相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

椭圆偏振法研究四方氧化锆对Zr-Sn-Nb合金氧化膜耐腐蚀性能的影响

将经过不同热处理的Zr-Sn-Nb合金样品放在350℃、16．8mol／LPa、0．01mol／LLiOH溶液的高压釜中进行腐蚀。用椭圆偏振法研究氧化膜中的四方氧化锆，发现经过580℃／冷轧／500℃处理的样品在腐蚀42天和190天后氧化膜中的四方氧化锆比其它样品的多。四方氧化锆是影响合金耐腐蚀性能的一个主要因素，四方氧化锆的形成有利于提高合金的耐腐蚀性能。     

Polarized Emission of Molecular Film With Lanthanide (Ⅲ) Complex

1 Results In the coordination system by using complexation with organic ligand, the ff emission of lanthanide(Ⅲ) (Ln(Ⅲ)) is induced the excitation energy transfer form the organic chromophore under the light-irradiation. However, there are not so much number of reports to discuss the energy relaxation mechanism in such complexes with Ln(Ⅲ). Recently, we succeeded firstly to estimate the rate constant of the energy transfer between the ligand and Ln(Ⅲ) in Pr(Ⅲ)-phenanthroline analogs[1]. Here, we will di...     

Experimental investigation of time-dependent cavitation in an oscillatory squeeze film

The occurrence of time-dependent cavitation and tensile stress in an oscillatory oil squeeze film were investigated experimentally. The test apparatus was a simple thrust bearing consisting of two parallel circular plates separated by a thin viscous oil film. During the test, one plate was at rest while the other (transparent) oscillated in a direction normal to its surface. This test configuration was chosen to avoid the rotational motion and complicated geometry of a squeeze film journal bearing. The frequency of oscillation was in the range of 5 to 50 Hz and was controlled by an electro-magnetic exciter. The process of cavity formation and its subsequent development was recorded by a high-speed video camera. Concomitant pressure in the oil film was measured both within and without the cavitation region. It was found that both tensile stress and cavities existed in a squeeze film under certain working conditions.     

蓝宝石R面上ZnO薄膜的NH3掺杂研究

以NH₃为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH₃流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。     

Diffusion Structural Analysis Study of Titania Films Deposited by Sol-Gel Technique on Silica Glass

The diffusion structural analysis (DSA) was used to characterize microstructure changes of hydrous titania gel films under in situ conditions of heating. TG and DTA were used in order to elucidate the processes controlling the formation of anatase film during heating of hydrous titania gel film. The annealing of porosity and near surface structure defects of the dehydrated titania films was indicated by DSA in the temperature range 255–700°C as the decrease of radon release rate. It was demonstrated that the annealing was enhanced on heating in oxygen in comparison with heating in argon. The DSA experimental results were compared with model curves describing the radon diffusion mobility and the annealing of radon diffusion paths.     

Control of self‐organized low‐dimensional morphology in poly(styrene‐b‐4vinylpyridine)/polystyrene blend thin films

The surface morphologies of poly(styrene‐b‐4vinylpyridine) (PS‐b‐P4VP) diblock copolymer and homopolystyrene (hPS) binary blend thin films were investigated by atomic force microscopy as a function of total volume fraction of PS (?_PS) in the mixture. It was found that when hPS was added into symmetric PS‐b‐P4VP diblock copolymers, the surface morphology of this diblock copolymer was changed to a certain degree. With ?_PS increasing at first, hPS was solubilized into the corresponding domains of block copolymer and formed cylinders. Moreover, the more solubilized the hPS, the more cylinders exist. However, when the limit was reached, excessive hPS tended to separate from the domains independently instead of solubilizing into the corresponding domains any longer, that is, a macrophase separation occurred. A model describing transitions of these morphologies with an increase in ?_PS is proposed. The effect of composition on the phase morphology of blend films when graphite is used as a substrate is also investigated. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3496–3504, 2004     

密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

电子束蒸发制备HfO_2高k薄膜的结构特性

使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数