基于改进模糊C均值聚类的弥散张量成像图像分割

为了避免随机选取初始聚类中心点的缺陷,利用最大最小距离的方法确定初始聚类中心点.实验结果表明,和传统的模糊C均值聚类(FCM)算法相比,所提聚类算法具有较高的稳定性和准确性,所分割的胼胝体图像边缘信息更加清晰.     

The optimal path of piston motion for Otto cycle with linear phenomenological heat transfer law

An Otto cycle engine with internal and external irreversibilities of friction and heat leakage, in which the heat transfer between the working fluid and the environment obeys linear phenomenological heat transfer law [q ∝△(T -1)], is studied in this paper. The optimal piston motion trajectory for maximizing the work output per cycle is derived for the fixed total cycle time and fuel consumed per cycle. Optimal control theory is applied to determine the optimal piston trajectories for the cases of with and w...     

Yb3+/Er3+共掺锗碲酸盐玻璃上转换发光增强机理的研究

玻璃的最大声子能量决定稀土离子的上转换发光强度，但本研究发现：Yb^3 ／Er^3 共掺锗碲酸盐玻璃在980nm LD抽运下，上转换荧光强度随着Bi2O3对PbO的取代和碱金属离子半径的增大而明显增强．而Raman光谱显示基质玻璃的最大声子能量并不随Bi2O3对PbO的取代和碱金属离子半径的增大而变化，但玻璃的最大声子密度随着Bi2O3对PbO取代和碱金属离子半径的增大而降低．从玻璃无辐射跃迁概率的角度，通过分析表明，最大声子密度的降低是玻璃上转换发光强度增强的主要原因．     

p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂13 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为175 cm^-1,与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂13 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义. 关键词： 最大模式增益 p型掺杂 InAs/GaAs量子点激光器     

基于二维直方图和模糊熵准则的阈值化方法

图像分割是图像分析、识别和理解的基础。图像分割主要是指将图像分成各具特性的区域并提取出感兴趣目标的技术,其研究多年来一直受到人们的高度重视;阈值化法是图像分割的一种重要方法,在图像处理与识别中广为应用;针对图像分割中细节往往被忽略导致后续处理困难的问题,基于模糊关系和最大模糊熵原理提出了一种阈值化方法,对二维直方图进行模糊分割;为了获得图像分割中的细节,提出的方法根据最大熵原则自动确定模糊区域和门限,进而获得二维模糊熵和遗传算法最优解,最后获得图像细节;通过对不同灰度水平和颜色类型图像进行实验比较,实验结果表明提出的方法优于二维非模糊方法和一维模糊熵分割法,得到该方法在图像分割中获得细节的结论。     

结温对高压白光LED光谱特性的影响

高压LED因其自身突出的特点在照明领域有着潜在的应用优势,但作为一种新型功率LED,其光电热特性仍需深入研究。该实验对6和9V GaN基高压LED芯片进行了相同结构和工艺条件的封装,对封装样品进行了10~70℃的变温度光谱测试,并进行了从控温平台温度到器件结温的转换。为保证器件的电流密度相同,6和9V样品光谱测试的工作电流分别设定为150和100mA。结果显示,结温升高会导致蓝光峰值波长红移、波长半高宽增大、光效下降和显色指数上升等现象。在相同平台温度和注入功率下,9V样品的结温低于6V样品;随着温度的升高,9V样品波长半高宽的增加量比6V样品少1.3nm,光效下降量少1.13lm·W~(-1),显色指数上升量少0.28。以上表明,与低压LED相比,高压LED有着更低的工作结温和更小的温度影响。原因在于,相同环境温度下高压LED具有更好的电流扩展性和更少的发热量。此特性在高压LED的研究、发展与应用等方面具有参考价值。此外,峰值波长仍与结温有着较好的线性度,在光谱设备精度较高的情况下可继续作为结温的敏感参数。     

A Finite Volume Method Preserving Maximum Principle for the Conjugate Heat Transfer Problems with General Interface Conditions

In this paper, we present a unified finite volume method preserving discrete maximum principle (DMP) for the conjugate heat transfer problems with general interface conditions. We prove the existence of the numerical solution and the DMP-preserving property. Numerical experiments show that the nonlinear iteration numbers of the scheme in [24] increase rapidly when the interfacial coefficients decrease to zero. In contrast, the nonlinear iteration numbers of the unified scheme do not increase when the interfacial coefficients decrease to zero, which reveals that the unified scheme is more robust than the scheme in [24]. The accuracy and DMP-preserving property of the scheme are also veried in the numerical experiments.     

广义Kumaraswamy指数分布及其在生存分析中的应用

定义并研究了广义Kum指数分布（GKumE）.给出GKumE分布的分布函数、密度函数以及风险函数,并讨论了其密度函数的展开以及一些数学性质.采用极大似然估计方法对GKumE分布参数进行估计.最后,利用一组实际寿命数据分析了GKumE分布的应用.     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

Estimation of the Reliability of a Stress–Strength System from Poisson Half Logistic Distribution

This paper discussed the estimation of stress-strength reliability parameter R=P(Y<X) based on complete samples when the stress-strength are two independent Poisson half logistic random variables (PHLD). We have addressed the estimation of R in the general case and when the scale parameter is common. The classical and Bayesian estimation (BE) techniques of R are studied. The maximum likelihood estimator (MLE) and its asymptotic distributions are obtained; an approximate asymptotic confidence interval of R is computed using the asymptotic distribution. The non-parametric percentile bootstrap and student’s bootstrap confidence interval of R are discussed. The Bayes estimators of R are computed using a gamma prior and discussed under various loss functions such as the square error loss function (SEL), absolute error loss function (AEL), linear exponential error loss function (LINEX), generalized entropy error loss function (GEL) and maximum a posteriori (MAP). The Metropolis–Hastings algorithm is used to estimate the posterior distributions of the estimators of R. The highest posterior density (HPD) credible interval is constructed based on the SEL. Monte Carlo simulations are used to numerically analyze the performance of the MLE and Bayes estimators, the results were quite satisfactory based on their mean square error (MSE) and confidence interval. Finally, we used two real data studies to demonstrate the performance of the proposed estimation techniques in practice and to illustrate how PHLD is a good candidate in reliability studies.