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The nonlinear quantum vibrational energy spectra of amide-I in the molecular crystals acetanilide are calculated by using the discrete nonlinear Schr?dinger equation appropriate to this kind of crystals.The numerical results obtained by this method are in good agreement with the experimental values. Meanwhile, the energy levels at high excited states have also been obtained for the acetanilide, which is helpful in researching the Raman scattering and infrared absorption properties of the this kind of crystals. 相似文献
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运用密度泛函理论结合非平衡格林函数的方法对MgB2直线原子链与两半无限Au(100)电极构成纳米结点的电子输运特性进行了第一性原理计算.在模拟Au-MgB2-Au纳米结点的拉伸过程中,计算了结点在不同距离下的结合能与电导.结果发现结点的Au-B键长为1.90A,B-Mg键长为2.22A时,结合能最大,结构最稳定,此时结点平衡电导为0.51G0(G0=2e^0/h).通过计算投影态密度发现电子通过结点时主要是通过B、Mg原子的px和py电子轨道形成的π键进行传输的.在-1.5~1.5V的电压范围内,结点的电流-电压近似为线性关系,表现出类似金属的导电性质,而当正负电压高于15V时,电流对称性逐渐减小,即存在负微分电阻效应,从不同电压下透射谱的变化对负微分电阻现象进行了分析与讨论. 相似文献
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The electronic structures, the effective masses, and optical properties of spinel CdCr_2S_4 are studied by using the fullpotential linearized augmented planewave method and a modified Becke–Johnson exchange functional within the densityfunctional theory. Most importantly, the effects of the spin–orbit coupling(SOC) on the electronic structures and carrier effective masses are investigated. The calculated band structure shows a direct band gap. The electronic effective mass and the hole effective mass are analytically determined by reproducing the calculated band structures near the BZ center.SOC substantially changes the valence band top and the hole effective masses. In addition, we calculated the corresponding optical properties of the spinel structure CdCr_2S_4. These should be useful to deeply understand spinel CdCr_2S_4 as a ferromagnetic semiconductor for possible semiconductor spintronic applications. 相似文献
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The five independent elastic constants of superconducting MgB2 are obtained using the first-principles plane wave method with the new relativistic analytic pseudopotential of the Hartwigsen-Goedecker-Hutter (HGH) scheme in the frame of local density approximation. The dependences of bulk modulus on temperature and pressure are also obtained. It is suggested that the HGH-type pseudopotentials are successful in investigating the ground-state mechanical properties of any solids. 相似文献
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Phase Transition and Thermodynamics of Ruthenium Diboride via First-Principles Calculations
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The pressure induced phase transitions of RuB2 from the OsB2-type structure to the ReB2-type structure are investigated by first-principles calculations based on the plane-wave basis set with the generalized gradient ap- proximation for exchange and correlation. It is found that the phase transition occurs at 18.6 GPa. We predict the phase transition from the OsB2-type RuB2 to the ReB2-type RuB2 at high temperatures for the first time. The dependences of the heat capacity, thermal expansion coefficient, and the Grüneisen parameter on pressure and temperature for OsB2-type RuB2 and ReB2-type RuB2 are also investigated. 相似文献
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利用平面波赝势密度泛函方法和准谐德拜模型研究了SrS从NaCl结构到CsCl结构的相变以及弹性性质.在零温下,我们计算的相变压强为17.9 GPa,这与实验值和其他作者的计算值符合很好.研究还表明:相变压强随温度增加而非线性地增加,然而力学不稳性的压强随温度增加而线性地增加. 相似文献
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阴凯;郭其阳;张添胤;李静;陈向荣 《物理学报》2024,(12):345-354
环氧树脂纳米复合材料在电气绝缘领域应用广泛,通过引入纳米介质实现复合材料介电、绝缘性能的调控以满足特殊应用需求.本文通过五氟苯乙烯与苯乙烯的共聚,制备了表面氟化的聚苯乙烯纳米微球,并以其为填料制备了环氧树脂复合材料.以纯环氧树脂和填充聚苯乙烯纳米微球环氧复合材料作为参照,研究了三种复合材料的直流电导率、介电特性、交直流击穿场强、空间电荷行为并计算了材料内部的陷阱能级.结果表明:填充氟化聚苯乙烯纳米微球的环氧树脂复合材料表现出优异的电学特性,其电导率以及介电常数大幅下降、同时交直流击穿场强获得提高.相比填充无氟聚苯乙烯纳米微球的环氧树脂,氟化聚苯乙烯纳米微球的引入可降低材料的介电损耗,限制空间电荷的注入,并加深基体中的陷阱能级.研究结果可为环氧树脂复合材料介电性能调控设计以及环氧树脂在电子封装应用提供指导. 相似文献
10.
Intermolecular interaction potentials of methane-argon complex calculated using LDA approaches
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The intermolecular interaction potential for methane-argon complex is calculated by local density approximation (LDA) approaches. The calculated potential has a minimum when the intermolecular distance of methane-argon complex is 6.75 a.u.; the corresponding depth of the potential is 0.0163eV which has good agreement with experimental data. We also have made a nonlinear fitting of our results for the Lennard-Jones (12-6) potential function and obtain that V(R)=143794365.332/R^{12}-3032.093 / R^6 (R in a.u. and V(R) in eV). 相似文献