射线探测用碲锌镉晶体及其器件研究

采用改进的布里奇曼(B ridgm an)方法进行锌组分为0.15碲锌镉(Cd0.85Zn0.15Te)晶体的生长。通过严格控制晶体生长过程中Cd的蒸气分压,使得所生长的碲锌镉晶体在结晶质量方面达到了较好的水平。对其性能进行测试,红外透射比T>60%、沉积相密度<1×104/cm2、位错腐蚀坑密度DEPD<6×104/cm2、X射线衍射双晶回摆曲线半峰全宽FWHM<20 arcsec、电阻率ρ>1010Ω.cm。利用所生长的晶体初步制作了平面型单元碲锌镉射线探测器,所用晶体的尺寸为5 mm×5 mm×2.5 mm,制成的探测器在室温下对125I和241Am放射源进行了探测测量。对125I放射源,探测出了强度为74.5%的27.5 keV的γ射线特征峰,不能仔细分辨出强度为39.8%的27.2 keV的γ射线特征结构;对241Am放射源,探测出了59.5 keV的γ射线特征峰,分辨率优于6 keV,半峰全宽FWHM<10%,同时还能检测出Te、Cd的X射线逃逸的混合峰以及241Am低能Te-K系、Np-L系的两个X射线特征峰。     

Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates

ZnO is a wide direct bandgap (Eg=3.37 eV at room temperature) II-VI compound semiconductor of wurtzite structure (a = 3.249 ? c = 5.207 ?. Compared to GaN and ZnS, ZnO has a larger exciton binding energy, ~60 meV (cf. ~25 meV for GaN and ~40 meV for ZnS), which is advantageous to realizing low-threshold excitonic lasers. Since optically pumped UV lasing of ZnO at room temperature was reported in 1997[1], much attention has been paid to the crystal quality improvement and p-type conduc…     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.     

Study of the microstructural transformations of borate glass and barium metaborate crystals induced by femtosecond laser

This paper describes the microstructural transformations of borate glass and barium metaborate crystals induced by femtosecond laser. Such structural transformations were verified by Raman spectroscopy. The borate glass is transformed into low temperature (LT) phase of barium metaborate (BaB_2O_4) crystals after being irradiated for 10 min by a femtosecond laser. In addition, after 20 min of irradiation, high temperature (HT) phase of BaB_2O_4 crystals is also produced. Further studies demonstrate that LT phase BaB_2O_4 crystals are formed in the HT phase BaB_2O_4 crystals after femtosecond laser irradiation for 10 s.     

Simultaneous Determination of the Content of Iron and Zinc by the Spectral Correction Technique with the Use of Dibromo-o-Nitrophenylfluorone

Reactions between Fe(II) and dibromo-o-nitrophenylfluorone (DBNPF) and also between Zn(II) and DBNPF are sensitive at pH 9 in the presence of Triton X-100. The simultaneous determination of the Fe and Zn content by the spectral correction technique is shown. For analysis of water, plant, and hair samples, the reaction is selective in the presence of triethanolamine and thiourea. The recovery of Fe and Zn is between 88 and 108% and between 90.5 and 107%, and their relative standard deviation is less than 10 and 5.9%, respectively. The method makes it possible to carry out analysis of the solutions of two complexes and easily determine their characteristic constants such as the composition ratio, molar extinction ratio (), and stepwise stability constant (K).     

Fabrication of surface‐enhanced Raman scattering‐active ZnO/Ag composite microspheres

We show in this paper how zinc oxide (ZnO)/silver (Ag) composite microspheres can be prepared by the reduction of Ag(NH₃)₂⁺ with the reducing agent formaldehyde in aqueous solution on the surface of ZnO microspheres. During the preparation, Sn²⁺ was absorbed on the surface of ZnO microspheres for sensitization and activation, and then Ag(NH₃)₂⁺ was reduced to Ag nanoparticles by the reducing agent to obtain ZnO/Ag composite microspheres. SEM and TEM images revealed silver nanoparticles with a diameter ranging from tens to 100 nm. X‐Ray photoelectron spectra (XPS), X‐ray diffraction (XRD) patterns and UV‐vis spectra were used to characterize the structure of the ZnO/Ag composite microspheres. The origin of the surface‐enhanced Raman scattering properties was traced to the surface of the ZnO/Ag composite microspheres. The enhancement factor was estimated in detail, and the enhancement mechanism for the SERS effect was also investigated. Copyright © 2007 John Wiley & Sons, Ltd.     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

开链冠醚Schiff碱-锌配合物的合成与表征及其PL和EL特性

合成了一种含萘酚基的开链冠醚Schiff碱-锌配合物ZnL（其中配体化合物H2L是N,N’-双（2-羟基-1-萘亚甲基）03,6-二氧杂-1,8-三甘醇二胺）。通过元素分析、红外光谱、差热-热重分析、紫外吸收光谱、荧光光谱和循环伏安法对其结构和性质进行了表征,并成功地制备了基于该材料的电致发光器件。结果表明,ZnL配合物的溶液或固体薄膜在385nm紫外光激发下发光峰为455nm,电致发光器件的最大亮度达到650cd／m^2,在电压为9．5V左右,最大效率达到0．63cd／A。     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.     

生长温度对纳米氧化锌场发射性能的影响

采用锌粉和银粉为蒸发源,用热蒸发法不同温度下制备了四针状纳米氧化锌,并以单独的锌粉做对照。采用扫描电子显微镜(SEM)观察其形貌,X射线衍射(XRD)谱表征其晶体结构。采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。结果表明较高温度制备的氧化锌具有较好的场致发射性能;掺杂银粉的蒸发源制备的样品的发射性能明显优于没有掺杂银粉的样品。实验证明ZnO是一种优良的场致发射冷阴极材料,在真空电子方面具有广阔的应用前景。