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The hybrid sensitizer rhodamine B and coumarin or eosin and coumarin is used to sensitize nanocrystalline porous films. Absorption of the nanocrystalline photovoltaic cell (NPC) is improved in visible light. The performance of these cells is more effective than that of cells sensitized only by sensitizer rhodamine B or eosin. In the simulative solar light, cell sensitized by hybrid sensitizer rhodamine B and coumarin can get open circuit voltage (VOC) of 550 mV and short circuit current (ISC) of 0.1375 mA/cm2. 相似文献
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为满足车载激光雷达接收光学系统在复杂环境实际应用中的温度适应性要求,本文基于一种将长焦镜头与线阵探测器相结合,通过局部图像级成像显著提高激光雷达系统探测分辨率的方案,设计了一款轻小型无热化的四片式全玻璃长焦镜头,研究了其在不同温度下的像面漂移。分析结果表明,所设计的长焦镜头在整个-40~100℃的温度范围内焦移量为0.021 mm,小于焦深0.074 mm,在30 lp/mm处各视场调制传递函数(MTF)均大于0.5,全视场内光斑半径在7μm以下,水平及垂直角分辨率为0.045°(H)×0.045°(V)。此长焦接收光学系统结构简单、成像质量高、环境适应性强,在车载激光雷达领域具有良好的应用前景。 相似文献
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利用微机械加工技术制造出一种新型微扫描镜,结合半导体激光器,可用于投影显示.激光器发出的光束被两个分别沿着X轴、Y轴扭转的镜面相继反射,扫描出二维图形.实验测得扫描镜在15 V电压,频率为扫描镜谐振频率2倍的方波信号驱动下,镜子的光学扫描角度达±12°.由于每个镜子都沿各自轴以简谐规律扭转,扫描所得投影为李萨如图形.通过分析图形的形成原理并用Matlab仿真,选出了适用用于任意图案显示的扫描镜谐振频率组合(X轴2 400 Hz, Y轴2 425 Hz).该组合可以形成194×192个像素点,刷新频率为25 Hz.在此基础上提出了一种通过调制激光开关来进行投影显示的方法. 相似文献
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提出了一种利用临界屈曲法在线测量微机械薄膜残余应力的新结构,并采用表面微加工技术制作了两种测试样品.搭建了在线观测实验装置来实时监控释放过程中结构出现的临界屈曲变形模态,由此判断出结构内部的应力状态,同时在测得临界刻蚀深度的情况下,采用有限元方法计算出残余应力大小.借助有限元方法,先研究了多个参数对临界屈曲应力的影响,然后利用这种新结构对薄膜残余应力进行了实际测量,所得结果与微旋转结构的应力测量结果基本吻合.分析及实验表明,新结构在测量薄膜残余应力方面有许多优点,具有较高的实用价值,不仅能满足大量程的应力检测要求,而且只用一个结构就可以同时测量压应力和拉应力,从而极大提高了器件版图空间的利用率. 相似文献
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Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation 下载免费PDF全文
By formation of an intermediate semiconductor layer (ISL) with a
narrow band gap at the metallic contact/SiC interface, this paper
realises a new method to fabricate the low-resistance Ohmic contacts
for SiC. An array of transfer length method (TLM) test patterns is
formed on N-wells created by P+ ion implantation into
Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic
contacts to n-type 4H-SiC could be formed by using Germanium ion
implantation into SiC. The specific contact resistance ρc as low as 4.23× 10-5~Ωega \cdotcm2 is
achieved after annealing in N2 at 800~°C for 3~min,
which is much lower than that (>900~°C) in the typical SiC
metallisation process. The sheet resistance Rsh of the
implanted layers is 1.5~kΩega /\Box. The technique for
converting photoresist into nanocrystalline graphite is used to
protect the SiC surface in the annealing after Ge+ ion
implantations. 相似文献
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结合李萨如图像扫描和微机电系统(MEMS)二维谐振式扫描镜,提出一种新颖的投影显示方法。相比于传统的投影显示技术,该技术具有控制简单、能耗低、体积小及重量轻等优点。首先阐述了该投影显示技术中像素的定义与划分,然后从理论上分析了刷新率、分辨率和谐振频率之间的关系,以及选择谐振频率的约束条件,最后通过Matlab软件进行仿真验证,并使用研制出的扫描镜样件搭建了投影显示样机,成功投影出分辨率为260×180的图像,从而验证谐振频率选择约束的有效性以及该投影显示方法的可行性,为实际工程应用奠定基础。 相似文献
7.
Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode 总被引:4,自引:0,他引:4 下载免费PDF全文
A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. 相似文献
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