Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures

In_xGa${}_{1?x}$N/ZnSnN₂ quantum well structures are studied in terms of a binding energy of a donor atom. 1s and $2p_{\pm }$ impurity states are considered. The Schrödinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-Å In_0.3Ga_0.7N/ZnSnN₂ quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold.     

Ground state solutions for Klein–Gordon–Maxwell system with steep potential well

In this paper, we study the following Klein–Gordon–Maxwell system $\left\{\begin{array}{c}-\Delta u+(\lambda a\left(x\right)+1)u-(2\omega +\varphi )\varphi u=f(x,u),\mathrm{in}{\mathbb{R}}^3,\hfill \\ -\Delta \varphi =-(\omega +\varphi )u^2,\mathrm{in}{\mathbb{R}}^3.\hfill \end{array}\right.$Using variational methods, we obtain the existence of ground state solutions under some appropriate assumptions on $a$ and $f$.     

Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR

In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field.     

Well‐posedness of fractional integro‐differential equations in vector‐valued functional spaces

We study the well‐posedness of the fractional differential equations with infinite delay on Lebesgue–Bochner spaces and Besov spaces , where A and B are closed linear operators on a Banach space X satisfying ,  and . Under suitable assumptions on the kernels a and b, we completely characterize the well‐posedness of in the above vector‐valued function spaces on by using known operator‐valued Fourier multiplier theorems. We also give concrete examples where our abstract results may be applied.     

Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Resonant tunneling quantum structures consist of asymmetric wells and barriers have been investigated to find their optimized geometrical parameters and potential profile by the numerical calculations. The results show that the widths and the depths of the asymmetric wells have a significant effect on the transmission coefficient and the dwell time. The properties exhibited in this work may establish guidance to the device applications.     

A tunable dual-narrowband band-pass filter using plasma quantum well structure

A tunable dual-narrowband pass-band filter is designed. A one-dimensional photonic crystal(1D PC) is comprised of alternate dielectric layer and vacuum layer. Two quantum wells(QWs) as defects can be constructed by sandwiching two plasma slabs symmetrically in the 1D PC, and a dual-narrowband pass-band filter is formed. The conventional finitedifference time-domain(FDTD) method and piecewise linear current density recursive convolution(PLCDRC)–FDTD method are applied to the dielectric and plasma, respectively. The simulation results illustrate that the dual-narrowband frequencies can be tuned by changing the plasma frequency. The pass band interval and the half-power bandwidths(-3-dB band widths) are related to the space interval between two QWs.     

高密度电法在WLQC工地废弃水井探测中的应用

在WLQC工地建设工程中,利用高密度电法对工地废弃水井进行探测,运用合理观测方式,结合高密度反演软件处理解释,查明了废弃水井的空间范围及其对施工的影响,取得了良好的地质效果.通过探测及时排除了给施工单位人员、设备带来的安全隐患并且为建设单位的设计提供了依据.实验结果表明在遇到水泥预制,场地勘探空间受到极大限制等施工工地的问题的勘测工作中,高密度电法具有成本低、效率高、效果好、显示直观等特点,不失为一种值得大力推广的好方法.     

一类非线性四阶波动方程初边值问题解的有限时间爆破

研究四阶带有阻尼项的非线性波动方程的解的初边值问题,利用位势井方法,证明了当初值满足一定条件时解发生爆破.将有关该系统爆破性质的研究结果一般化,通过证明得到了该系统较好的性质.