Strain engineering of topological properties in lead‐salt semiconductors

Rock‐salt chalcogenide SnTe represents the simplest realization of a topological insulator where a crystal symmetry allows for the appearance of surface metallic states. Here, we theoretically predict that strain, as realized in thin films grown on (001) substrates, may induce a transition to a topological crystalline insulating phase in related lead‐salt chalcogenides. Furthermore, relevant topological properties of the surface states, such as the location of the Dirac cones on the surface Brillouin zone or the decay length of edge states, appear to be tunable with strain, with potential implications for technological devices benefiting from those additional degrees of freedom. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Topological insulators from a chemist's perspective

Heavy stuff: Topological insulators are formed of heavy atoms and host special surface or edge states. The electronic structure is characterized by a Dirac cone within a bulk band gap (see picture) that is generated by strong spin-orbit coupling. A chemist's perspective in terms of bonds, bands, symmetry, and nuclear charge is provided.     

Gigantic stimulated Raman scattering in one-dimensional Mott-Hubbard insulators: A possible THz source

One-dimensional Mott-Hubbard insulators like Sr₂CuO₃, halogen-bridged Nickel chain compounds have orders-of-magnitude nonlinear optical properties compared to other one-dimensional organic or inorganic compounds. We show theoretically, that the stimulated Raman scattering susceptibility for such insulators could be order(s)-of-magnitude larger even compared to other nonlinear optical susceptibilities. The lowest two-photon state is at lower energy than the lowest one-photon state in some of these insulators. This leads to a potential for strong Stokes generation in the THz regime from these compounds. Our results and conclusions are based on exact numerical solution of finite size two-band extended Hubbard model.     

Empty f-states, Kondo insulators—or what?

Empty f-states several eV above the Fermi level may be of no interest, but they can be populated by optical means. However, when they are within thermal energy of the Fermi level, they can be populated at elevated temperatures and thus permit valence changes. We are investigating with various types of measurements, such as optical reflectivity, magneto-optics, photoemission, inverse photoemission, magnetic susceptibility, electrical resistivity and more such materials as LaS, LaSe, LaTe, CeO₂, CeF₄, YbN, TmS, Ce₃Bi₄Pt₃, Ce₃Sb₄Pt₃, and U₃Sb₄Pt₃. Some of these materials are superconductors, insulators, semimetals, metals, Kondo insulators or semiconductors.     

Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.     

Effects of a finite screening length on the absorption of electromagnetic waves

When an electromagnetic wave impinges on a semiconductor or ionic conductor having a sizeable screening length, it induces diffusion currents in addition to the ohmic currents, which affects the propagation in heterostructures or composite media involving such materials. In the simple geometries and in the low frequency regime studied here, the absorption may be either enhanced or reduced, depending on the parameters, and effects precluded for metals are predicted: extinction of the reflection by a plane wall, complete absorption of an electric multipolar wave by a sphere, disappearance of the scattering by a small sphere, vanishing of both reflection and transmission coefficients for a slab. If the screening length is larger than the skin depth, a slab with intermediate thickness may have a large transparency, and a thick piece of material is expected to be cooled down by the wave near the interface and overheated deeper inside. Received: 29 July 1997 / Revised: 24 November 1997 / Accepted: 20 February 1998     

A new topological insulator built from quasi one‐dimensional atomic ribbons

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one‐dimensional, conducting atomic chains instead of the layered, two‐dimensional sheets known from the established Bi₂(Se,Te)₃ system. The Sb‐doped Bi₂Se₃ nanowires are grown in a TiO₂‐catalyzed process by chemical vapor deposition. The binary Bi₂Se₃ is transformed from rhombohedral to orthorhombic by substituting Sb on ～38% of the Bi sites. Pure Sb₂Se₃ is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle‐resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Magnetic proximity effect in the topological insulator BiSbTeSe2

Magnetic proximity effects can lead to novel phenomena in the transport properties of topological insulators. In this study, we demonstrate a characteristic fourfold symmetry in the angular dependence of magnetoresistance in the topological insulator BiSbTeSe₂ exfoliated onto magnetic insulator yttrium iron garnet substrates. The observed symmetry is seen to arise when the external magnetic field is in‐plane to the current direction and gets enhanced at large field magnitudes. Increasing the temperature and current density diminishes the fourfold symmetry. The symmetry seems to be a signature of the proximity effect from the underlying magnetic substrate on BiSbTeSe₂. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Pressure effects in ferromagnetic manganites and carrier scattering by disordered magnetic rare earths

The influence of hydrostatic pressure on the transport properties of (La_1-xR_x)_0.67Ca_0.33MnO₃ (,Tb) ferromagnetic manganites is investigated. The enhancement of the Curie temperature T_C under pressure agrees with previous data. In the paramagnetic range, the resistivity can be represented by a Mott localisation law, with a characteristic temperature T₀ decreasing with pressure. The variation of T_C with pressure is compared to the effect induced by replacing La by a magnetic rare earth in (La_1-xR_x)_0.67Sr_0.33MnO₃ manganites (, ..., Tm). The main effect is not related to the decrease of the mean radius of the cation, but to an additional scattering by the magnetic moment of the rare earth. Received: 15 May 1998 / Revised: 6 July 1998 / Accepted: 16 July 1998