Investigating the generation of ferrous sulfide nanoparticles in the produced fluid after acidizing oil wells and its influence on emulsifying stability between oil and water

Studies show that after acidizing operation of oil wells using the alkali/surfactant/polymer (ASP) flooding technology, the produced fluid is emulsified. Since the produced emulsion is stable, it affects the oil–water separation performance. In order to analyze the generation of stable emulsion in the produced fluid after acidizing an oil well, innovative separation experiments were carried out on real oil wells. During the experiments, solid particles in the middle layer of the emulsifying system in the produced fluid after acidizing ASP flooding were extracted and characterized. The generation of the stable emulsifying system in the produced fluid was studied through stability experiments and molecular dynamics simulations. The results showed that the synergistic effect of ferrous sulfide nanoparticles and surfactants was the fundamental reason for the strong emulsifying stability of the produced liquid after acidizing of the ternary composite system. The generation of ferrous sulfide solid particles mainly included two steps. First, sulfate reducing bacteria in injected water by ASP flooding reacted with sulfate in formation water to form hydrogen sulfide. Then, the hydrogen sulfide reacted with iron metal in oil wells and casing of wellbore to form ferrous sulfide particles. It was found that surfactants are adsorbed on the surface of ferrous sulfide nanoparticles. Subsequently, the control ability of surfactant on oil and water phases in the liquid film was enhanced. The performed analyses demonstrate that the adsorption of solid particles to the oil phase was enhanced, while the free motion of molecules in the oil phase at the liquid film position was weakened. The strength of the interfacial film between oil and water was further increased by the synergistic effect of ferrous sulfide nanoparticles and surfactant. The present study is expected to provide a guideline for a better understanding of the efficient treatment of produced fluids in ASP flooding.     

First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices

Using two versions of the first principles full potential linear muffin-tin orbitals method (FPLMTO) which enable an accurate treatment of the interstitial regions, the electronic and optical properties of (110) growth axis Si/SiGe superlattices are investigated. A comparative study with (001) growth axis superlattices is made. In particular, it is found that the bottom of the conduction band (CB) is closer to Γ$\Gamma$ in the (110) system but the optical activity is not enhanced. Furthermore, the absorption spectra of the superlattices are calculated and are found to be quite different from those of bulk Si and Ge but fairly close to their average.     

An efficient splitting technique for two‐layer shallow‐water model

We consider the numerical approximation of the weak solutions of the two‐layer shallow‐water equations. The model under consideration is made of two usual one‐layer shallow‐water model coupled by nonconservative products. Because of the nonconservative products of the system, which couple both one‐layer shallow‐water subsystems, the usual numerical methods have to consider the full model. Of course, uncoupled numerical techniques, just involving finite volume schemes for the basic shallow‐water equations, are very attractive since they are very easy to implement and they are costless. Recently, a stable layer splitting technique was introduced [Bouchut and Morales de Luna, M2AN Math Model Numer Anal 42 (2008), 683–698]. In the same spirit, we exhibit new splitting technique, which is proved to be well balanced and non‐negative preserving. The main benefit issuing from the here derived uncoupled method is the ability to correctly approximate the solution of very severe benchmarks. © 2014 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 31: 1396–1423, 2015     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

正切平方势单量子阱的本征值和本征函数

鉴于“方形”势阱描述量子阱中的电子运动行为过于简单、过于理想,引入了正切平方势来代替,使结果得到了改善。在量子力学框架内,利用正切平方势把电子的Schrdinger方程化为超几何方程,利用系统参数和超几何函数严格地求解了电子的本征值和本征函数,并以Ga_1-xAl_xAs-GaAs-Ga_1-xAl_xAs量子阱为例计算了电子的能级和能级之间的跃迁。结果表明,电子在量子阱中的能量是量子化的,而相邻能级之间的跃迁给出与实验进一步符合的结果。     

页岩油水平井多段压裂裂缝高度扩展试验

针对吉木萨尔凹陷芦草沟组页岩油储层压裂垂向改造程度低的问题,基于真三轴水力压裂模拟试验研究CO2与胍胶复合压裂相比于常规水基和超临界CO2压裂缝高扩展的优势.创新性建立一套针对天然页岩的水平井多段压裂模拟试验方法,并通过试样剖分、CT扫描和声发射监测等方法综合确定多段压裂裂缝形态和破裂机制.结果表明:低黏度滑溜水和超临...     

Laser control of magneto-polaron in transition metal dichalcogenides triangular quantum well

We study the dynamic of magneto-polaron condensate in monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) materials of 2H types in triangular quantum well potential. Within both the quantum mechanical Schrödinger approach (QMSA) and the improved Wigner-Brillouin theory (IWBT), Landau energies levels (LELs) are derived. We have shown that the magneto-polaron condensation is enhanced in monolayer MoSe₂ compared to MoS₂, WS₂ and WSe₂. We derive various levels by increasing a magnetic field and laser parameter. We show that the quantum confinement lifts the degeneracy of the Landau levels (LLs) resulting in an anticrossing and crossing. The dephasing effect due to the quantum well potential's parameter plays an important role in the magneto-polaron energy corrections, which are also affected by the amplitude of the laser field. The system presents Stückelberg oscillations which is important for practical applications.