Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

盲孔法测量复合材料残余应力释放应变矩阵的有限元分析

对盲孔法测量正交各向异性复合材料残余应力释放应变矩阵进行有限元分析.以碳/环氧正交各向异性材料板为基础,对于不同孔深的盲孔进行有限元计算,得出与其相对应的释放应变矩阵,并分析孔深对释放应变矩阵的影响.为实际工程中残余应力的测试奠定了基础.     

逆境生物学研究如何为发展我国旱地农业服务

根据我国半干旱地区农业的特点，提出了该地区农业发展中存在的问题，并给出了解决的途径及建议。     

填埋场淋滤液水位对边坡防渗膜拉应力的影响

上、下界面的不平衡摩擦力将导致填埋场边坡上的土工防渗膜承受拉应力．垃圾填埋体内淋滤液水位的高低将对防渗膜上、下界面摩擦力的大小产生影响，进而影响防渗膜承受的拉应力，文中利用作者推导的一种确定防渗膜拉应力大小的新方法对其进行了计算．对某填埋场实例的计算结果表明，淋滤液水位的存在将改善防渗膜的工作性态．     

复合桩基中承台内区土阻力群桩效应系数的有限元分析

采用有限元方法，对复合桩基中承台内区土阻力群桩效应系数进行了分析，并编制了相应的有限元程序。应用该程序讨论了桩距、桩数、桩长、土类等对承台内区土阻力群桩效应系数的影响。     

A rate-dependent algebraic stress model for turbulence

Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.     

岩石扩容现象与超声横波特征参数相互关系研究评述

介绍了岩石扩容现象与超声皮特征参数相互关系相关专业领域研究的现状及其应用，在用横波速度最大值（Vsmax）来分析岩石微裂纹初始扩展时的应力值（应力门槛值）新方法的基础上，建议利用主动的人工横波震源，应力门槛值、Vsmax后的横波速度值与岩石裂纹加速发展的同步减小特性，更深入地进入地震破裂丛集及前兆特征的研究，有可能建立地震和地质灾害性预报的新方法，并提出利用利用传统方法研究岩石扩容机理，应力门槛值，泊松比等的同时，进行岩石扩容现象，声发射和超声波横波等特性参相互关系研究的新思路。     

板坯结晶器钢水凝固的数值模拟

以实测结晶器铜板温度计算的热流量作边界条件,采用有限元方法,建立了结晶器内凝固传热方程.对凝固传热方程进行了离散化,利用ANSYS商业软件进行求解,得到凝固坯壳的应力、应变情况,从而确定连铸结晶器壁的合理锥度.     

等厚双层涂层材料受集中力作用的平面问题理论解

界面应力的正确评价是分析薄膜涂层材料力学特性的难题之一。利用镜像点法和Dirichlet等值性原理，本文推导了等厚双层薄膜涂层材料受表面集中力作用的平面问题理论解。该显式理论解是以固定在各镜像点上的局部坐标系下的Goursat应力函数的形式给出的。对应于高阶镜像点的应力函数，可通过递推的方法，从对应于低阶镜像点的应力函数求得，而且也易于计算机编程。随着镜像点阶数的增大，它与界面的距离也越来越大，因而相对应的应力函数对界面应力的影响越来越小。最后的算例表明，只需考虑前面有限个镜像点，便可获得足够精度的解。该理论解可作为格林函数，以求解复杂问题的理论解，也可用作边界元法的基本解，提高数值计算的精度和效率。