网络购物陷阱分析

介绍了网上购物的流程以及网络购物过程中存在的诸多陷阱,并提出了一些解决问题的建议.     

The formation of stars

We review the process of star formation, detailing the theories underlying the stability of molecular clouds and their collapse to protostars, and discussing the empirical evidence and models which inform them. We give emphasis to the role that the magnetic field plays in influencing the stability of molecular clouds and hence the star formation rate. The end result of star formation is a mass function which appears constant within our Galaxy. A relative abundance of low mass stars is observed over high mass stars and most of the stars that do form are found to exist as members of a binary system. The origin of binarity is reviewed as is the discovery, formation and observations of some of the lowest mass stars known, the brown dwarfs.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Charge transport in anodic TiO2 nanotubes studied by terahertz spectroscopy

We report on the photoelectrochemical and terahertz measurements, of the charge transport properties of 1 μm thick self‐organized TiO₂ nanotube layers, prepared by the anodization of titanium. We provide evidence regarding the complexity of electron transport, and dynamics in the nanotubes. Shortly after photoexcitation, charge mobilites in amorphous and crystalline nanotubes are similar, but still lower compared to the bulk anatase. The mobility subsequently decreases due to trapping‐detrapping processes. The recombination rate in anatase nanotubes is much slower than in the amorphous ones, enabling the material to reach an internal photon to electron conversion efficiency exceeding 60%.     

黔南石炭系层序地层格架中碳酸盐岩成岩作用研究

在三级层序地层格架内,从体系域及层序界面的角度对黔南石炭系碳酸盐岩的成岩作用进行了研究.结果表明,与LST有关的成岩作用主要为范围广泛的暴露溶蚀作用;与TST有关的成岩作用主要发育于海底成岩环境和混合水成岩环境,其中后者会随着海平面的不断上升而向大陆迁移;与HST有关的成岩作用主要包括发育于海底成岩环境的胶结作用及高位晚期的大气淡水成岩环境中的溶蚀、胶结和白云石化作用.与Ⅰ型层序界面有关的成岩作用主要有溶蚀作用、胶结作用和白云石化作用,成岩时间长、强度大,并且在黔南可进行区域对比;与Ⅱ型层序界面相关的成岩作用发育规模小,对碳酸盐岩的改造能力较弱.与HST有关的成岩作用及与Ⅰ型层序界面有关的成岩作用对碳酸盐岩储层的改造能力强,往往可形成厚层的白云岩及规模较大的溶蚀孔洞体系,因此,可以作为有利储层追踪对比及预测的有力地质依据之一.     

云南澜沧老厂矿区石炭系划分及原中上石炭统碳酸盐岩时代归属探讨

参照目前的石炭纪和二叠纪地层划分方案,笔者将云南澜沧老厂矿区石炭系与滇西凤庆平掌剖面石炭系进行对比,认为老厂矿区只存在相当于平掌组下段的地层;根据在矿区原中上石炭统"C2 3"碳酸盐岩中所采到的化石面貌显示,该套碳酸盐岩应该属于早二叠世紫松期的沉积,即为下二叠统鱼塘寨组的上段,因而矿区平掌组上段的地层及上石炭统缺失.并重新厘定了老厂矿区的地层层序.     

Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

溅射金膜对氧化铝陶瓷纳秒脉冲真空沿面闪络的影响

研究了溅射金膜对氧化铝陶瓷在真空环境中、纳秒脉冲高电压作用下沿面闪络特性的影响规律.通过对氧化铝陶瓷表面粗糙度、电极接触形式的研究,并结合表面态陷阱、界面能带结构、电荷注入过程的分析,探究了影响氧化铝陶瓷溅射金膜后沿面闪络电压的主要原因.在50 ns/1.2μs脉冲下、电极间距10 mm时,测量各试样的闪络电压60次,取后30次平均值作为稳定的闪络电压.研究结果发现,氧化铝陶瓷在溅射金膜电极试样的闪络电压比直接压接电极试样的闪络电压低,这是因为在不同电极接触方式下,氧化铝陶瓷材料的表面态对真空中的电子发射和材料表层的电荷注入的影响不同所致.