Performance of SuSi: a method for generating atomistic models of amorphous polymers based on a random search of energy minima

The performance of a recently developed method to generate representative atomistic models of amorphous polymers has been investigated. This method, which is denoted SuSi, can be defined as a random generator of energy minima. The effects produced by different parameters used to define the size of the system and the characteristics of the generation algorithm have been examined. Calculations have been performed on poly(L,D-lactic) acid (rho = 1.25 g/cm3) and nylon 6 (rho = 1.084 g/cm(3)), which are important commercial polymers.     

Polymeric organosilicon systems. XVII. Synthesis and photochemical and conducting properties of poly[o-and m-(disilanylene)phenylene]s

Poly[o-(tetramethyldisilanylene)phenylene] ( 2a ), poly[o-(1,2-dimethyldiphenyldisilanylene)-phenylene] ( 2b ), poly[m-(tetramethyldisilanylene)phenylene] ( 2c ), and poly[m-(1,2-dimethyldiphenyldisilanylene)phenylene] ( 2d ) were prepared by the sodium condensation reaction of the corresponding 1,2-and 1,3-bis (chlorosilyl)benzenes in toluene. Irradiation of thin films of 2a-2d in air resulted in a rapid decrease of absorption maxima in the ultraviolet region. The photolysis of 2b and 2d in benzene afforded photodegradation products with low molecular weights. When thin films of 2b and 2d were doped with antimony pentafluoride vapor, films which have conductivities of semi-conductor level were obtained. © 1993 John Wiley & Sons, Inc.     

戊二酸钛（Ⅲ）与氮化钛的制备

戊二酸钛（Ⅲ）与氮化钛的制备陈吉书，吕真国，徐其亨（曲靖师专化学系曲靖）（曲靖地区环境监测站曲靖）（云南大学化学系昆明６５００９１）关键词戊二酸钛，氮化钛，热分解氮化钛具有硬度大、熔点高、耐磨、耐腐蚀、导电性好、美观（金黄色）等优点，具有重要的工业用...     

Silicon carbide nanotubes and nanotubular fibers: Synthesis, stability, structure, and classification

Published data on silicon carbide nanotubes (SiC-NT) are analyzed. According to theoretical calculations, single-layer SiC-NTs do not dissociate, but they have not yet been detected experimentally. According to the experimental data, metastable SiC-NTs with walls consisting of several layers and nanotube fibers were produced. The optimized structure of single-layer SiC-NTs was calculated by the RHF/6-31G quantum-chemical method. The possibility of obtaining SiC-NTs by gas-phase chemical deposition from methyltrichlorosilane in the temperature range of 800–1000 °C was investigated. Nanofibers and polygrained SiC nanotubes were obtained, but ordinary layer SiC nanotubes were not detected. To remove the inconsistencies it was first proposed to classify the nanotubes according to the structure of their walls, separating all the SiC-NTs into three types: 1) ordinary layer nanotubes with rolled layers, similar to carbon nanotubes; 2) polynanocrystalline nanotubular fibers or nanotubes with walls consisting of linked differently oriented nanograins; 3) monocrystalline synthetic nanotubes with ideal crystalline walls. It was concluded that the ordinary SiC-NTs of the first type are unstable with the exception of one-or two-layer nanotubes; stable SiC-NTs of the first type and SiC-NTs of the third type have not yet been discovered; only nanotubular fibers of the second type were obtained experimentally. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 42, No. 1, pp. 3–13, January–February, 2006.     

ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour

The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl₄ vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4–26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2–20 fold lower than those calculated for the conventional solution sample introduction method.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

光学活性含硅氨基酸的合成

光学纯的硅取代氨基酸是一类非天然的手性氨基酸合成子，在药物，植物保护 剂和精细化学品的合成具有极为广阔的应用前景，其合成方法包括化学不对称合成 及化学合成外消旋体－生物学拆分两种，综述了该方面的研究进展。     

SinH/SinH-(n=3～8)的结构和电子亲合能的研究

选用四种不同的密度泛函理论方法(B3LYP，B3P86，BLYP，BP86)，在全电子的双ξ加极化加弥散函数基组(DZP )下，对SinH／SinH^-(n=3～8)体系进行研究，获得它们的基态结构和电子亲合能。预测Si3H／Si3H^-,Si4H／Si4H^-,Si5H／Si5H^-,Si6H／Si6H^-，Si7H／Si7H^-和Si8H／Si8H^-的基态结构分别为C2v(^2B2)／C2v(1^A1)氢桥结构，Cs(^2A’)／C(^1A’)，C2v(^2B2)／C2v(^1A1)，C2v(^2B2或^2B1)／C4v(^1A1)，C5v(^2A1)／C5v(^1A1)和C5(^2A‘‘)／C3v(^1A1)。在电子亲合能方面，B3LYP方法预测的电子亲合能是最可靠的，预测Si3H，Si4H，Si5H，Si6H，Si7H和Si8H的电子亲合能分别为2．56，2．59，2．84，2．86，3．19和3．14eV。     

钇对Nd-Fe-Al-Ni非晶合金热稳定性与晶化行为的影响

采用差示扫描量热法（DSC）、X射线衍射（XRD）和透射电镜（TEM）研究了Y对Nd-Fe-Al-Ni非晶合金热稳定性和晶化行为的影响。结果表明,淬火态的Nd60Fe20Al10Ni10-xYx（x=0,2）合金基本为非晶组织同时还含有少量的淬态相,Y的加入抑制了淬态相的析出。加入Y后,非晶合金的晶化开始温度和晶化峰值温度都向高温方向移动,证明其热稳定性提高。Y的加入改变了合金的晶化方式和最终晶化产物,使非晶基体中析出的晶化相更加弥散圆整细小。并且Y具有在化学上钝化氧杂质的作用,从而抑制了氧的有害作用。利用Kissinger方程获得了Nd60Fe20Al10Ni8Y2非晶合金的晶化开始和晶化峰值激活能分别为1.21和1.16 eV。