一种主扫描图象的二进制特征向量动态聚类方法

不同类型的地物,由于辐射光谱分布不同,在多维光谱空间中构成不同的特征向量,这些向量可以用二进制数码表征。本文介绍的动态聚类方法便是一种基于二进制特征向量的非监督分类方法。此方法成功地用于主扫描图象分类.     

原位透射电子显微学进展及应用

文章简要介绍了近年来原位透射电子显微学的进展,并指出,原位透射电子显微技术的发展使得在纳米、原子层次观察样品在力、热、电、磁作用下以及化学反应过程中的微结构演化成为可能。通过研究物质在外界环境作用下的微结构演化规律,揭示其原子结构与物理化学性质的相关性,指导其设计合成和微结构调控,促进新物质的探索和深层次物质结构研究,为解决凝聚态物理学中的具体问题提供了直接、准确和详细的方法。     

GaN HEMT器件结构的研究进展

Ga N高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率,这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后,着重从优化材料结构设计和器件结构设计的角度,阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后,讨论了器件进一步发展的方向。     

Observation of insulating–insulating monoclinic structural transition in macro‐sized VO2 single crystals [Phys. Status Solidi RRL 5, No. 3, R107–R109 (2011)]

In our article, we reported the observation of monoclinic M2 to M1 structural phase transition in VO₂ single crystal near the temperature of ～49 °C. However, the re‐examination of Laue patterns reveals that previously defined monoclinic M1 and M2 phases can be interpreted as monoclinic M2 and triclinic T phases instead. Careful experimental geometry calibration and further refinement of the lattice parameter ratios and angles show that monoclinic M2 and triclinic T phases fit better with the experimental data. On the other hand, our previous misidentification of the insulating phases does NOT affect the conclusions of our article. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of 60Co γ-irradiation on structural and optical properties of thin films of Ga10Se80Hg10

Thin films of Ga₁₀Se₈₀Hg₁₀ have been deposited onto a chemically cleaned Al₂O₃ substrates by thermal evaporation technique under vacuum. The investigated thin films are irradiated by ⁶⁰Co γ-rays in the dose range of 50–150 kGy. X-ray diffraction patterns of the investigated thin films confirm the preferred crystallite growth occurs in the tetragonal phase structure. It also shows, the average crystallite size increases after γ-exposure, which indicates the crystallinity of the material increases after γ-irradiation. These results were further supported by surface morphological analysis carried out by scanning electron microscope and atomic force microscope which also shows the crystallinity of the material increases with increasing the γ-irradiation dose. The optical transmission spectra of the thin films at normal incidence were investigated in the spectral range from 190 to 1100 nm. Using the transmission spectra, the optical constants like refractive index (n) and extinction coefficient (k) were calculated based on Swanepoel’s method. The optical band gap (E_g) was also estimated using Tauc’s extrapolation procedure. The optical analysis shows: the value of optical band gap of investigated thin films decreases and the corresponding absorption coefficient increases continuously with increasing dose of γ-irradiation.     

基于相似测度算法的激光诱导薄膜损伤表面特征研究

鉴于薄膜激光损伤性能评价是增强抗激光红外观察窗口性能的重要保证,给出薄膜在脉冲激光诱导作用下的损伤表面特性及其机理。实验采用YAG脉冲激光器对TiO2薄膜样片进行1-on-1方式的激光诱导。通过CCD采集TiO2薄膜激光辐照前后2幅图像,将这2幅图像进行匹配,建立差异图像测度算法;实验得出TiO2薄膜样片的差异能量测度可判别出损伤情况,即测度值M＜0.1为未发生损伤,0.1＜M＜0.2为轻度损伤,0.2＜M＜0.5为中度损伤,M＞0.5为严重损伤。薄膜样片经过能量密度为0.5 J/cm2的激光辐照后粗糙度明显增大。研究结果表明,采用激光辐照前后图像匹配的测试方法可实现薄膜激光损伤与否的判别。     

基于PN结传感器的数字式温度计实验研究

利用数字电压表单元模块、恒流源、AD620等设计测温实验电路,设计制作出0~100℃的数字温度计,它具有线性度高、热响应速度快、测温精度较高、重量轻、易制作、成本低等优点,可以测量固体、液体和气体的温度,具有广泛的用途。     

高压剪切作用下三水铝石的结构稳定性

利用旋转式金刚石对顶砧压机(RDAC)结合显微激光拉曼光谱和微区X射线衍射,研究了三水铝石(γ-Al(OH)₃)在高压剪切作用下的结构稳定性。常温加压至1.5 GPa,旋转180°后,γ-Al(OH)₃的结构开始转变。初始样品在高波数段的4个羟基伸缩振动峰(3363、3434、3524和3618 cm^-1)相继消失,出现3303和3560 cm^-12个新峰。低波数段拉曼谱强度明显减弱,无非晶态宽峰;Al-O-Al变形振动双峰(568、539 cm^-1)和Al-O伸缩振动肩峰(321和307cm^-1)分别融合为一个振动峰;4个羟基变形振动峰(1052、1018、981和922 cm^-1)仍然可见。继续加压至3.5 GPa,旋转360°后卸至常压,高波数段新出现的两个羟基伸缩振动峰、原Al-O-Al变形振动峰和Al-O伸缩振动峰仍然可见。对比准静水压条件下γ-Al(OH)₃高压相的拉曼谱和相转变压力(约2.7 GPa),认为常温高压剪切作用下γ-Al(OH)₃脱羟基生成了H₂O和H₃O^-₂。卸压样品微区的X射线衍射谱进一步揭示,在高压剪切作用下,γ-Al(OH)₃的(OH)-Al-(OH)配位八面体骨架被破坏,沿c轴方向原子叠加的层间距缩小,对称性增强。这种不同于准静水压实验的结构改变来自腔体内压力的不均匀分布(0.5~4.5 GPa)。高压剪切作用下,三水铝石的结构稳定性研究对查明板块冷俯冲带中含水矿物的稳定性,推演俯冲板片的物理化学性质以及板块俯冲的速率具有重要意义。     

Direct visualization of structural defects in 2D semiconductors

Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand.     

基于水平集方法二维模型的软性磨粒两相流流场特性分析方法

两相流场特性分析是软性磨粒流精密加工方法的技术关键. 针对此问题, 利用水平集方法(LSM)结构拓扑变换原理, 建立了描述磨粒流在另一流体中运动变化的二维模型. 该模型中, 用LSM捕捉两相流之间的界面, 从而对两相流的运动情况和相关参数进行模拟仿真, 深入讨论了磨粒流加工机理. 研究表明: 以LSM原理建立的二维模型, 成功地仿真模拟了两相流相变过程; 利用k-ε湍流模型与Preston方程相结合的数值分析方法, 对流道内各区域的速度等流场特性进行讨论, 为软性磨粒流加工提供了前期基础性研究. 关键词： 水平集方法 结构化表面 软性磨粒流 k-ε湍流模型')" href="#">k-ε湍流模型