离子辐照对单晶Si中预注入B原子扩散的影响

室温下使用MeV能量级Si,F和O离子对5keV B离子预注入后的n-型单晶Si(100)进行了辐照,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化.结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散.在相同的辐照条件下,Si近表面区域中SiO₂层的存在更有助于限制B原子的瞬间增强扩散.结合卢瑟福沟道背散射分析和DICADA程序计算对实验结果进行了讨论.     

多孔硅-导电聚酯材料复合发光器的光学特性研究

poly-4-dicyanomethylene-4H-cyclopenta[2,1-b:3,4-b]dithiophene monolayer(PCDM)是一种导电,低导带聚酯材料。如果在多孔硅纳米结构中附上一层以自组方式生成的PCDM单分子层,就可以制成能够产生稳定电致发光的器件。发光器的结构是金／PCDM／多孔硅／硅／铝,发光器的电致发光,在白天可用肉眼观察到。有很宽的发光波长,几乎覆盖了整个可见光区域且峰值位于650nm,发光器的面积为1cm^2,启动正向电压在14－30V,电流约300mA。经长时间测试,发光器的稳定性很好,在空气中放置3个月,在输入功率不变的情况下,发光强度也不发生变化,当施以反向电压时,样品仍可以发光而且稳定性较高,在250h内I－V未发生明显变化,扫描电镜图像显示PCDM覆盖的表面要比多孔硅表面平整,而PCDM分子有可能进入到多孔硅纳米孔径当中去,起到了提高发光器稳定性和延长其寿命的作用。     

氢化非晶硅薄膜退火形成的纳米硅及其光致发光

本文报道对氢化非晶硅(a-Si:H)薄膜在600～620℃温度下快速退火10s可以形成纳米晶硅(nc-Si),其Raman散射表明,在所形成的nc-Si在薄膜中的分布是随机的,直径在1.6～15nm范围内,并且在强激光辐照下观察了nc-Si在薄膜中的结晶和生长情况.经退火所形成的nc-Si可见光辐射较弱,不能检测到它们的光致发光(PL),但用氢氟酸腐蚀钝化后则可检测到较强的红PL,并且钝化后的nc-Si在空气中暴露一定的时间后,其辐射光波长产生了蓝移.文中就表面钝化和量子限制对可见光辐射的重要性作了讨论.     

TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method. With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.     

电磁分离降低铝硅合金中铁含量

利用电磁分离法去除铝熔体中初生富铁相,以降低合金中铁含量,并在自制电磁分离实验装置上对A-12%S-1.1F-1.2%Mn熔体进行连续电磁分离,结果表明,经过一次电磁分离使熔体中＞10um的初生富铁相全部去除,铁含量从1．13％降低到0．67％,而处理后的合金重熔凝固后仍然形成大量初生富铁相,再次进行电磁分离处理则使铁含量进一步降低到0．41％,Fe铝熔体中扩散和富铁相的凝固特性决定需要两次以上电磁分离才能有效地降低合金中铁含量,达到了铝硅合金工业生产的需要。     

Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor

The process-related surface state effect is investigated the fabrication of SiC devices, and a nonllnear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is propose, which takes into account the surface related parameters. The frequency-and temperature-dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices     

Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

The effects of incomplete ionization of nitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole--Frenkel, and the effects of the potential on $N^+_\dd$ (the concentration of ionized donors) and $n$ (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole--Frenkel effect and the potential have influence on the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the $C$-$V$ characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the $C$-$V$ characteristics are not significant.     

杯芳冠醚的产生发展及应用

综述了杯芳冠醚的产生、发展及应用研究的新进展,展望了它的工业应用前景。     

配位有机硅在聚醚氨酯中的应用

研究了直接从无定型二氧化硅出发,与乙二醇、氢氧化钾反应,生成高反应活性的五配位硅钾络合物,并以此为原料与2－氯乙醇反应制备双羟基四配位有机硅单体,该单体作为扩连剂再与异氰酸酯基封端的聚醚或聚酯进行低温溶液缩聚反应合成含硅聚醚氨酯,经红外光谱,热重分析,胶渗透色法测定分子量等对合成的物质作了结构表征,热重分析表明该聚合物的耐热性能有所提高,胶渗透色谱法测定分子量高于10万。     

有机硅建筑材料

概述了有机硅在建材工业中作为涂料、助剂、密封胶和防粘剂及防水剂的组成、种类、发展及其应用