An X-ray scattering study of hydrogenated nanocrystalline silicon with varying crystalline fraction

Using X-ray diffraction (XRD) and small angle X-ray scattering (SAXS), we probed the nanostructural features of several PECVD grown nc-Si:H thin films with varying crystalline volume fraction. XRD results of a mixed phase film, 70% a-Si:H and 30% c-Si:H, show these crystallites have a preferred [220] orientation in the growth direction. Another film with approximately 90% c-Si also shows elongated grains, but with a preferred [111] orientation. The SAXS results also show an increase in scattering intensity when compared to the mixed phase material. In the mixed phase material, models show that the electron density fluctuations between the amorphous and crystalline phases are not enough to explain the measured SAXS scattering. Hydrogen clustered at the crystallite boundaries and in void regions of the a-Si phase must be included as well.     

Improvement of cubic silicon carbide crystals grown from solution

Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and 3 mm long 3C–SiC crystal. It is grown on a (0001) 2 off, 6H–SiC seed and has 111-orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the consideration of μ-Raman spectra collected at room temperature on a large number of samples.     

高铝硅氰化渣中铁回收工艺

研究一种处理磁选前高铝硅氰化渣的新工艺。采用复合添加剂焙烧-水浸-磁选工艺对一种铁品位为27.69%(质量分数),SiO2含量为23.9%,Al2O3含量为6.35%的高铝硅氰化渣进行杂质与铁分离的研究。研究结果表明:在最佳焙烧条件下,当水浸温度为60℃,液固比为15:1,水浸时间为5 min,转速为20 r/min,在激磁电流为2 A时,可获得铁品位57.11%,铁的回收率为72.58%的铁精矿。铁的品位和回收率都比单纯的复合添加剂还原焙烧-磁选法所获得的铁精矿的指标高,铁的品位提高了10%左右,回收率提高了30%左右。X线荧光(XRF),X线衍射(XRD)及能谱(EDS)分析研究结果表明:经水浸后,复合添加剂焙烧过程中所产生的可溶性复杂杂质化合物被洗除,不溶性物质经磁选后随之进入非磁性物,实现铁与杂质矿物之间的有效分离。     

二氧化硅增强石英纤维复合材料高温电性能温度特性

运用静电学理论,建立计算二氧化硅增强石英纤维复合材料介电参数的经验模型,实现材料高温介电性能的温度特性模拟,并对材料介电性能的变化规律作出预测.模拟结果与实际结果基本相符,为材料改性提供依据.     

云南德宏硅工业发展问题探析

发展德宏硅工业,必须坚持以科学发展观为指导,从战略高度进行系统思考,充分把握当今世界经济发展的新趋势和国家经济社会发展的新形势给其发展带来的机遇和挑战,清楚认识其自身存在的优势和劣势,并在此基础上结合当地实际情况进行整体谋划,明确其发展定位,理清发展思路,才能促进德宏硅工业的可持续发展。     

含硅二烃基锡(Ⅳ)单羧酸配合物的合成与结构表征

含硅二烃基锡氧化物与相应的取代苯甲酸以1:1的物质量的比进行反应,合成了5个新的含硅二烃基锡单羧酸配合物.通过IR、1HNMR、13C NMR和元素分析对它们的结构进行了表征.生物活性测定的初步结果表明,目标化合物[( Me3SiCH2)2SnOCOC6H4CH3-p]2对肺癌细胞A549和肠癌细胞SW480有较好的体外抑制活性.     

Research progress in degradation mechanism of silicon anode materials for lithium-ion batteries

硅负极材料由于具有非常高的理论比容量,使之成为锂离子电池极具前景的负极替代材料,然而,硅负极材料在充放电过程中会发生非常大的体积变形,这会引起活性材料的破坏失效,严重影响其电化学循环性能,成为制约其在锂离子电池领域广泛应用的最大瓶颈,本文介绍了硅负极材料的不同结构形态及其在充放电过程中电化学性能的退化机理,并综述了充放电过程中的力学性能演化、相关理论分析、数值模拟计算等方面的最新国际研究进展,展望了硅负极材料力学失效方面的研究重点,     

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH₄ to H₂ (R_H). For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH^* (I_Hα/I_SiH^*) at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling R_H, the higher I_Hα/I_SiH^* values are realized. By optimizing the R_H modulation, a uniform crystallinity along the growth direction and a denser μ c-Si:H film can be obtained. However, an excessively high I_Hα/I_SiH^* may damage the interface properties, which is indicated by capacitance-voltage (C-V) measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.