High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10¹⁰cm^-2·eV^-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^-2·eV^-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.     

间氯苯甲酸在Pd/Ti电极上的电化学脱氯反应

以Ti为基底电极, 在PdCl₂溶液中电沉积制备了Pd/Ti电极, 采用SEM和XPS进行表征. 采用循环伏安法研究了Cu, Ag, Ti和Pd/Ti电极对间氯苯甲酸(3-CBA)的电还原特性, 与Cu, Ag和Ti电极相比, Pd/Ti电极对3-CBA有较好的电化学还原活性. 同时采用电化学原位红外反射光谱对3-CBA在Pd/Ti电极上的电还原反应机理进行了系统分析, 结果表明3-CBA在Pd/Ti电极上的电化学脱氯反应是一个脱氯加氢过程, 3-CBA首先得到一个电子形成阴离子自由基中间体, 随后释放一个氯离子, 产生苯甲酸盐的自由基, 最后该自由基得到一个电子并夺取一个氢质子, 在电极表面脱去氯得到最终产物苯甲酸.