F-P腔不同扫频段透射谱锁频精度实验

针对窄线宽激光器输出谱线窄,难以被锁定的情况,利用F-P腔特有极窄线宽、高精细度特性对激光器谱线线宽实施压窄及频率锁定。通过设计实验方案并搭建锁频测试平台,利用F-P腔外部光反馈将窄线宽半导体激光器线宽压窄来提高锁频精度。通过监测正弦波调制下F-P腔对于4种不同直流电压下激光PZT扫频段的透射谱线,并对其分别进行解调和锁频精度测试,得到直流高压放大器电压为73 V时对窄线宽激光器进行扫频,激光器反馈锁频精度最高可达1.5 MHz。     

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric

Gd-doped HfO2 has drawn worldwide interest for its interesting features.It is considered to be a suitable material for N-type metal-oxide-semiconductor(MOS)devices due to a negative flatband voltage(Vfb)shift caused by the Gd doping.In this work,an anomalous positive shift was observed when Gd was doped into HfO2.The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors,such as Fermi level pinning(FLP),a dipole at the dielectric/SiO2interface,fixed interfacial charge,and bulk charge,on Vfb.It was found that the FLP and interfacial dipole could make Vfbnegatively shifted,which is in agreement with the conventional dipole theory.The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfbshift.     

Comparative investigation of resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air

A comparative investigation of resistance and ability to trigger high voltage (HV) discharge for single filament (SF) and multiple filaments (MF) has been carried out. The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance, but this is not the case for the MF. The MF's resistance is much smaller than SF's. However, the MF shows a bit higher HV breakdown threshold than the SF. The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

低渗透煤层气水两相非线性渗流数学模型及计算分析

 在考虑煤层气的解吸和扩散效应及启动压力梯度的基础上,对低渗透煤层气藏流体输运特性进行分析,建立了低渗透煤层气水两相非线性渗流数学模型,推导出非线性渗流阶段气水两相的控制方程组。通过实例计算表明,液相拟启动压力梯度从0.001MPa/m增加至0.007MPa/m,煤层产气峰值下降约15%;不考虑启动压力梯度时的产气峰值量要比液相拟启动压力梯度为0.001MPa/m的产气峰值提升约7%。因此启动压力梯度的存在阻碍了裂隙中流体的流动,对煤层气开发影响较大。     

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

基于相似度函数的上肢关节点改进阈值滤波方法及其应用

针对视觉传感器受自身硬件条件及环境扰动的影响,采集到的关节点运动数据往往存在异常值的问题,为了提高Kinect获取的上肢关节点运动数据的准确性,提出了一种基于相似度函数的上肢关节点改进阈值滤波方法,来减小异常值对运动追踪的影响.基于前景轮廓相似度、肢体比例相似度和分布相似度构建了关节点相似度函数,将其用于评估截取的每帧...     

普光气田地层水启动压力梯度实验研究

针对现有的地层水启动压力梯度计算模型计算结果差异大的问题,选取四川盆地普光气田早三叠纪飞仙关组超深层碳酸盐岩储层标准岩心,开展了储层温度条件下的地层水启动压力梯度实验测试,根据实验测试结果建立了地层水启动压力梯度计算模型,对比分析了不同地层水启动压力梯度计算模型的计算结果,分析了影响地层水启动压力梯度的主要因素,以普光气田为例进行了实例计算和分析。结果表明:地层水启动压力梯度随渗透率的降低而增大,在渗透率相对较低时,地层水启动压力梯度随着渗透率的降低急剧增大;地层温度影响地层水黏度,从而改变地层水在细小孔道中流动时的非牛顿特征,进而影响地层水启动压力梯度的大小;储层渗透率和地层水黏度是影响地层水启动压力梯度大小的主要因素;普光气田Ⅱ、Ⅲ类储层地层水启动压力梯度较大,要准确描述气藏水侵规律,需考虑储层的地层水启动压力梯度。     

太赫兹量子级联激光器光束特性分析

用有限元法计算太赫兹量子级联激光器激光模式的阈值增益.结果表明:接触层厚度和掺杂浓度对阈值增益的影响远远大于波导宽度和激射波长;接触层厚度较小(大)和掺杂浓度较低(高)时,TM₁(TM₀)模的阈值增益较小.在此基础上,用矢量衍射理论分析岀射光束的远场特性,得到光束的远场光斑基本是椭圆;x方向的远场散射角随波导宽度或激射波长的增加分别线性减小或增加,尽管对应的接触层厚度和掺杂浓度不同,但TM₀和TM₁模x方向的远场散射角相同;另外,还得到y方向远场散射角不受波导宽度或少受激射波长的影响.在阈值增益和光束质量方面,TM₁模都优于TM₀模.