一阶线性非齐次微分方程求解方法的讨论和一个简化的求解方法

本文证明了一阶线性非齐次微分方程y＇+P(x)·y=f(x)三个求解方法:参数变易法、积分公式、积分因子法之间的等同关系.从参数变易法中引出一个简化的积分公式.事实上此公式恰是对用参数变易法解高阶线性非齐次微分方程时对n=1的拓广.最后以实例验证此公式的简易.     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

A Characterization of Graphs without Even Factors

In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC     

接触载荷作用下的表面裂纹分析

用边界积分方法分析了表面裂纹在接触载荷作用下的张开位移和应力强度因子，该方法将埋在无穷大弹性介质中裂纹模拟为连续分布的位错环，根据两个位错环之间的相互作用能可以得到弹性体的应变能，对弹性体的势能取极值，可以得到关于裂纹张开位移的边界积分方程，通过把半空间的边界模拟成一个包含在无穷大弹性介质中大裂纹，该方法能用已有的边界积分方法很好的处理具有任意表面形状的表面裂纹，文中算例分析了不同倾角的表面裂纹在法向和切向接触载荷作用下，裂纹尖端的应力强度因子，其结果对于分析路面表面裂纹的扩展具有重要意义。     

调控体育课运动负荷的探讨

运动负荷是身体练习给人体带来的生理负担．体育课运动负荷的调控即通过各种有效手段，对一节体育课生理负荷的调节与控制过程．体育课运动负荷的调控应通过练习与讲解、练习与示范、练习与纠正错误、练习与变换练习等四种互动途径进行．     

某库岸滑坡稳定分析及治理措施研究

从地质条件出发,详细分析了滑坡的成因,以大型的岩土工程数值分析软件(ADINA)为研究手段,建立有限元计算模型,用强度折减的方法分析了滑坡体在初始工况、蓄水工况、暴雨工况、水位骤降工况和地震工况下的稳定情况,根据滑坡的失稳情况,在综合考虑的基础上,提出了削坡减载和地表排水相结合的治理措施,计算结果表明,治理措施是可行的,研究结果对设计和施工具有较大的参考价值.     

Does the beam width affect the generalized M factor of hard-edged diffracted beams?

A detailed study of the generalized M² factor of hard-edged diffracted beams based on the truncated second-order moments method, asymptotic analysis and self-convergent beam width approach is performed. The dependence of the generalized M² factor on the parameters characterizing the spatial profile, and beam truncation, etc. is analyzed.     

Randomization helps to perform independent tasks reliably

This paper is about algorithms that schedule tasks to be performed in a distributed failure‐prone environment, when processors communicate by message‐passing, and when tasks are independent and of unit length. The processors work under synchrony and may fail by crashing. Failure patterns are imposed by adversaries. Linearly‐bounded adversaries may fail up to a constant fraction of the processors. Weakly‐adaptive adversaries have to select, prior to the start of an execution, a subset of processors to be failure‐prone, and then may fail only the selected processors, at arbitrary steps, in the course of the execution. Strongly adaptive adversaries have a total number of failures as the only restriction on failure patterns. The measures of complexity are work, measured as the available processor steps, and communication, measured as the number of point‐to‐point messages. A randomized algorithm is developed, that attains both ??(n log*n) expected work and ??(n log*n) expected communication, against weakly‐adaptive linearly‐bounded adversaries, in the case when the numbers of tasks and processors are both equal to n. This is in contrast with performance of algorithms against strongly‐adaptive linearly‐bounded adversaries, which has to be Ω(n log n/log log n) in terms of work. © 2003 Wiley Periodicals, Inc. Random Struct. Alg., 2004     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.