热囚禁离子系统中的两量子比特条件相位门的简单方案

提出了一个实现两离子量子逻辑门的简单方案。本方案使用了两个囚禁于线性阱的三能级离子。本方案不使用振动模作为数据总线,仅需要激光与离子的单个相互作用,因而相互作用时间变短,这点从退相干的角度看是很重要的,而且本方案对振动模的加热不敏感。     

Encapsulation of nanocrystals with responsive gels for spatial optical identification

A tripeptide (β-AspFF) gelator was designed and synthesised using solid-phase peptide synthesis. The as-prepared gelator formed a stable and clear multi-responsive gel in toluene solution. Encapsulating the quantum dots with β-AspFF effectively increased stability and antioxidisation ability which are beneficial for optical identification.     

具有DM相互作用的各向异性XY模型的保真度

采用保真度和保真率的方法研究了具有Dzyaloshinskii-Moriya(DM)相互作用的各向异性XY模型的量子相变.数值研究了保真度和保真率在量子相变点附近的行为,结果表明采用保真度和保真率方法研究该模型的量子相变切实可行.     

Two-dimensional optical micro-scanner on silicon technology

A two-dimensional optical micro-scanner, which main components are two mobile flat and a concave micro-mirrors, is designed such that, all optical components can be fabricated on the same substratum. The optical parameters, which physical dimensions are between 50 and 500 μm, are obtained within the geometrical optics. The optical performance is evaluated by means of the MTF and Rayleigh resolution criteria, given 80% of modulation for a frequency of 8 cycles/mm with a Gaussian source, the resolution limit is 30 μm.     

非晶态Si/SiN_x超晶格材料的发光与非线性光学特性

采用射频磁控反应溅射技术制备了a-Si/SiN_x超晶格材料,并采用热退火技术对材料进行处理。利用吸收光谱和X射线衍射谱对材料进行表征,结果表明Si层呈现非晶态。为研究材料的三阶非线性光学特性,对材料进行Z扫描研究,测量数据表明,材料的非线性吸收为反饱和吸收,材料非线性折射率呈现为负值,该材料的χ(3)的实部为4.57×10~(-17)C(1.39×10~(-7)esu),虚部为1.49×10~(-17)C(4.48×10~(-8)esu),该极化率数值比体硅材料的χ(3)值大5个数量级。对该材料非线性光学产生的机理进行了研究,认为材料体现出的较强的量子限制效应是非线性极化率增强的主要来源。     

Study of magnetotransport properties of interacting quantum dot systems using the ECA method

We study the magnetotransport of the interacting QD system in a magnetic field using the numerical method of embedded-cluster approximation (ECA). The spin-resolved conductances display different magnetic field dependences for different transport regimes. Through comparison of conductance polarization, the mixed-valence regime shows the largest polarization. The spin-resolved conductance as a function of the ratio between the magnetic field and Kondo temperature H/TK is found to exhibit an approximate universal behavior in the Kondo regime. We also investigate conductance dependence on interaction strength and find interesting inversion of sign of polarization in some cases.     

Interband photoconductivity of Ge/Si structures with self-organized quantum rings

At low temperatures a lateral photoconductivity (PC) of Ge/Si (1 0 0) self-organized quantum rings (QRs) structures as a function of interband light intensity has been investigated for different values of lateral voltage and temperature. In contrast to self-organized Ge/Si quantum dots (QDs) structures (grown at the same conditions) where the stepped PC was registered, for QRs structures essential smoothing of PC steps was observed. Such behavior is determined by decreasing of strain potential around QRs in conductive Si matrix due to a transfer of Ge atoms from the center of QDs to its periphery accompanied by Ge/Si intermixing.