四波前横向剪切干涉仪的关键技术研究

四波前横向剪切干涉（QWLSI）是一种精度高、动态范围大、分辨率高、抗干扰能力强的瞬态波前检测技术。本文结合国内外相关研究工作,重点阐述了本课题组在分束器件设计、多方向横向剪切干涉图处理、测量误差校准等QWLSI的关键技术研究方面取得的进展。以关键技术研究为基础,本课题组开发了QWLSI的原理装置,其绝对测量精度（RMS）达到0.0038λ（2.4 nm,λ=635 nm）,重复测量精度（RMS）达到0.0004λ（0.25 nm,λ=635 nm）。QWLSI与商品化的夏克-哈特曼波前传感器的对比实验结果表明,两种仪器对含有第4～36项单项Zernike像差入射波前的测量结果基本一致。     

Thermal-induced nonlinear optical characteristics of ethanol solution doped with silver nanoparticles

The investigation of nonlinear optical characteristics of ethanol solution doped with is presented. A large thermal-induced third-order nonlinear refractive index up to silver nanoparticles 1.941× 10^-7 cm2/W is obtained from the mixed solution under 488-nm continue wave （CW） laser irradiation, which may result from surface plasmon resonance （SPR） enhancement effect of silver nanoparticles as well as high thermo-optic coefficient and low thermal conductivity of ethanol. Obvious spatial self-phase modulation and influence of thermal-induced negative lens effect are observed when a beam propagates through this solution, indicating promising applications such as optical limiting, beam flattening, and so on.     

基于职教云与易思在线的水污染治理技术课程混合式教学实践与成效

鉴于水污染治理技术物理法、化学法、生物法及物理化学法的各自特征,在教学实践中结合在线课程资源,融合虚拟仿真网络平台,构建了基于职教云与易思在线双平台的混合式教学模式。同时开展化学实验实训,多渠道多方位引导学习,全面培养学生技术技能,提高了教学改革的效果。     

Femtosecond laser-induced microstructure in Foturan glass

We report on the microstructure formation in Foturan glass, induced by 1~kHz, 120 femtosecond laser irradiation. It is found that the line-shaped filamentation, not void array tends to be formed in this glass. This is different from our previous experimental results in fused silica and BK7 glasses. A possible mechanism Ag$^+$ captures the free electrons generated by laser, is proposed to explain the observed phenomena.     

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Nanowire devices with back gate are fabricated in a heavy doped ultra thin SOI layer by electron beam lithography. Regular and periodic Coulomb oscillations with single dot behavior are observed in an appropriate back gate voltage range. The oscillation period can be determined by the back gate capacitance. The role of the back gate can control the electrical characteristics from the multi-dot junction regimes to the single dot junction regimes. These Coulomb oscillations due to single-electron tunneling are not smeared out by thermal vibration energy when the temperature is less than 40 K.     

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density （3× 10^11 cm^-2 ） were deposited on ultra-thin tunnel oxide layer （- 3 nm） and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanoerystals, which slows the charge loss rate.     

二级6-8型静高压装置厘米级腔体的设计原理与实验研究

利用大腔体静高压装置的实验数据,提出了"极限压缩体积比"的概念以及腔体与组装设计的一般性原理。通过对极限压缩体积比的分析,设计出了样品腔体达到厘米级的36/20(正八面体传压介质边长为36mm/末级压砧正三角形截角边长为20mm)组装。采用原位电阻观测Bi(Ⅲ-Ⅴ,7.7GPa),ZnTe(Ⅰ-Ⅱ,5GPa;Ⅱ-Ⅲ,8.9~9.5GPa;半导体-金属,11.5~13.0GPa)和ZnS(半导体-金属,15.6GPa)在高压下相变的方法,标定了36/20组装的腔体压力。实验结果表明所设计样品腔的尺寸大于10mm,压力可以达到15GPa以上。本工作使得基于国产6×2 500t(吨)铰链式六面顶压机的二级6-8型静高压装置在高压实验研究中具有更加广阔的应用前景。     

人工合成翡翠研究进展

几个世纪以来,随着工艺技术以及珠宝行业的蓬勃发展,有着“玉石之王”之称的翡翠在装饰和收藏方面的需求量日益激增。但翡翠在自然界中的形成条件极其苛刻,导致其供应量难以满足人们的需求。因此,人工翡翠合成技术的发展对于解决天然翡翠供给不足的问题大有裨益,不仅能够推进翡翠高产化,还能加快其市场化进程。现有的人工合成翡翠的主流工艺大多采用高温高压法,该方法的关键是翡翠前体的合成以及玻璃质非晶硬玉到硬玉的转化。在这个过程中,找到一种条件相对温和的翡翠前体合成方法成为了人工合成翡翠的难点和突破点。本文论述了近年来国内外翡翠合成的最新研究热点和应用情况,着重介绍了固相烧结法、化学合成法和溶胶凝胶法三种翡翠前体常规制备技术。并从不同的制备技术路线出发,评估了各种方法的优缺点,同时对未来人工合成翡翠领域的发展进行了展望。     

影响GaN基蓝光LED能带结构与光谱特性关系的仿真研究

本文采用Silvaco TCAD软件对GaN基InGaN/GaN量子阱蓝光发光二极管(LED)的光谱特性进行了仿真研究。研究结果表明:光谱会随着注入电压的增加而产生蓝移现象,并出现0.365μm处的紫外光发光峰;发光效率在正向电流较小时增长很快,随着正向电流进一步增加而逐渐趋于饱和;随着量子阱中In组分和量子阱阱层厚度的增加,发光光谱出现红移现象,并且发光效率下降。仿真结果对GaN基InGaN/GaN量子阱结构蓝光LED的设计和优化提供一定的依据。