Fabrication of 2D–3D photonic crystal heterostructures by glancing angle deposition

We fabricate 2D–3D photonic crystal heterostructures based on the silicon [001]-diamond:1 square spiral geometry using glancing angle deposition. We compare the normal incidence reflection properties of the fabricated 2D–3D heterostructures to simulated spectra generated using finite-difference time-domain calculations. Reflection peaks are observed, resulting from the presence of a photonic band gap, and defect modes are created by the 2D layer. Deterioration of the reflectance peaks with increased number of vertical spiral periods is observed. A series of square spiral structures are fabricated with a varying number of vertical periods to quantify the degradation of reflection peaks. At normal light incidence, a maximum reflection peak is observed from the film with three vertical periods. Beyond three spiral rotations, deterioration of the substrate-plane periodicity causes scattering losses.     

AFM nanooxidation process - Technology perspective for mesoscopic structures

We study the technology of local anodic oxidation (LAO) by the AFM tip applied to semiconductor heterostructures with two-dimensional electron gas. The aim is to design mesoscopic rings with persistent current and one subband occupied. For this purpose the need is to oxidize narrow lines that represent energy barriers high enough. Using the electrostatic model, we explain the electric field distribution in the system tip-sample just before LAO starts. We study the influence of the conductivity of the cap layer on LAO and explain the origin of the saddle-like profile lines, observed in the experiment. Using Monte Carlo simulation we show that the carrier redistribution in the system with LAO energy barriers effectively lowers the barrier height. In the experimental part we have grown InGaP/AlGaAs/GaAs heterostructures by organometalic vapor phase epitaxy with an active layer only 31 nm below the surface. We have prepared oxide lines on the heterostructures by LAO and characterized them by the temperature-dependent transport measurement.     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

Spin-polarizing properties of heterostructures with magnetic nano elements

The problem of electron resonant and non-resonant scatterings on two magnetized barriers is studied in the one-dimension. The transfer-matrix is built up to exactly calculate the coefficient of the electron transmittance through the system of two magnetic barriers with non-collinear magnetizations. The polarization of the transmitted electron wave for resonance and non-resonance transmittances is calculated. The transmittance coefficient and spin polarization can be drastically enhanced and controlled by the angle between the barrier magnetizations.     

Synthesis and photocatalytic properties of sunlight-responsive BiOBr–CoWO4 heterostructured nanocomposites

Efficient sunlight-responsive BiOBr–CoWO₄ heterostructured nanocomposite photocatalysts were prepared via a chemical precipitation route at 100°C in 4 hours. The prepared BiOBr–CoWO₄ heterostructures were characterized for phase identification, chemical composition, surface morphology, optical properties and surface area using various techniques. The X-ray diffraction pattern of the BiOBr–CoWO₄ nanocomposite was composed of diffraction peaks equivalent to both the tetragonal phase of BiOBr and the monoclinic phase of CoWO₄ nanoparticles. X-ray photoelectron spectral study of the BiOBr–CoWO₄ nanocomposite revealed orbitals of both BiOBr and CoWO₄ compounds. Transmission electron microscopy images revealed that spherical particles of CoWO₄ (20–25 nm) were dispersed on the surface of BiOBr. UV–visible–near-infrared spectral study of the BiOBr–CoWO₄ nanocomposite showed good visible-light absorption. Among the manufactured materials, BiOBr–CoWO₄-2 nanocomposite showed better charge carrier separation efficiency, as demonstrated by photoluminescence and time-resolved fluorescence. To study the practical utility of the prepared materials, their photocatalytic capability was examined for the degradation of rhodamine B (RhB) aqueous solution under sunlight irradiation. The photodegradation results showed that BiOBr–CoWO₄-2 nanocomposite degraded 98.69% RhB solution and the degradation constant was 0.067 min⁻¹, which was 5.6 and 22.5 times larger than that of pure BiOBr and CoWO₄ nanoparticles, respectively, after 60 minutes of sunlight irradiation. The superior photoactivity was facilitated by electron–hole pair separation and transfer driven by the heterostructure interface between BiOBr particles and CoWO₄ nanoparticles. The removal of RhB was initiated by photogenerated h⁺, O₂^{• −} and ^•OH reactive species based on the scavenger effect.     

A study on electrodeposited of ZnO/ZnS heterostructures

ZnO/ZnS heterostructures were synthesized by a two steps electrochemical deposition method. Firstly, ZnS layer was deposited from an aqueous solution containing Na₂S₂O₃ and ZnSO₄ onto indium-doped tin oxide (ITO) coating glass substrate at two deposition potentials. Then, ZnO nanostructures were deposited from an aqueous solution of Zn(NO₃) onto ZnS surface. The as-obtained samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman and UV-visible analysis. The results indicate that the electrodeposition of ZnS layer at ?0.9 V give the best proprieties of ZnO/ZnS heterostructures. Homogeneous and uniform surface of ZnO/ZnS heterostructure was confirmed by AFM images. The XRD patterns indicates a high crystallinity of ZnO/ZnS. A high transmittance of 65% was also noted from UV-Visible spectra and band gap energy as large as 3.6?eV was found.