The adsorption structure of nonionic surfactant on the sessile mercury electrode in a thin liquid film

In relation to a colloid stability, the adsorption structure of the Stern layer on a sessile mercury electrode in a thin liquid film of nonionic surfactant was investigated by measuring the double layer capacitance. The Stern capacitance on the electrode in the film could be detected when the measuring frequency used was low, for the resistance of the film was not extremely high but of the order of several thousand ohm. It was found that the adsorption structure of nonionic surfactant in the thin liquid film shows a stratification different from that of bulk.     

基于ZIF-8/PAN复合薄膜的柔性丙酮气体传感器

ZIF-8是一种Zn基金属有机骨架材料, 可以吸附丙酮气体从而作为电容式丙酮传感器的气敏材料, 然而ZIF-8的传统使用形式为粉末态, 这导致其不能成为具备柔性的整体, 从而限制了传感器的柔性. 结合包埋种子和二次生长法将ZIF-8与纳米纤维结合成纤维型柔性材料, 并将其作为气敏层制备了柔性电容式丙酮气体传感器. 该传感器在9种常见挥发性有机化合物中表现出良好的选择性, 对250~2000 cm³/m³的丙酮气体具有灵敏的响应、良好的循环响应及长期稳定性. 值得注意的是该柔性传感器不仅在室温下进行传感, 而且在弯折180°的状态下对丙酮气体的响应值与不弯折(0°)状态下几乎一致, 在200次以内的180°弯折-恢复后同样表现出了传感性能的稳定, 表明了其在柔性传感器方面的潜力.     

纳米四氧化三锰温和水相合成及其电容性能

采用温和水相合成法制备出纳米Mn3O4,采用X射线衍射（XRD）、电子能谱（XPS）及透射电子显微镜（TEM）等技术手段对其结构、组成与形貌进行了研究分析;并利用循环伏安（CV）及充放电等电化学测试研究了纳米Mn3O4的电容性能。 结果表明,本实验所制备的纳米Mn3O4为四方相γ-Mn3O4,其粒径大小为40~60 nm;该材料具有良好的电容性能,其比电容值可达270 F/g,且经1000次循环后,其比电容值可达原来的85%。     

纳米CuFe2O4-rGO复合材料的制备及电化学性能

采用溶剂热法成功制备了纳米CuFe₂O₄-rGO复合材料。通过X射线衍射（XRD）,扫描电子显微镜（SEM）、透射电子显微镜（TEM）和电化学工作站对样品的结构、形貌及电容特性进行表征。结果表明,CuFe₂O₄纳米粒子均匀地分散在石墨烯片层间,其中CuFe₂O₄-20% rGO复合材料具有最优的电化学性能,当电流密度1 A·g^-1时,其比电容为1 952.5 F·g^-1,当电流密度为1 A·g^-1时,CuFe₂O₄-20% rGO复合材料经1 000次充放电后的比电容保持率为86.17%。     

Ti/Ru0.1Ti0.1Sn0.8O2电极电容性能研究

低温热分解法制备Ti/Ru0.1Ti0.1Sn0.8O2.XRD表征该样品结构特性,循环伏安和恒流充放电测定电极性能.结果表明,Ti/Ru0.1Ti0.1Sn0.8O2物相属细小的金红石相,在20 mV/s扫速下该电极比电容达933F/g.1000次充放电循环后,比电容衰减23.6﹪,显示良好的循环稳定性和可逆性.     

An impedance study of Ir(210) in HCl solutions

In the Ir(210)/aqueous HCl solution system the “hydrogen adsorption region” is due to the combined process of hydrogen and chloride ion adsorption. We demonstrate that by using impedance spectroscopy the rates of, and charges associated with, hydrogen and chloride adsorption rates can be determined separately. Published in Elektrokhimiya in Russian, 2009, Vol. 45, No. 1, pp. 32–41. Dedicated to the 100th anniversary of B.V. Ershler. The text was submitted by authors in English.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

二氧化锰纳米束超级电容器电极材料制备及分析

由聚苯胺捆绑二氧化锰纳米束作为超级电容器的电极材料,具有良好的赝电容特性。聚苯胺良好的导电性影响二氧化锰纳米束的电化学性能,使其阻抗变小,稳定性增强。     

BaCuO2.5在高压下的状态方程与电学性质

 在活塞-圆筒式高压装置上研究了BaCuO_2.5在4.5 GPa内的p-V关系,给出了其状态方程、Grüneisen参数γ₀、零压体弹模量B₀以及B₀的压力导数B′₀。并在金刚石压砧装置（DAC）上测量了样品的电阻、电容随压力变化的关系,结果表明在0~20 GPa内没有发生相变。