首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1篇
  免费   1篇
化学   1篇
物理学   1篇
  2022年   1篇
  2010年   1篇
排序方式: 共有2条查询结果,搜索用时 15 毫秒
1
1.
将半理想溶液理论和Butler方程相结合建立了预测多元电解质溶液表面张力的新型线性预测方程.新方程可由二元系数据预测多元系的表面张力数据,而不涉及任何多元交互作用参数.利用不同温度下24个混合电解质溶液的表面张力数据对新方程进行了系统检验.结果表明新方程可利用298.15K时二元系的渗透压系数和不同温度下二元系的表面张力数据预测不同温度下高浓度的多元系的表面张力数据,且预测结果与实验数据符合得很好,并且预测结果普遍优于基于Pitzer方程的表面张力模型.  相似文献   
2.
Yuan-Yuan Jin 《中国物理 B》2022,31(11):116104-116104
The recent discovery of the novel boron-framework in boron-rich metal borides with complex structures and intriguing features under high pressure has stimulated the search into the unique boron-network in the metal monoborides or boron-deficient metal borides at high pressure. Herein, based on the particle swarm optimization algorithm combined with first-principles calculations, we thoroughly explored the structural evolution and properties of TiB up to 200 GPa. This material undergoes a pressure-induced phase transition of $Pnma$ $\to $ $Cmcm$ $\to $ $Pmmm$. Besides of two known phases $Pnma$ and $Cmcm$, an unexpected orthorhombic $Pmmm$ structure was predicted to be energetically favored in the pressure range of 110.88-200 GPa. Intriguingly, the B covalent network eventually evolved from a one-dimensional zigzag chain in $Pnma$-TiB and $Cmcm$-TiB to a graphene-like B-sheet in $Pmmm$-TiB. On the basis of the microscopic hardness model, the calculated hardness ($H_{\rm v}$) values of $Pnma$ at 1 atm, $Cmcm$ at 100 GPa, and $Pmmm$ at 140 GPa are 36.81 GPa, 25.17 GPa, and 15.36 GPa, respectively. Remarkably, analyses of the density of states, electron localization function and the crystal orbital Hamilton population (COHP) exhibit that the bonding nature in the three TiB structures can be considered as a combination of the B-B and Ti-B covalent interactions. Moreover, the high hardness and excellent mechanical properties of the three TiB polymorphs can be ascribed to the strong B-B and Ti-B covalent bonds.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号