Defects related emission and nanosecond optical power limiting in CuS quantum dots

We report optical and nonlinear optical properties of CuS quantum dots and nanoparticles prepared through a nontoxic, green, one-pot synthesis method. The presence of surface states and defects in the quantum dots are evident from the luminescent behavior and enhanced nonlinear optical properties measured using the open aperture Z-scan, employing 5 ns laser pulses at 532 nm. The quantum dots exhibit large effective third order nonlinear optical coefficients with a relatively lower optical limiting threshold of 2.3 J cm⁻², and the optical nonlinearity arises largely from absorption saturation and excited state absorption. Results suggest that these materials are potential candidates for designing efficient optical limiters with applications in laser safety devices.     

Synthesis and Photophysical Properties of a Sc3N@C80‐Corrole Electron Donor–Acceptor Conjugate

Embedding endohdedral metallofullerenes (EMFs) into electron donor–acceptor systems is still a challenging task owing to their limited quantities and their still largely unexplored chemical properties. In this study, we have performed a 1,3‐dipolar cycloaddition reaction of a corrole‐based precursor with Sc₃N@C₈₀ to regioselectively form a [5,6]‐adduct ( 1 ). The successful attachment of the corrole moiety was confirmed by mass spectrometry. In the electronic ground state, absorption spectra suggest sizeable electronic communications between the electron acceptor and the electron donor. Moreover, the addition pattern occurring at a [5,6]‐bond junction is firmly proven by NMR spectroscopy and electrochemical investigations performed with 1 . In the electronically excited state, which is probed in photophysical assays with 1 , a fast electron‐transfer yields the radical ion pair state consisting of the one‐electron‐reduced Sc₃N@C₈₀ and of the one‐electron‐oxidized corrole upon its exclusive photoexcitation. As such, our results shed new light on the practical work utilizing EMFs as building blocks in photovoltaics.     

左消半群M与幂单半群B的Schǔzenberger积

本文讨论了每个元都有幂等元作为右单位元的左消半群与幂单半群N的Schuzenberger积M◇N的ρ类，证明了这种半群M与N的Schuzenberger积M◇N的ρ类是右E一半适合半群和弱E-headged半群．     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

Investigation of Galilean invariance of multi-phase lattice Boltzmann methods

We examine the Galilean invariance of standard lattice Boltzmann methods for two-phase fluids. We show that the known Galilean invariant term that is cubic in the velocities, and is usually neglected, is a major source of Galilean invariance violations. We show that incorporating a correction term can improve the Galilean invariance of the method by up to two orders of magnitude for large velocities. We found that this is true in particular for methods in which the interactions are incorporated through a forcing term. Methods in which interactions are incorporated through a non-ideal pressure tensor only benefit for large velocities.     

Synchronization of complex dynamical networks with time delays

In the present paper, two kinds of dynamical complex networks are considered. The first is that elements of every node have different time delays but all nodes in such networks have the same time-delay vector. The second is that different nodes have different time-delay vectors, and the elements of each node also have different time delays. Corresponding synchronization theorems are established. Numerical examples show the efficiency of the derived theorems.     

Comparison between smoothed dissipative particle dynamics and Voronoi fluid particle model in a shear stationary flow

We present a numerical comparison between two Lagrangian techniques for the simulation of fluids, smoothed dissipative particle dynamics (SDPD) and Voronoi fluid particle model. These methods reproduce the movement of the fluid with extensive particles. The main differences between these techniques are the volume definition and the implementation of the second derivatives. The Voronoi model is computationally more efficient than SDPD. For quasi-regular meshes, the Voronoi method is more accurate than SDPD but for arbitrary configurations its precision degrades. This means that the SDPD discrete versions of the second derivative operators are better than the ones used in the Voronoi method.     

Influence of swirl on the stability of a rod in annular leakage flow

The influence of swirl (flow rotation) on the stability of a rod in annular leakage flow is investigated. Under the assumption of laminar flow and plane vibrations (no whirling), it is shown that the swirl acts, in effect, as an elastic foundation with negative foundation stiffness, the magnitude being proportional to the mean circumferential flow rate squared. Consequently, swirl always lowers the critical axial flow speed in case of divergence instability of a rod of finite length. Numerical analysis is needed to predict the effect of swirl in case of flutter instability of a finite rod; this is not performed here. However, for the flutter-like instability of travelling waves in an infinite rod-channel system, it is shown analytically that swirl again always lowers the critical axial flow speed. Finally, it is found that by circumferential flow alone, the travelling waves are extinguished at a certain flow rate, followed by a divergence-like instability.     

The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS.