Thermal properties and stability of lithium titanophosphate glasses

DTA was used to study thermal properties and thermal stability of (50-x)Li₂O-xTiO₂-50P₂O₅ (x=0–10 mol%) and 45Li₂Ot-yTiO₂-(55-y)P₂O₅ (y=5–20 mol%) glasses. The addition of TiO₂ to lithium phosphate glasses results in a non-linear increase of glass transition temperature. All prepared glasses crystallize under heating within the temperature range of 400–540°C. The lowest tendency towards crystallization have the glasses with x=7.5 and y=10 mol% TiO₂. X-ray diffraction analysis showed that major compounds formed by annealing of the glasses were LiPO₃, Li₄ P₂O₇, TiP₂O₇ and NASICON-type LiTi₂(PO₄)₃. DTA results also indicated that the maximum of nucleation rate for 45Li₂O-5TiO₂-50P₂O₅ glass is close to the glass transition temperature.     

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant “low-k” organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from > 7 to < 3 and from 2.5 to 1 g/cm³ respectively. We show that decreases in mass density and dielectric constant are accompanied by both an increase in terminal SiH_x and CH_x bonding and a decrease in SiC network bonding. At densities of 1.85 g/cm³, the concentration of terminal SiH_x bonding peaks and subsequent hydrogen incorporation are achieved predominantly via terminal CH₃ groups. Low-k a-SiC:H films with k < 3.5 and density < 1.3 g/cm³ can be achieved via incorporating larger organic phenyl groups but result in non-stoichiometric carbon rich films. Electron beam curing of these lower density a-SiC:H films results in volatilization of the phenyl groups leaving behind nanoporous regions and production of some CCC chain linkages in the network.     

Synthesis of TiO2 nanorings and nanorods on TCO substrate by potentiostatic anodization of titanium powder

Various TiO₂ nanostructures, such as nanorings, nanorods were synthesized via potentiostatic anodization of titanium powder under different conditions. The morphology of the obtained TiO₂ nanostructures can be easily tuned by varying applied voltage. The crystal structure, compositional information and morphological structures were characterized by X‐ray diffraction (XRD), X‐ray photoelectron spectra (XPS) and field emission scanning electronic microscopy (FESEM). XRD and XPS analysis confirmed the anodization products were TiO₂. A possible formation mechanism was suggested on the basis of the shape evolution of TiO₂ nanostructures observed by FESEM. The results revealed that the applied voltage played an important role in the formation of various nanostructures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural investigation and electronic band transitions of nanostructured TiO2 thin films

Titanium dioxide (TiO₂) thin film was deposited on n‐Si (100) substrate by reactive DC magnetron sputtering system at 250 °C temperature. The deposited film was thermally treated for 3 h in the range of 400‐1000 °C by conventional thermal annealing (CTA) in air atmosphere. The effects of the annealing temperature on the structural and morphological properties of the films were investigated by X‐ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD measurements show that the rutile phase is the dominant crystalline phase for the film annealed at 800 °C. According to AFM results, the increased grain sizes indicate that the annealing improves the crystalline quality of the TiO₂ film. In addition, the formation of the interfacial SiO₂ layer between TiO₂ film and Si substrate was evaluated by the transmittance spectra obtained with FTIR spectrometer. The electronic band transitions of as‐deposited and annealed films were also studied by using photoluminescence (PL) spectroscopy at room temperature. The results show that the dislocation density and microstrain in the film were decreased by increasing annealing temperature for both anatase and rutile phases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermoelectric properties of homologous p- and n-type boron-rich borides

Thermoelectric properties of a series of layered homologous rare-earth boron carbonitrides: HoB₁₇CN, REB₂₂C₂N (RE=Y,Er,Lu), and YB_28.5C₄, were investigated. Samples for measurements were prepared in the form of hot pressed or isostatically pressed and annealed single phase polycrystalline powder. This series of compounds has structures where B₆ octahedral and rare-earth atomic layers reside between an increasing number of B₁₂ icosahedral and C-B-C chain layers, and has structural analogy to boron carbide. Interestingly, a variation from p-type thermoelectric behavior for YB_28.5C₄ to n-type for REB₂₂C₂N and HoB₁₇CN was observed. This is the first non-doped compound among the boron-rich borides in which n-type thermoelectric behavior has been observed. Similar to other boron cluster compounds low values of the thermal conductivity κ were found. The origins of the low κ in such compounds has not been fully explained, but comparison among the homologous series shows that the thermal conductivity appears to increase as the number of boron cluster layers increases. This result indicates that the heavy rare-earth atoms residing in the boron matrix may play a role in depressing thermal conductivity in addition to other features common to boron cluster compounds. Although the absolute values of the determined figures of merit ZT are not large for hot pressed samples, the Seebeck coefficients and power factors for both n-type and p-type in this series show an increase at temperatures exceeding 1000 K.     

Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center

The surface optical or Fuchs-Kliewer phonons of the (0 0 1) surface of 3C-SiC and the Si-terminated (0 0 0 1) surfaces of 4H- and 6H-SiC have been investigated with high resolution electron energy loss spectroscopy (HREELS). For each of the SiC polytypes the frequency of the surface optical phonon changes with surface reconstruction, indicating subtle differences in the static polarization at differently reconstructed surfaces. Due to their anisotropy, hexagonal surfaces exhibit a second, much weaker Fuchs-Kliewer mode. For all surfaces under examination, a linear dispersion of the Fuchs-Kliewer mode frequency has been found for wave vectors close to the -point. This dispersion can be explained by dynamical dipole coupling between atomic oscillators at the surface of the highly polar silicon carbide.     

Improvement of cubic silicon carbide crystals grown from solution

Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and 3 mm long 3C–SiC crystal. It is grown on a (0001) 2 off, 6H–SiC seed and has 111-orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the consideration of μ-Raman spectra collected at room temperature on a large number of samples.     

块体非晶合金的室温力学行为研究新进展

块体非晶合金由于具有优异的力学性能、物理性能、化学性能,从而得到广泛研究.本文综述了块体非晶合金室温力学行为研究的最新进展,详细介绍了块体非晶合金的室温塑性、屈服行为以及变性机制.     

碳化锆/锆涂层炭纤维的制备及其拉伸性能研究

在一定反应温度范围内以熔盐为介质通过炭纤维与金属锆反应制备出碳化锆/锆涂层炭纤维,并在反应温度为800℃时,研究反应时间对碳化锆/锆涂层炭纤维表面相组成、形貌及其拉伸性能的影响。结果表明,800℃可制备均匀致密的碳化锆/锆涂层;且随着反应时间的延长,碳化锆/锆涂层厚度略有增加;涂层后炭纤维的拉伸强度和拉伸模量比原炭纤维的相应值略有减小。