Corrosive behavior of chromium carbide-based films formed on steel using a filtered cathodic vacuum arc system

The formation of chromium carbide-based hard-coatings on steels using a 90°-bend filtered cathodic vacuum arc (FCVA) has extensive industrial applications; such coatings are free of macroparticles and exhibit excellent characteristics. In this investigation, a working pressure of C₂H₂/Ar was adopted to synthesize amorphous chromium carbide film (a-C:Cr) and crystalline chromium carbide film (cryst-Cr₃C₂) from a Cr target (99.95%) at 500 °C under a substrate voltage of −50 V. The corrosion behavior of a-C:Cr coated on steel (a-C:Cr/steel) and cryst-Cr₃C₂ coated on steel (cryst-Cr₃C₂/steel) were compared in terms of open-circuit potentials (OCP) and polarization resistance (R_p) in an aerated 3.5 wt% NaCl aqueous solution, as determined by electrochemical impedance spectroscopy (EIS). The XRD results indicated that the transformation of a-C:Cr to cryst-Cr₃C₂ is distinct as the working pressure declines from 1.2 × 10⁻² to 2.9 × 10⁻³ Torr. The OCP of a-C:Cr/steel and cryst-Cr₃C₂/steel resemble each other and both assembly are nobler than uncoated steel. The R_p of the coatings exceeds that of the uncoated steel. The SEM observation and the EIS results demonstrate that the cryst-Cr₃C₂/steel more effectively isolates the defects than dose a-C:Cr/steel.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

高性能微通道板除气过程中电阻的变化

比较了高性能微通道板和标准型微通道板在经过相同或类似制管工艺处理前、后电阻的变化，测定了高性能微通道板分别在真空烘烤和2个不同阶段电子清刷后电阻随电压及温度的变化关系。实验结果表明：高性能微通道板的热稳定性优于标准型微通道板，其电阻温度系数为-0.007/℃；经过第二阶段清刷后，电阻随电压的变化缓慢，电压系数为-1.11×10^-4V^-1；用这种材料和工艺制作的低电阻、大动态范围、高稳定性微通道板可满足特种探测器的需求。     

双模压缩光场作用下电子干涉器件中电子密度的关联

通过对双模压缩态光场和两个电子干涉器件相互作用的研究，得到了两个电子干涉器件中电子密度的关联，并采用归一化关联函数来描述这种关联，发现通过选择合适的初始相位差，量子关联可以很好地从双模压缩态光场转移到电子。     

用真空温压技术制备纳米金属铜块体材料

采用自悬浮-真空温压法制备纳米金属Cu块体材料。通过X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、正电子湮没(PAS)实验、HMV-2型显微硬度计和用Arechimedes原理等测试手段研究压制压力、保压时间、温度等工艺参数对样品密度的影响;考察其热稳定性和微结构。研究结果表明:纳米金属Cu块体材料的密度随压制压力、保压时间和温度的增加而提高,最高相对密度为96.15%;纳米金属Cu块体材料具有较好的热稳定性;在1.5 GPa和200℃压制的样品的平均晶粒度为25.3 nm,微应变为0.047%。     

苹果香气成份GC分析样品制备方法的研究

通过对苹果香气成分的离析方法（顶空法、蒸馏法、萃取法等）进行对比性研究，确定改进的Ｌｉｋｅｎｓ＆Ｎｉｃｋｅｒｓｏｎ蒸馏萃取法适合于普通毛细管气相色谱仪的分析条件，是一种良好的方法     

夸克胶子混合真空凝聚和Dyson-Schwinger方程

基于夸克传播子的Dyson-Schwinger方程，计算了夸克胶子混合真空凝聚和夸克真空凝聚. 这些凝聚不仅联系着夸克在真空态中的虚度，而且也表征了真空中夸克分布的空间宽度. 真空凝聚的存在直接反映着QCD真空的非微扰结构. 计算表明：上夸克与下夸克的虚度为λ²_u,d=0.7GeV²，奇异夸克的虚度为λ²_s=1.6GeV². 这些结果与许多用完全不同的方法得到的结果一致.     

2+1维SU(2)格点规范场胶球波函数的高阶RPA计算

采用无规相近似(RPA)耦合集团展开方法求解薛定谔本征值方程，计算高阶胶球波函数. 在计算中，用空心Wilson圈图作为试探波函数，对特殊Wilson圈图作近似处理，计算出的2+1维SU(2)格点规范场的六阶和七阶胶球波函数的μ0F和μ2F及相关参数z 在弱耦合区(β=4.8-9.6)出现较好的标度行为，七阶真空能量在整个区域(β=0.8-8.0)与六阶真空能量一致.     

三原子直线分子的测量

对于三个原子组成的直线分子哈密顿系统，对角化后等效为两个相互独立的量子谐振子和一个自由粒子，应用热场动力学理论，得到了有限温度下测量坐标和动量的量子涨落。