Optimizing the Photovoltaic Performance of Organic Solar Cells for Indoor Light Harvesting

Organic solar cells (OSCs) harvesting indoor light are highly promising for emerging technologies, such as internet of things. Herein, the photovoltaic performance of PTB7-Th:PC₇₁BM solar cells constructed using “optimized (with 1,8-diiodooctane (DIO))” and “non-optimized (without DIO)” processing conditions are compared for indoor and outdoor applications. We find that in comparison to the “optimized” solar cell, the “non-optimized” solar cell is less efficient under simulated solar light illumination (100 mW cm⁻², spectral range 350–1100 nm), owing to significant bimolecular charge carrier recombination losses. However, under simulated indoor illumination (3.28 mW cm⁻², spectral range 400–700 nm), bimolecular recombination losses are effective suppressed, thus the power conversion efficiency of the solar cell without DIO was increased to 14.7 %, higher than that of the solar cell with DIO (14.2 %). These results suggest that the common strategy used to optimize the OSCs could be undesired for indoor OSCs. We demonstrate that the efforts for realizing the desired “morphology” of the active layer for the outdoor OSCs may be unnecessary for indoor OSCs, allowing us to realize high-efficiency indoor OSCs using a non-halogenated solvent.     

Enhanced Crystal Quality of Perovskite via Protonated Graphitic Carbon Nitride Added in Carbon-Based Perovskite Solar Cells

The quality of perovskite layers has a great impact on the performance of perovskite solar cells (PSCs). However, defects and related trap sites are generated inevitably in the solution-processed polycrystalline perovskite films. It is meaningful to reduce and passivate the defect states by incorporating additive into the perovskite layer to improve perovskite crystallization. Here an environmental friendly 2D nanomaterial protonated graphitic carbon nitride (p-g-C\begin{document}$_3$\end{document}N\begin{document}$_4$\end{document}) was successfully synthesized and doped into perovskite layer of carbon-based PSCs. The addition of p-g-C\begin{document}$_3$\end{document}N\begin{document}$_4$\end{document} into perovskite precursor solution not only adjusts nucleation and growth rate of methylammonium lead tri-iodide (MAPbI\begin{document}$_3$\end{document}) crystal for obtaining flat perovskite surface with larger grain size, but also reduces intrinsic defects of perovskite layer. It is found that the p-g-C\begin{document}$_3$\end{document}N\begin{document}$_4$\end{document} locates at the perovskite core, and the active groups -NH\begin{document}$_2$\end{document}/NH\begin{document}$_3$\end{document} and NH have a hydrogen bond strengthening, which effectively passivates electron traps and enhances the crystal quality of perovskite. As a result, a higher power conversion efficiency of 6.61% is achieved, compared with that doped with g-C\begin{document}$_3$\end{document}N\begin{document}$_4$\end{document} (5.93%) and undoped one (4.48%). This work demonstrates a simple method to modify the perovskite film by doping new modified additives and develops a low-cost preparation for carbon-based PSCs.     

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (I_sc = 2.09 A), power conversion efficiency (η = 15%), and quantum efficiency (QE~85%) were achieved at a carrier lifetime of 1 × 10³ μs and a doping concentration of 1 × 10¹⁷ cm⁻³ of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 μm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.     

A Combined Experimental and Computational Study of Chrysanthemin as a Pigment for Dye-Sensitized Solar Cells

The theoretical study of chrysanthemin (cyanidin 3-glucoside) as a pigment for TiO₂-based dye-sensitized solar cells (DSSCs) was performed with the GAUSSSIAN 09 simulation. The electronic spectra of neutral and anionic chrysanthemin molecules were calculated by density functional theory with B3LYP functional and DGDZVP basis set. A better energy level alignment was found for partially deprotonated molecules of chrysanthemin, with the excited photoelectron having enough energy in order to be transferred to the conduction band of TiO₂ semiconductor in DSSCs. In addition, we used the raw aqueous extracts of roselle (Hibiscus sabdariffa) calyces as the source of chrysanthemin and the extracts with various pH values were tested in DSSCs. The extracts and photosensitized semiconductor layers were characterized by UV-Vis spectroscopy, and DSSCs based on raw extracts were characterized by current density-voltage measurements.     

Light-conversion phosphor nanoarchitectonics for improved light harvesting in sensitized solar cells

Photovoltaic technology provides a promising approach for solar energy conversion. One significant factor limiting the efficiency is the poor light harvesting of solar energy, which is related to the mismatch between the energy distribution of photons and the absorption of semiconductor materials or dye. Light-conversion phosphors have been explored as spectral converters to improve the light-harvesting ability in sensitized solar cells. Many progressive studies have been conducted to expand the family of light-conversion phosphors and exploit their application in sensitized solar cells, bringing emerging opportunities to develop commercial sensitized solar cells. In this review, we survey the development of light-conversion phosphors in sensitized solar cells. First, the application and conversion mechanism of light-conversion phosphors, including up-conversion phosphors, down-conversion phosphors, up/down conversion phosphors, and long-lasting phosphors, are summarized in detail. After that, the challenging problems and possible solutions of applying light-conversion phosphors to sensitized solar cells are discussed. The review also highlights some new ideas in the development of sensitized solar cells and the application of light-conversion phosphors in other solar technology.     

A Review of Bacteriochlorophyllides: Chemical Structures and Applications

Generally, bacteriochlorophyllides were responsible for the photosynthesis in bacteria. Seven types of bacteriochlorophyllides have been disclosed. Bacteriochlorophyllides a/b/g could be synthesized from divinyl chlorophyllide a. The other bacteriochlorophyllides c/d/e/f could be synthesized from chlorophyllide a. The chemical structure and synthetic route of bacteriochlorophyllides were summarized in this review. Furthermore, the potential applications of bacteriochlorophyllides in photosensitizers, immunosensors, influence on bacteriochlorophyll aggregation, dye-sensitized solar cell, heme synthesis and for light energy harvesting simulation were discussed.     

V掺杂ZnO透明导电薄膜研究

本文分别采用磁控溅射技术与基于密度泛函理论的平面波赝势方法两种方式, 对高价态差元素V掺杂ZnO薄膜进行研究. 实验研究结果表明: V的掺入并未改变ZnO的生长方式, 所制备的薄膜都呈(002)择优生长; 随着衬底温度增加, VZO薄膜的结晶质量逐步改善, 当衬底温度超过280 ℃时薄膜的结晶质量恶化; 在280 ℃时获得的VZO薄膜电阻率最低3.8×10^-3 Ω·m, 500-2000 nm平均透过率高于85%. 理论模拟结果表明: V以替位形式掺入ZnO六角纤锌矿晶格结构中, 费米能级进入导带, 材料表现出n 型半导体的特性, 导电电子主要由V 3d及O 2p电子轨道提供. 理论计算结果与实验结果的一致性, 表明VZO薄膜具有作为高效Si基薄膜太阳电池透明导电薄膜的应用潜力.     

Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon

Recently, a new carrier‐induced defect has been reported in multi‐crystalline silicon (mc‐Si), and has been shown to be particularly detrimental to the performance of passivated emitter and rear contact (PERC) cells. Under normal conditions, this defect can take years to fully form. This Letter reports on the accelerated formation and subsequent passivation of this carrier‐induced defect through the use of high illumination intensity and elevated temperatures resulting in passivation within minutes. The process was tested on industrial mc‐Si PERC solar cells, where degradation after a 100 hour stability test was suppressed to only 0.1% absolute compared to 2.1% for non‐treated cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Hybrid process for texturization of diamond wire sawn multicrystalline silicon solar cell

Acid texture is difficult for diamond wire sawn (DWS) multicrystalline silicon (mc‐Si) wafer owing to the inhomogeneous distribution of damage layer on the surface. In this article, metal‐assisted chemical etching (MACE) has been selected for introducing a porous seeding layer to induce acid texturing etching. SEM results show that the oval pit structures coverage get obvious improvement even on the smooth areas. Owing to the further improved light absorption ability by second MACE and nanostructure rebuilding (NSR) process, nanostructured DWS mc‐Si solar cell has exhibited a conversion efficiency of 17.96%, which is 0.45% higher than that of DWS wafer with simple acid texture process. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.