首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   30701篇
  免费   2036篇
  国内免费   2549篇
化学   1916篇
晶体学   75篇
力学   4146篇
综合类   354篇
数学   9853篇
物理学   3406篇
综合类   15536篇
  2024年   68篇
  2023年   299篇
  2022年   599篇
  2021年   627篇
  2020年   582篇
  2019年   542篇
  2018年   551篇
  2017年   691篇
  2016年   805篇
  2015年   797篇
  2014年   1277篇
  2013年   1492篇
  2012年   1389篇
  2011年   1610篇
  2010年   1398篇
  2009年   1723篇
  2008年   1745篇
  2007年   2163篇
  2006年   1877篇
  2005年   1667篇
  2004年   1436篇
  2003年   1430篇
  2002年   1237篇
  2001年   1089篇
  2000年   1118篇
  1999年   995篇
  1998年   878篇
  1997年   782篇
  1996年   698篇
  1995年   555篇
  1994年   545篇
  1993年   448篇
  1992年   378篇
  1991年   371篇
  1990年   318篇
  1989年   259篇
  1988年   232篇
  1987年   179篇
  1986年   101篇
  1985年   69篇
  1984年   52篇
  1983年   23篇
  1982年   48篇
  1981年   32篇
  1980年   21篇
  1979年   23篇
  1978年   12篇
  1977年   13篇
  1976年   8篇
  1957年   7篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
51.
半导体带电粒子探测器的研制及其在空间物理中的应用   总被引:1,自引:0,他引:1  
阐述了空间辐射环境监测的意义,描述了半导体带电粒子探测器的研制及由其组成的望远镜系统在空间物理中的应用,并给出了用此探测器在卫星上进行地球辐射环境监测、太阳质子事件和地磁暴探测的部分结果.  相似文献   
52.
A locally convex space is said to be a Gateaux differentiability space (GDS)provided every continuous convex function defined on a nonempty convex open subset D of the space is densely Gateaux differentiable in D.This paper shows that the product of a GDS and a family of separable Frechet spaces is a GDS,and that the product of a GDS and an arbitrary locally convex space endowed with the weak topology is a GDS.  相似文献   
53.
给出了Banach空间的一个增算子不动点定理,将这一定理应用到Banach空间的积分-微分方程,给出了一类积分-微分方程的连续可微最大解和连续可微最小解的存在性定理.  相似文献   
54.
We consider the problem of determining the stress distributionin a finite rectangular elastic layer containing a Griffithcrack which is opened by internal shear stress acting alongthe length of the crack. The mode III crack is assumed to belocated in the middle plane of the rectangular layer. The followingtwo problems are considered: (A) the central crack is perpendicularto the two fixed lateral surfaces and parallel to the othertwo stress-free surfaces; (B) all the lateral surfaces of therectangular layer are clamped and the central crack is parallelto the two lateral surfaces. By using Fourier transformations,we reduce the solution of each problem to the solution of dualintegral equations with sine kernels and a weight function whichare solved exactly. Finally, we derive closed-form expressionsfor the stress intensity factor at the tip of the crack andthe numerical values for the stress intensity factor at theedges of the cracks are presented in the form of tables.  相似文献   
55.
应用已建立的关于金属表面吸附层中表面应力的统计热力学理论 ,计算了Au(111)上烷烃硫醇SAMs的表面应力及其与烷烃硫醇链长、吸附覆盖度的定量关系 .计算结果与实验相符 ,较好地解释了Berger等人的实验结果 ,特别是解决了在表面应力符号性质上理论与实验的矛盾 .在表面吸附层应力的多种物理起源中 ,通过底物的分子间作用力有着决定性的贡献 ,揭示了分子的吸附能间接地起着重要作用 .这与阴离子化学吸附体系Cl-/Au(111)的有关研究结果相同 .  相似文献   
56.
关于Banach空间中凸泛函的广义次梯度不等式   总被引:2,自引:0,他引:2  
姚云飞  徐森林 《应用数学》2003,16(3):136-140
本文在前人^[1,2]的基础之上,以凸泛函的次梯度不等式为工具,将Jensen不等式推广到Banach空间中的凸泛函,导出了Banach空间中的Bochner积分型的广义Jensen不等式,给出其在Banach空间概率论中某些应用,从而推广了文献[3—6]的工作.  相似文献   
57.
We examine several interesting relationships and expressions involving Fourier-Feynman transform, convolution product and first variation for functionals in the Fresnel class F(B) of an abstract Wiener space B. We also prove a translation theorem and Parseval's identity for the analytic Feynman integral. This revised version was published online in June 2006 with corrections to the Cover Date.  相似文献   
58.
We investigate some topological properties of a normal functorH introduced earlier by Radul which is some functorial compactification of the Hartman-Mycielski construction HM. We prove that the pair (H X, HMY) is homeomorphic to the pair (Q, σ) for each nondegenerated metrizable compactumX and each denseσ-compact subsetY.  相似文献   
59.
The influence of external uniaxial stress on the different indium-donor complexes in silicon has been studied using the perturbed γγ angular correlation (PAC) method. Such effect of an applied stress is detected by means of the probe atoms situated at different complexes in the sample. The current results showed that the responses of the probes in an extrinsic silicon samples are found to be dissimilar for the same value of stress. Such change in the local environments of the probe atoms could be associated with the various strain field created by the implantations of varied size of impurities. The phosphorous implantation in silicon has even lead to the complete absence of observable effect of the applied stress suggesting significant lose of the elasticity of the sample.  相似文献   
60.
The interaction between multiple incompressible air jets has been studied numerically and experimentally. The numerical predictions have been first validated using experimental data for a single jet configuration. The spreading features of five unequal jets in the configuration of one larger central jet surrounded by four smaller equi‐distant jets, have been studied, for different lateral spacing ratios of 1.5, 2.0 and 2.5 and a central jet Reynolds number of 1.24×105 (corresponding to a Mach number of 0.16). Flow of five equal jets has also been simulated, for the sake of comparison. The jet interactions commence at an axial distance of about 3–4 diameters and complete by an axial distance of about 10 diameters for the lowest spacing ratio of 1.5. For larger spacing ratios, the length required for the start and completion of jet interaction increase. Peripheral jets bend more towards the central jet and merge at a smaller distance, when their sizes are smaller than that of the central jet. The entrainment ratio for multiple jets is higher than that for a single jet. Excellent agreement is observed between the experimental data and theoretical predictions for both mean flow field and turbulent quantities, at regions away from the jet inlet. The potential core length and initial jet development, however, are not predicted very accurately due to differences in the assumed and actual velocity profiles at the jet inlet. Copyright © 2004 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号