聚丙烯纤维辐射接枝进展

本文对聚丙烯纤维的辐射接枝方法、特征和机理、以及其研究进展和表征进行了扼要综述。     

原子吸收无火焰钽舟法测定岩石中痕量镱

原子吸收无火焰钽舟法测定岩石样品中痕量镱,除铝、钠、硅、铁、钙以外其它元素不干扰测定。样品分解后,经PMBP萃取分离用本法测定获得了良好结果。该法灵敏度为6×10~(-12)克/1％吸收。 (一)仪器与主要试剂 1.以QR-50型分光光度计为主体组装的原子吸收分光光度计。 2.混合指示剂;溴甲酚绿及甲基红各0.2％乙醇溶液以3∶1体积混合。     

聚合物电流变体

本文概述了电流变体的发展概况，电流变机理、电流变效应的影响因素及聚合物电流变体的研究现状，并介绍了电流变化的组成春在机械制造、自动控制等领域的应用前景。     

微波硫灯发射光谱的理论模拟

通过实验观测了微波硫灯的发光光谱. 利用从头计算的多组态准简并微扰理论方法, 采用cc-pVQZ基组计算了S2分子B3Σu--X3Σg-态和B″3Πu-X3Σg-态的跃迁矩及其振动态之间跃迁的弗兰克-康登因子, 导出了S2分子振动分辨发射谱. 同时, 利用含时密度泛函方法计算了Sn(n=2~8)分子的吸收谱. 将计算得到的S2分子振动分辨发射谱与实验所测得的光谱分布进行了比较分析, 解释了微波硫灯的宽谱区发光光谱的特性.     

基于关联规则和技术功效矩阵的企业技术创新机会发现和辅助决策方法

为助力科技型创新企业准确且快速地从外部捕获创新技术机会, 提出一种企业技术机会发现和辅助决策方法. 首先, 挖掘领域内的技术热点、技术重点和有潜力的技术作为领域技术创新机会. 然后, 通过关联规则分析领域技术机会和企业已有技术之间的相关性, 进一步结合技术掌握度和新颖度, 识别更适合企业的技术创新机会. 最后, 创新性地采用Sen-BERT语言模型和K-means聚类方法构建技术功效矩阵, 辅助企业从功能需求的角度进行技术创新决策. 以电动汽车领域为例验证了该方法的可行性.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

稀土共晶闪烁材料研究进展

闪烁材料已经被广泛用于高能物理、核医学影像、工业无损检测、港口安全检查、地质勘探、航天探测等领域。具有5d→4f允许跃迁的三价稀土离子激活的稀土闪烁材料具有高光输出和快荧光衰减特性,已成为无机闪烁材料的重要组成部分。随着上述各应用领域,尤其是核医学诊断对成像分辨率提出了越来越高要求,核医学影像对探测成像设备的核心材料——闪烁材料性能的要求也有了更高的要求。最近研究表明,具有有序微纳结构的共晶闪烁材料由于具有微米级的像素单元,在对高能射线探测中可显著提高成像分辨率,而受到了特别的关注。本文从共晶闪烁材料的制备、性能优化及应用等方面,综述了稀土共晶闪烁材料中有序微纳结构的形成机制及其对材料闪烁性能的影响,以及近年来稀土共晶闪烁材料的研究进展。