Transverse profile expansion and homogenization at target for the injector Scheme-Ⅰ test stand of China-ADS

For the injector Scheme-Ⅰ test stand of the China-ADS (Accelerator Driven subcritical System), a beam with the maximum power of 100 kW will be produced and transported to the beam dump. To solve the very high thermal load problem at the dump, two measures are taken to deal with the huge power density at the target. One is to enlarge the contact area between the beam and the target, and this is to be accomplished by expanding the beam profile at the target and using slanted target plates. The other is to produce a more homogenous beam profile at the target to minimize the maximum power density. Here the beam dump line is designed to meet the requirement of beam expansion and homogenization at 3 different energies (3.2 MeV, 5 MeV and 10 MeV), and the step-like field magnets are employed for the beam spot homogenization. Taking into account the fact that the space charge effects are very strong at such low beam energies, the simulations have included space charge effects and errors which show that the beam line can meet the requirements very well. In the meantime, the alternative beam design using standard multipole magnets is also presented.     

孟赛尔色卡(学生用)试制

当今世界上存在着三套主要的色序系统;孟赛尔色序系统、自然色系统以及美国光学学会的均匀颜色坐标系统。后者是美国光学学会花了30余年的时间于1977年正式研制成功,共有558种颜色的色卡。自然色系统在欧州比较流行。而世界上应用得最广泛的要算是孟赛尔色序系统了。它是由孟赛尔所创立,在美国则最早于1915年出版“孟赛尔颜色图谱”。     

颜色科学在美国

颜色科学的研究在美国开始得较早也较广泛。在几所大学里有专门的研究实验室,如伦塞利尔理工学院的颜色测量实验室,理海大学的颜色科学实验室以及罗彻斯特理工学院的孟赛尔颜色科学实验室等。可惜的是,因为导师退休,前二个实验室已分别于1983年和1984年关闭。工业界与颜色有关的公司也设有颜色实验室,如柯达公司,杜邦公司等。而专门生产测色仪器的公司则更不在话下了。美国有一个颜色协会(ISCC),成立于1931年,至今已有五十多年的历史,它是由三十几个专业协会联合组织起来的,同时还有近30个专题委员会。专题委员会是为了颜色科学中特定的问题而成立的。     

Transverse profile expansion and homogenization at target for the injector Scheme-I test stand of China-ADS

For the injector Scheme- test stand of the China-ADS(Accelerator Driven subcritical System), a beam with the maximum power of 100 k W will be produced and transported to the beam dump. To solve the very high thermal load problem at the dump, two measures are taken to deal with the huge power density at the target.One is to enlarge the contact area between the beam and the target, and this is to be accomplished by expanding the beam profile at the target and using slanted target plates. The other is to produce a more homogenous beam profile at the target to minimize the maximum power density. Here the beam dump line is designed to meet the requirement of beam expansion and homogenization at 3 different energies(3.2 Me V, 5 Me V and 10 Me V), and the step-like field magnets are employed for the beam spot homogenization. Taking into account the fact that the space charge effects are very strong at such low beam energies, the simulations have included space charge effects and errors which show that the beam line can meet the requirements very well. In the meantime, the alternative beam design using standard multipole magnets is also presented.     

Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

Charge carrier injection is performed in Pr0.7Ca0.3MnO3 （PCMO） hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-strueture oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in mieroeleetronics with some novel properties, in which the interface is very important.     

Fantastic Behaviour of High-TC Superconductor Junctions: Tunable Superconductivity

Carrier injection performed in oxygen-deficient YBa2 Cu307_~ （YBCO） hetero-structure junctions exhibits tunable resistance that is entirely different from the behaviour of semiconductor devices. Tunable superconductivity in YBCO junctions, increasing over 20 K in transition temperature, has achieved by using electric processes. To our knowledge, this is the first observation that intrinsic property of high Tc superconductors＇ superconductivity can be adjusted as tunable functional parameters of devices. The fantastic phenomenon caused by carrier injection is discussed based on a proposed charge carrier seff-trapping model and BCS theorv.     

Electric gating of the multichannel conduction in LaAlO_3/SrTiO_3 superlattices

The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO₃/SrTiO₃(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices(SLs)fabricated on the TiO₂-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.     

中国散裂中子源注入系统电切割磁铁物理设计

利用OPERA/TOSCA大型有限元分析软件对中国散裂中子源/快循环同步环（CSNS/RCS）注入系统的直流C型特种电切割磁铁进行了2维/3维磁场计算和设计,通过放置1 mm厚的DT4铁磁性屏蔽板,可将循环束流轨道上的边缘漏场比降低至2.610-4,大大减小了切割板外侧的边缘漏场对循环束流动力学的影响。另外,对该类型切割磁铁的线圈做了详细的水冷计算,以保证磁铁能在适当的温度下运行。结果表明,无论从物理上还是工程上,该类型磁铁完全可以满足CSNS/RCS注入系统物理设计以及长期稳定运行的要求。     

BESⅢ晶体量能器设计中的蒙特卡罗研究

在BESⅢ晶体量能器的设计、研制过程中,利用7×7CsI晶体探测单元的模拟程序,对其性能做了精细的蒙特卡罗研究.给出了与非相干噪声、能量线性、晶体光输出均匀性、位置依赖等相关的模拟结果.     

Physical design of superconducting magnet for ADS injection Ⅰ

A superconducting solenoid prototype magnet for Accelerator Driven Subcritical System (ADS) Injection Ⅰ has been designed and fabricated, which has also been tested in a liquid Helium state inside a vertical Dewar in the Haerbin institute of Technology in November 2012. The design current was 210 A, when the test current reached 400 A no quench occurred so the solenoid magnet was forced to quench by the embedded heaters. The integral field strength, leakage field at the nearby upstream and downstream superconducting spoke cavities all meet the design requirements. At the same time, it also checked the reliability of the vertical test Dewar and the quenched detection system. The superconducting prototype magnet has accumulated valuable experiences for the coming batch magnets production and cryogenic test.