苯并咪唑-镍(Ⅱ)-L-α-氨基酸配合物的合成及其SOD活性

苯并咪唑(bim)和NiCl<,2>·6H<,m2>O分别与L-丙氨酸(L-ala),L-亮氨酸(L-leu)和L-精氨酸(L-arg)反应,合成了三种新的Ni-SOD模拟物:Ni(bim)<,2>(L-ala)<,2>(1),Ni(bim)2(L-leu)<,2>·H<,2>O(2)和Ni(bim)2(L-arg)<,2>(3),其结构经UV-Vis,IR,元素分析和摩尔电导率表征.用改进的氮蓝四唑(NBT)光还原法测定了1～3对O<,2><'->·歧化的催化作用,结果显示:1～3的IC<,50>值分别为0.24 μmol·L<'-1>,0.39 μmol·L<'-1>和0.37μmol·L<'-1>,表明1-3均具有良好的超氧化物歧化酶活性.     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.     

Multi-wafer 3C—SiC heteroepitaxial growth on Si(100) substrates

<正>Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands.Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system which was designed to be have a high-throughput,multi-wafer(3×2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies,structures and electronics are characterized systematically.The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD,thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%~7%and 6.7%~8%,respectively,and within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 1%and 0.8%,respectively.     

2-氨甲基苯并咪唑-铜(Ⅱ)-羧酸配合物的合成、抗菌活性及与DNA的作用

合成了2个三元铜(Ⅱ)配合物:[ Cu(AMB)(L-Tyr)Cl]·1.2H2O(1)和[Cu2(AMB) 2(NAA)2Cl2]·H2O(2)[ AMB=2-氨甲基苯并咪唑,L-Tyr=L-酪氨酸,NAA=萘乙酸根],并通过元素分析、摩尔电导率、IR和UV-Vis对配合物1和2进行了表征.用二倍稀释法测定了配合物1...