Performance analysis of an integrated scheme in optical burst switching high-speed networks

A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings.     

一种改进型光可分突发交换性能分析模型

提出了一种改进型光可分突发交换性能分析模型(Modified Optical Composite Burst Switching,MOCBS).该模型考虑了截断剩余造成的影响,通过分析截断概率、平均截断剩余长度,得到截断剩余造成的分组丢弃概率,从而更准确地估计分组丢失率.在此基础上,推导出支持区分服务的POCBS(Prioritized OCBS)性能分析公式.仿真验证了MOCBS的准确性以及POCBS分析公式的有效性.     

面向下一代航电系统的数据块填装性能

结合光分组交换(OPS)网络和光纤通道(FC)技术的优势, 提出一种下一代航电系统组网方案——基于光分组交换网络的光纤通道技术(FC over OPS)。建立了数学仿真模型, 研究了一种数据块填装算法与网络实时性之间的关系, 分析不同的参数如发送带宽、最低效率门限、发送定时的选取对网络实时性的影响。进一步完成硬件原型设计和仿真, 比较了软件仿真与硬件仿真的结果, 并分析该数据块填装算法的性能。     

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy

Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorphous insulators. In this study, through an ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold switching of amorphous NbO₂ accompanies local crystallization. The change in I–V characteristics after electroforming was examined by evaluating the concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO₂. The local crystallization in amorphous NbO₂ was validated by the observed difference in time-of-flight (ToF) between amorphous and crystalline NbO₂. We concluded that the slower ToF of amorphous NbO₂ (a-NbO₂) compared with crystalline NbO₂ (c-NbO₂) is due to the resistivity difference and trap-assisted recombination.     

一种改进的AUVs变结构滑模控制策略研究

针对现有的变结构滑模控制切换面单一性会导致系统状态在原点处收敛缓慢的缺陷,对自主式水下机器人(AUVs)变结构滑模控制设计了折线型的切换面,并且进一步改进实现了速度控制和定点定速控制。改进的切换面由斜率不同的自线段构成,并在拐点处通过S型函数光滑过渡。将切换面的斜率减小到0时,则可以实现速度控制,同时为了消除速度控制的稳态误差,引进了采用能智积分方法的积分项。最后在某AUV上进行仿真实验,结果证实了应用折线型切换面可以减少控制系统的上升时间,提高反应速度;速度控制的稳态误差接近0,并很好地实现定点定速的控制效果。该方法可以有效用于AUVs的控制。     

Tiling solutions for optimal biological sensing

Biological systems, from cells to organisms, must respond to the ever-changing environment in order to survive and function. This is not a simple task given the often random nature of the signals they receive, as well as the intrinsically stochastic, many-body and often self-organized nature of the processes that control their sensing and response and limited resources. Despite a wide range of scales and functions that can be observed in the living world, some common principles that govern the behavior of biological systems emerge. Here I review two examples of very different biological problems: information transmission in gene regulatory networks and diversity of adaptive immune receptor repertoires that protect us from pathogens. I discuss the trade-offs that physical laws impose on these systems and show that the optimal designs of both immune repertoires and gene regulatory networks display similar discrete tiling structures. These solutions rely on locally non-overlapping placements of the responding elements (genes and receptors) that, overall, cover space nearly uniformly.     

Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs

A diode-pumped Nd:YVO₄ laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Optical switching and logic gates with hybrid plasmonic-photonic crystal nanobeam cavities

We propose a hybrid resonance architecture in which a plasmonic element is coupled to a silicon-on-insulator photonic crystal nanobeam cavity operating at telecom wavelengths. It benefits from the combined characteristics of the photonic cavity and the plasmonic element, and exploits the unique properties of Fano resonances resulting from interactions between the continuum and the localized cavity states. As confirmed through 3D time-domain simulations, a strong cavity mode damping by the plasmonic element offers mechanisms of controlling a probe signal propagating in the nanobeam. It makes possible to create optical switching devices and logic gates relying on any optical nonlinear effect.