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基于密度泛函理论的第一性原理计算, 系统研究了类石墨烯氮化镓(g-GaN)和掺杂过渡金属原子(TM)的 g-GaN 对 Cl2和CO气体分子的吸附行为。结果表明, Cl2和 CO在本征 g-GaN上的吸附均为物理吸附, 2个体系的吸附能均为正值, 表明体系不稳定。相反, Cl2和 CO在 Fe和 Co掺杂的 g-GaN上吸附时的吸附能为负值, 且吸附能较小, 表明吸附体系稳定。通过分析态密度、电荷密度差和能带结构等性质, 可以得出结论:过渡金属原子的引入能有效增强气体分子与 g-GaN之间的相互作用。 相似文献
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Evolution of defects and deformation mechanisms in different tensile directions of solidified lamellar Ti-Al alloy
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Two-phase γ-TiAl/α2-Ti3Al lamellar intermetallics have attracted considerable attention because of their excellent strength and plasticity. However, the exact deformation mechanisms remain to be investigated. In this paper, a solidified lamellar Ti-Al alloy with lamellar orientation at 0°, 17°, and 73° with respect to the loading direction was stretched by utilizing molecular dynamics (MD) simulations. The results show that the mechanical properties of the sample are considerably influenced by solidified defects and tensile directions. The structure deformation and fracture were primarily attributed to an intrinsic stacking fault (ISF) accompanied by the nucleated Shockley dislocation, and the adjacent extrinsic stacking fault (ESF) and ISF formed by solidification tend to form large HCP structures during the tensile process loading at 73°. Moreover, cleavage cracking easily occurs on the γ/α2 interface under tensile deformation. The fracture loading mechanism at 17° is grain boundary slide whereas, at 73° and 0°, the dislocation piles up to form a dislocation junction. 相似文献
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基于密度泛函理论的第一性原理计算,系统研究了类石墨烯氮化镓(g-GaN)和掺杂过渡金属原子(TM)的g-GaN对Cl2和CO气体分子的吸附行为。结果表明,Cl2和CO在本征g-GaN上的吸附均为物理吸附,2个体系的吸附能均为正值,表明体系不稳定。相反,Cl2和CO在Fe和Co掺杂的g-GaN上吸附时的吸附能为负值,且吸附能较小,表明吸附体系稳定。通过分析态密度、电荷密度差和能带结构等性质,可以得出结论:过渡金属原子的引入能有效增强气体分子与g-GaN之间的相互作用。 相似文献
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