同步辐射讲座 第二讲 同步辐射X射线荧光及其在植物微量元素分析中的应用

比较了同步辐射（SR）X射线荧光（XRF），电子和质子激发的X射线谱，介绍了XRF谱的采集方法及数据处理方法（主要是能谱方法），智能方法的无标样（基本参数法）定量分析原理，以及近期在植物微量元素分析中得到的结果。     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

Multiparty Quantum Secret Sharing of Key Using Practical Faint Laser Pulses

Based on a bidirectional quantum key distribution protocol [Phys. Rev. A 70 (2004)012311], we propose a (m-1, m-1)-threshold scheme of m (m≥3)-party quantum secret sharing of key by using practical faint laser pulses. In our scheme, if all the m-1 sharers collaborate, they can obtain the joint secret key from the message sender. Our scheme is more feasible according to the present-day technology.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

100μm远红外FEL系统单一微波源实验

自由电子激光性能主要取决于电子束的品质，而电子束的品质主要依赖于微波加速场的稳定。特别是对自由电子激光用户装置，对微波源的稳定性要求更高。中物院FEL必须解决的问题其中之一有必须提高FEL自发辐射的稳定性。设计的系统中因采用了两个速调管放大器分别给注入器和加速器提供微波功率，两个放大器相位的抖动(随机的)自然会引起能量的变化，尤其在低能段还会影响到束流的品质。2003年采用了中科院电子所首批研制的KL-54速调管进行单波源改进实验，为了减少微波传输中的损耗，引进了3端口大功率环行器，使功率损耗减少了20％，与此同时设计生产了大功率电调功分器和电调移相器，使单一微波源建立起来，达到了满意的结果。     

La2CaB10O19∶Eu3+的VUV-VIS范围光谱的研究

研究了La2CaB10O19∶Eu3+红色发光材料的高分辨发射光谱和UV-VUV激发光谱. 根据发射光谱和荧光寿命, 认为进入晶格的Eu3+占据了两种格位, 一种Eu3+占据了与O2-离子十配位的La3+的格位, 另一种Eu3+则占据了与O2-离子八配位的Ca2+的格位. 又从激发光谱的分析中, 得到Eu3+的电荷迁移带(CTB)是峰值位于244 nm的宽带, 而位于130～170 nm之间的成份复杂的宽带包括硼酸盐基质的吸收带和Eu3+的f-d跃迁的结论.     

铕掺杂BaPbO3的EXAFS研究

采用扩展Ｘ射线吸收精细结构方法，研究了铕掺杂ＢａＰｂＯ３多晶粉末中Ｅｕ，Ｐｂ两种原子的近邻结构。Ｅｕ的掺杂，导致八面体中金属Ｐｇ，Ｅｕ的配位数降低。