用时 78 毫秒
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利用能量为2.0GeV的136Xe和2.7GeV的238U离子对C60薄膜进行了辐照,并用傅立叶变换红外光谱、X射线衍射谱和拉曼散射技术分析了辐照过的C60样品,在傅立叶变换红外光谱上,首次观察到一个位于670cm-1处的,表征未知结构的新峰,研究了其强度随电子能损和辐照剂量的变化规律.分析结果表明,电子能量转移主导了C60薄膜的损伤过程;而损伤的部分恢复是由强电子激发的退火效应引起的;另外,离子的速度在损伤的建立过程中也起了一定的作用 相似文献
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采用多种手段研究了 35Me V/u的 Ar离子辐照聚酯 (PET)膜产生的微观结构变化 .结果表明 ,辐照使聚酯的化学键断裂并产生了炔端不饱和基团和自由基 .断键主要发生在乙二醇残留物、苯环的对位和酯的 C— O键上 .随着吸收剂量的增加 ,材料的结晶度逐渐降低 ,由原始的41 .7%减至最高辐照量时的 1 5.0 % .研究发现 ,聚脂的非晶化转变截面与电子能损呈线性关系 ;断键和非晶化效应主要取决于样品的吸收剂量 ,并存在一个约 4.0 MGy的阈值.Stacked polyethylene terephthalate films were irradiated with 35 MeV/u Ar ions at room temperature. The ion induced effects were studied by ultraviolet visible spectrometer, Fourier transform infrared spectroscopy, X ray diffractometer, X ray photoelectron spectroscopy, electron spin resonance spectroscopy and differential scanning calorimetry. Bond breaking and the formation of alkyne end groups and free radicals were observed. The bond breaking processes occurred mainly... 相似文献
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用能量为22 MeV/u的 Fe离子在室温和真空条件下辐照了多层堆叠的半晶质聚酯膜, 采用傅里叶转换红外吸收光谱、 紫外/可见吸收光谱 和X射线衍射技术分析测量了辐照后聚酯膜的微观结构所发生的变化, 详细研究了分子结构的变化和非晶化转变与离子剂量、 离子在样品中的平均电子能损以及吸收剂量的依赖关系. 分析结果表明: 辐照导致化学键的断裂、 新化学键的形成和非晶化转变. 非晶化效应和化学键的断裂随离子剂量和电子能损的增加而增大, 但变化的总量仅依赖于总的吸收剂量, 表明在所涉及的能损范围里, 辐照产生的变化与辐照离子的种类和能量没有直接的关系, 而只决定于材料对辐照离子能量的吸收程度. Semicrystalline polyethylene terephthalate (PET) film stacks were irradiated with 22 MeV/u Fe ions at room temperature under vacuum. Ion beam induced microscopic structural modifications and amorphous transformation were investigated by means of Fourier transform infrared spectrosocopy (FTIR), ultraviolet visible absorption spectrosocopy (UV/Vis) and X ray diffractometer (XRD). It was found that irradiation induces bond breaking, formation of new free radiculs and amorphous transformation. These effects were found to depend on ion fluence , the electronic energy loss and aborbed dose. The creation of alkyne groups was found only at the aborbed dose higher than 5.0 MGy. 相似文献
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高剂量Ar离子辐照Si缺陷产生及其退火行为EPR研究 总被引:2,自引:1,他引:1
112MeVAr离子在50K以下的低温辐照Si到8×1014/cm2剂量,室温下采用电子顺磁共振技术分析了由辐照引起的缺陷产生及其退火行为,结果表明:Ar离子辐照在Si中引起了中性四空位(Si-P3心)、带正电荷的〈100〉劈裂的双间隙子(Si-P6心)以及连续的非晶层3种缺陷的形成. 在200℃的退火温度,Si-P3心和Si-P6心消失,这时带负电荷的五空位(Si-P1心)开始生长,Si-P1心可以保持到550℃左右的退火温度. 在350℃时,可以明显地观测到另一个含有更多空位的顺磁缺陷心(Si-A11心).连续非晶层的再结晶需要600℃以上的温度,并且在整个退火过程中,非晶顺磁共振线的线型和线宽保持不变. 定性地讨论了结果. 相似文献
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简要介绍了快重离子在固体材料中强电子激发效应的基本特点、研究现状和在HIRFL上获得的部分实验结果,并对今后的研究工作进行了展望。In this paper the outline of intense electronic excitation effects in solid materials induced by swift heavy ions and international research status were briefly reviewed. Few examples of experimental results obtained on HIRFL were presented. And also the developing tendency in the field was looked into the future. 相似文献
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简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data. 相似文献
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