Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

微分电位溶出法测定酒中痕量铅

本文研究了测定酒中痕量铅的微分电位溶出法。该法检测下限为0.1ug·L~(-1)pb,在0～10ug·L~(-1)浓度范围内有良好线性关系,用于酒中痕量铅的直接测定,其相对标准偏差小于4.5%,回收率为98.5～103%,结果令人满意。     

Electrochemical reduction of 1,1-dihalo-2,2-disubstituted cyclopropanes

The electrochemical reduction of 1,1-dihalo-2-R-2-methylcyclopropanes was studied by polarography and preparative electrolysis. A mixture of stereoisomeric monoboro- and monochlorocyclopropanes was obtained with preparative yield of 60–70% in preparative electroreduction in methanol against a background of 0.1 M LiClO₄. In the case of bromine derivatives of cyclopropanes (except when R = CN) an effect was found on the part of the current density on the ratio of cis and trans isomers, which was interpreted as a change, in dependence on current density, of the contributions of the reactions of reduction of the starting compounds (S_N2 mechanism) and ionic pairs (S_N1 mechanism). The effect of the solvent (CHCl₃, DMF, DMSO, MeOH) and background salt (LiClO₄, Et₄NBr) on the ratio of stereoisomers is in agreement with this interpretation.A. E. Arbuzov Institute of Organic and Physical Chemistry, Kazan Science Center, Russian Academy of Sciences, Kazan. Translated from Izvestiya Akademii Nauk, Seriya Khimicheskaya, No. 9, pp. 2023–2032, September, 1992.     

像势对量子阱中类氢杂质结合能的影响

在有效质量近似下，利用变分方法研究了像势对量子阱中类氢杂质结合能的影响。计算中考虑到了阱和垒中电子有效质量的不同。数值计算结果表明：阱和垒中质量的不连续只对阱宽较窄的区域有影响，而像势则在整个区域都有影响．对于阱和垒中介电常数之比较大和阱宽较小的量子阱，考虑像势对阱中杂质结合能的修正是非常必要的     

高压下氢化锂晶体中的离子间力与结合能公式的原子分子设计

本文提出一种利用材料Hugoniot数据研究高压下离子晶体中微观离子状态及其离子间排斥作用势的新方法。对氢化锂晶体进行研究时,我们得到Li~+和H~-离子之间排斥作用势函数,结果表明文献〔1〕中提出的离子压缩效应具有客观性。     

CX_2(NO_2)_2(X=H,F,C1)分子旋转势和构型稳定性的ab initio研究

本文用ab initio计算方法,采用STO-3G基组,对二硝基卤代甲烷CH_2(NO_2)_3(1),CF_2(NO_2)_2(2);CCl_2(NO_2)_2(3)等分子作了单点计算,研究其旋转势能.全构型优化研究了五个具有对称性构型的结构和稳定性,并作了理论分析和探讨.     

Effect of distortion in electron impact excitation in Coulomb-projected Born approximation

We have calculated total and differential cross-sections for 1s →ns (n = 2, 3, 4) electron impact excitation of hydrogen and hydrogenic ions at various energies in Coulomb-projected Born approximation. Distortion due to static interactions, target polarization and exchange effects has been incorporated in the initial channel. The present calculations have been compared with other theoretical and experimental results.     

中能区光学势的温度效应

本文在Skyr}e相互作用、核物质近似和自洽半经典方法的基础上，将微观光学势的自洽研究推J“到中能区(60-r300MeV)，研究了”+907r在该能区光学势的径向形状和温度效应     

Theoretical Study of the Molecular Electrostatic Potential of C_(50)

1 INTRODUCTION All fullerenes made so far obey the isolated pentagon (IPR)[1], which governs the stability of fullerenes comprising hexagons and exact 12 pen- tagons. Smaller fullerenes, which violate the IPR, are predicted to have high instability and especially difficult isolation due to their condensed pentagons and increased strain. The production of smaller fullerene C36 has been reported[2]. However, the definite characterization of a C36-based solid is in doubt. Moreover, variou…     

YN相互作用和轻超核∧^5He结合能的计算

在手征SU(3)夸克模型基础上，用共振群方法，给出∧N相互作用的非定域位，并用于轻超核∧^5He的结合能的计算，得到了与实验和其他方法相近的结果．