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Hugo M. Campos Vladislav V. Kravchenko 《Mathematical Methods in the Applied Sciences》2020,43(16):9448-9454
The paper extends some well-known results for analytic functions onto solutions of the Vekua equation regarding the existence and construction of the Bergman kernel and of the corresponding Bergman projection operator. 相似文献
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S. Ryabtsev V. Bashev O. Kushnerov N. Kutseva S. Antropov 《Molecular Crystals and Liquid Crystals》2020,699(1):90-96
AbstractThe effect of ion-plasma deposition on the structure of high-carbon films (at. %) Fe–(20–84) % С, Co–(5–52) % С, Ni–(7–61) % С was investigated. The lattice periods and crystallite sizes of nonequilibrium phases in the as-deposited state and after heating are determined. The temperatures of the beginning and end of the decay of metastable phases during heating at a constant speed are established. The transition from an amorphous to an equilibrium crystalline state in Fe–C films passes through the stage of formation and subsequent decomposition of an intermediate, metastable hcp phase of variable composition. The electrical and hysteretic magnetic properties of the films were measured in the as-deposited state and after heat treatment. The compositions and conditions for producing films with low values of the temperature coefficient of electrical resistance and high coercive force are established. Thus, high-carbon films of Ni–61% C in the as-depoteted state and Fe–69% C films after heating to 900?K are characterized by small TCR values (± 10?6 К?1) over a wide temperature range. 相似文献
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《印度化学会志》2023,100(3):100919
For years, the human race has awaited a more convenient, greener, and largely efficient material for energy conversion and electronic applications. Cu2O thin films produced by spray pyrolysis meet the economic viability and cost requirements, and it is widely assumed that they will lead to the production of functionally viable technologies. The spray pyrolysis method was used to added titanium into copper (I) oxide thin films with a deposition temperature of 200 °C and annealing for 2 h at 200 °C in this study. The Ti-doped Cu2O's optical, surface morphology, and photovoltaic characteristics have all been thoroughly explored. The best characteristics were obtained at 3% Ti doped Cu2O. The near-band emission of Ti-doped Cu2O was moved from 385 nm to 400 nm. The bandgap was reduced from 2.35 to 1.98Ev at 3% Ti doped Cu2O. As a result, Cu2O (Ti)-based solar cells' short circuit current density and open circuit voltage were greatly improved. It has been demonstrated that adding Ti to p-CuO/n-Si solar cells enhances their photovoltaic performance. 相似文献